The authors have reported their recent progress in the research field of ZnO materials as well as the corresponding global advance. Recent results regarding（1） the development of high-quality epitaxy techniques,（2...The authors have reported their recent progress in the research field of ZnO materials as well as the corresponding global advance. Recent results regarding（1） the development of high-quality epitaxy techniques,（2） the defect physics and the Te/N co-doping mechanism for p-type conduction, and（3） the design, realization,and properties of the ZnMgO/ZnO hetero-structures have been shown and discussed. A complete technology of the growth of high-quality ZnO epi-films and nano-crystals has been developed. The co-doping of N plus an isovalent element to oxygen has been found to be the most hopeful path to overcome the notorious p-type hurdle. High mobility electrons have been observed in low-dimensional structures utilizing the polarization of ZnMgO and ZnO.Very different properties as well as new physics of the electrons in 2DEG and 3DES have been found as compared to the electrons in the bulk.展开更多
This paper reports that longitudinally oriented CoCrPt thin films with Crs5W15 underlayer and CoCr intermediate layer for use of giant magnetoresistance heads were fabricated by magnetron sputtering. Without CoCr inte...This paper reports that longitudinally oriented CoCrPt thin films with Crs5W15 underlayer and CoCr intermediate layer for use of giant magnetoresistance heads were fabricated by magnetron sputtering. Without CoCr intermediate layer, CoCrPt layer deposited directly on Crs5W15 underlayer which has a dominant （200） texture exhibits unexpected （101l） texture. After introducing CoCr intermediate layer, the CoCrPt layer shifts into （1120） texture. This article studies the crystallographic hetero-epitaxy relationship between magnetic layer and underlayer in order to understand the appearance of CoCrPt （1011） texture on （200） textured Cr underlayer and the influence of CoCr intermediate layer on the inducement of CoCrPt （1120） texture. The CoCr intermediate layer plays a crucial role in controlling the microstructure and consequently the magnetic properties of the overlying magnetic layer.展开更多
A promising technology named epitaxy on nano-scale freestanding fin （ENFF） is firstly proposed for hetero- epitaxy. This technology can effectively release total strain energy and then can reduce the probability of ...A promising technology named epitaxy on nano-scale freestanding fin （ENFF） is firstly proposed for hetero- epitaxy. This technology can effectively release total strain energy and then can reduce the probability of gener- ating mismatch dislocations. Based on the calculation, dislocation defects can be eliminated completely when the thickness of the Si freestanding fin is less than 10nm for the epitaxial Ge layer. In addition, this proposed ENFF process can provide sufficient uniaxial stress for the epitaxy layer, which can be the major stressor for the SiGe or Ge channel fin field-effect transistor or nanowire at the 10nm node and beyond. According to the results of technology computer-aided design simulation, nanowires integrated with ENFF show excellent electrical perfor- mance for uniaxial stress and band offset. The ENFF process is compatible with the state of the art mainstream technology, which has a good potential for future applications.展开更多
基金Project supported by the National Natural Science Foundation of China(Nos.61025020,61274058,61322403,61504057,61574075)the Natural Science Foundation of Jiangsu Province(Nos.BK2011437,BK20130013,BK20150585)+1 种基金the Priority Academic Program Development of Jiangsu Higher Education Institutionsthe Fundamental Research Funds for the Central Universities
文摘The authors have reported their recent progress in the research field of ZnO materials as well as the corresponding global advance. Recent results regarding（1） the development of high-quality epitaxy techniques,（2） the defect physics and the Te/N co-doping mechanism for p-type conduction, and（3） the design, realization,and properties of the ZnMgO/ZnO hetero-structures have been shown and discussed. A complete technology of the growth of high-quality ZnO epi-films and nano-crystals has been developed. The co-doping of N plus an isovalent element to oxygen has been found to be the most hopeful path to overcome the notorious p-type hurdle. High mobility electrons have been observed in low-dimensional structures utilizing the polarization of ZnMgO and ZnO.Very different properties as well as new physics of the electrons in 2DEG and 3DES have been found as compared to the electrons in the bulk.
基金Project supported by the National Natural Science Foundation of China (Grant No 10174028)
文摘This paper reports that longitudinally oriented CoCrPt thin films with Crs5W15 underlayer and CoCr intermediate layer for use of giant magnetoresistance heads were fabricated by magnetron sputtering. Without CoCr intermediate layer, CoCrPt layer deposited directly on Crs5W15 underlayer which has a dominant （200） texture exhibits unexpected （101l） texture. After introducing CoCr intermediate layer, the CoCrPt layer shifts into （1120） texture. This article studies the crystallographic hetero-epitaxy relationship between magnetic layer and underlayer in order to understand the appearance of CoCrPt （1011） texture on （200） textured Cr underlayer and the influence of CoCr intermediate layer on the inducement of CoCrPt （1120） texture. The CoCr intermediate layer plays a crucial role in controlling the microstructure and consequently the magnetic properties of the overlying magnetic layer.
基金Supported by the National Key Research and Development Program of China(2016YFA0301701)the Youth Innovation Promotion Association of CAS under Grant No 2016112
文摘A promising technology named epitaxy on nano-scale freestanding fin （ENFF） is firstly proposed for hetero- epitaxy. This technology can effectively release total strain energy and then can reduce the probability of gener- ating mismatch dislocations. Based on the calculation, dislocation defects can be eliminated completely when the thickness of the Si freestanding fin is less than 10nm for the epitaxial Ge layer. In addition, this proposed ENFF process can provide sufficient uniaxial stress for the epitaxy layer, which can be the major stressor for the SiGe or Ge channel fin field-effect transistor or nanowire at the 10nm node and beyond. According to the results of technology computer-aided design simulation, nanowires integrated with ENFF show excellent electrical perfor- mance for uniaxial stress and band offset. The ENFF process is compatible with the state of the art mainstream technology, which has a good potential for future applications.
