摘要
3C-SiC薄膜的外延生长一直是SiC材料制备领域的一个热点,单晶Si衬底异质外延3C-SiC是实现大尺寸、低成本薄膜的有效方法,备受人们关注。单晶Si与3C-SiC之间存在较大的晶格失配(20%)和热膨胀系数差异(8%),严重制约着高质量单晶薄膜的制备。本文对单晶Si衬底异质外延3C-SiC薄膜的基本原理和工艺过程进行了总结,着重介绍了薄膜生长中的缺陷和可控掺杂方面的研究进展以及面临的挑战,并对今后的研究热点做了归纳展望。
The epitaxial growth of 3C-SiC epilayer has been focused on for a long time in the SiC research fields.Hetero-epitaxial growth of 3C-SiC on silicon substrate is one of the potential approaches to realize large-size and low-cost 3C-SiC epilayers.It has been attracting a great deal of attention in the past few decades.However,it is still a challenge to obtain high quality 3C-SiC epitaxial layers due to the large lattice constant mismatch（20%） and the thermal expansion coefficient mismatch（8%） between silicon and 3C-SiC.In this paper,we review the basic process of hetero-epitaxial growth of 3C-SiC on silicon substrate and the recent progress in defects and controllable doping.The future research hot-spots are summarized.
出处
《硅酸盐通报》
CAS
CSCD
北大核心
2011年第5期1083-1088,共6页
Bulletin of the Chinese Ceramic Society
基金
中国科学院知识创新工程重要方向性项目(KGCX2-YW-206)
上海市科委项目(No.09DZ1141400
No.09520714900)
