In two-dimensional （2D） time-spreading/wavelength-hopping optical code division multiple access （OCDMA） systems, employing less coherent broadband optical pulse sources allows lower electrical operating rate and b...In two-dimensional （2D） time-spreading/wavelength-hopping optical code division multiple access （OCDMA） systems, employing less coherent broadband optical pulse sources allows lower electrical operating rate and better system performance. An optical gate based scheme for generating weakly coherent （approximately incoherent） broadband optical pulses was proposed and experimentally demonstrated. In this scheme, the terahertz optical asymmetric demultiplexer, together with a coherent narrowband control pulse source, turns an incoherent broadband continuous-wave （CW） light source into the required pulse source.展开更多
A high-permittivity （high-k） material is applied as the gate dielectric layer in a silicon metal-oxide- semiconductor （MOS） capacitor to form a special electro-optic （EO） modulator. Both induced charge density a...A high-permittivity （high-k） material is applied as the gate dielectric layer in a silicon metal-oxide- semiconductor （MOS） capacitor to form a special electro-optic （EO） modulator. Both induced charge density and modulation efficiency in the proposed modulator are improved due to the special structure design and the application of the high-k material. The device has an ultra-compact dimension of 691 μm in length.展开更多
文摘In two-dimensional （2D） time-spreading/wavelength-hopping optical code division multiple access （OCDMA） systems, employing less coherent broadband optical pulse sources allows lower electrical operating rate and better system performance. An optical gate based scheme for generating weakly coherent （approximately incoherent） broadband optical pulses was proposed and experimentally demonstrated. In this scheme, the terahertz optical asymmetric demultiplexer, together with a coherent narrowband control pulse source, turns an incoherent broadband continuous-wave （CW） light source into the required pulse source.
文摘A high-permittivity （high-k） material is applied as the gate dielectric layer in a silicon metal-oxide- semiconductor （MOS） capacitor to form a special electro-optic （EO） modulator. Both induced charge density and modulation efficiency in the proposed modulator are improved due to the special structure design and the application of the high-k material. The device has an ultra-compact dimension of 691 μm in length.
