摘要
在恒流应力条件下,用时间相关介质击穿(TDDB)特性,研究了Ar-O_2热生长SiO_2的时间相关击穿的电荷性质。研究结果表明:(1)相关击穿电荷(Q_(BD))不是常数,而是与氧化层电场强度(E_(OX))有关;(2)阳极相关击穿电场(E_(BD))近似为常数;(3)电场加速因子( β)不是常数,它亦不是与E_(OX)^(-2)成正比,而是呈更为复杂的电场依赖关系。
Charge to breakdown of Ar-O_2 thermal grown SiO_2 was investigated by time dependentdielectric breakdown (TDDB) characteristics under constant current stresses. The resultsshow (1) charge to breakdown, Q_(BD), cannot be constant but is dependent on the oxide electricfield, E_(OX).(2) anode field to breakdown, E_(BD), is approximately a constant. (3) electric fieldacceleration factor, β,is neither a constant nor proportional to 1/E_(OX)~2, It's a more complex dependenceon the electric field.
关键词
二氧化硅
介质击穿
电荷
Electric properties
Films
Gates (transistor)
Silica
