A high efficiency class-1 linear audio power amplifier （PA） with an adaptive supply is presented. Its efficiency is improved by a dynamic supply to reduce the power transistors＇ voltage drop. A gain compression tec...A high efficiency class-1 linear audio power amplifier （PA） with an adaptive supply is presented. Its efficiency is improved by a dynamic supply to reduce the power transistors＇ voltage drop. A gain compression technique is adopted to make the amplifier accommodate a single positive supply. Circuit complicity and chip area are reduced because no charge pump is necessary for the negative supply. A common shared mode voltage and a symmetric layout pattern are used to minimize the non-linearity. A peak efficiency of 80% is reached at peak output power. The measured THD＋N before and after the supply switching point are 0.01% and 0.05%, respectively. The maximum output power is 410 mW for an 8 f2 speaker load. Unlike switching amplifiers, the class-I amplifier operates as a linear amplifier and hence has a low EMI. The advantage of a high efficiency and low EMI makes the class-1 amplifier suitable for portable and RF sensitive applications.展开更多
Based on a self-developed A1GaN/GaN HEMT with 2.5 mm gate width technology on a SiC substrate, an X-band GaN combined solid-state power amplifier module is fabricated. The module consists of an AIGaN/GaN HEMT, Wilkins...Based on a self-developed A1GaN/GaN HEMT with 2.5 mm gate width technology on a SiC substrate, an X-band GaN combined solid-state power amplifier module is fabricated. The module consists of an AIGaN/GaN HEMT, Wilkinson power couplers, DC-bias circuit and microstrip line. For each amplifier, we use a bipolar DC power source. Special RC networks at the input and output and a resistor between the DC power source and the gate of the transistor at the input are used for cancellation of self-oscillation and crosstalk of low-frequency of each amplifier. At the same time, branches of length 3λ/4 for Wilkinson power couplers are designed for the elimination of self-oscillation of the two amplifiers. Microstrip stub lines are used for input matching and output matching. Under Vds = 27 V, Vgs = -4.0 V, CW operating conditions at 8 GHz, the amplifier module exhibits a line gain of 5.6 dB with power added efficiency of 23.4%, and output power of 41.46 dBm （14 W）, and the power gain compression is 3 dB. Between 8 and 8.5 GHz, the variation of output power is less than 1.5 dB.展开更多
基金supported by the Analog Devices and ASIC Laboratory,China
文摘A high efficiency class-1 linear audio power amplifier （PA） with an adaptive supply is presented. Its efficiency is improved by a dynamic supply to reduce the power transistors＇ voltage drop. A gain compression technique is adopted to make the amplifier accommodate a single positive supply. Circuit complicity and chip area are reduced because no charge pump is necessary for the negative supply. A common shared mode voltage and a symmetric layout pattern are used to minimize the non-linearity. A peak efficiency of 80% is reached at peak output power. The measured THD＋N before and after the supply switching point are 0.01% and 0.05%, respectively. The maximum output power is 410 mW for an 8 f2 speaker load. Unlike switching amplifiers, the class-I amplifier operates as a linear amplifier and hence has a low EMI. The advantage of a high efficiency and low EMI makes the class-1 amplifier suitable for portable and RF sensitive applications.
基金Project supported by the National Natural Science Foundation of China (Nos.60736033,60676048)
文摘Based on a self-developed A1GaN/GaN HEMT with 2.5 mm gate width technology on a SiC substrate, an X-band GaN combined solid-state power amplifier module is fabricated. The module consists of an AIGaN/GaN HEMT, Wilkinson power couplers, DC-bias circuit and microstrip line. For each amplifier, we use a bipolar DC power source. Special RC networks at the input and output and a resistor between the DC power source and the gate of the transistor at the input are used for cancellation of self-oscillation and crosstalk of low-frequency of each amplifier. At the same time, branches of length 3λ/4 for Wilkinson power couplers are designed for the elimination of self-oscillation of the two amplifiers. Microstrip stub lines are used for input matching and output matching. Under Vds = 27 V, Vgs = -4.0 V, CW operating conditions at 8 GHz, the amplifier module exhibits a line gain of 5.6 dB with power added efficiency of 23.4%, and output power of 41.46 dBm （14 W）, and the power gain compression is 3 dB. Between 8 and 8.5 GHz, the variation of output power is less than 1.5 dB.
文摘本文提出了基于半导体光放大器(SOA)中的瞬态交叉相位调制(T-XPM)效应与交叉增益压缩(XGC)效应的全光2R再生方法,同时研究了SOA中的T-XPM效应获得反逻辑码信号以及XGC效应光开关门的特性,实现了100 Gb/s归零码信号的2R再生,接收机灵敏度提高了1.7—2 d B;对该方案中的反逻辑码对于再生效果的影响进行了量化研究,并在C波段范围内研究了该再生方案的再生效果,实现了覆盖1535—1555 nm的全光2R再生.
