GaAs-based nanowire(NW)lasers working in the infrared region is critical in integrated optoelectronics.In the past few decades,the field of NW lasers has developed rapidly.Compared with materials working in the ultrav...GaAs-based nanowire(NW)lasers working in the infrared region is critical in integrated optoelectronics.In the past few decades,the field of NW lasers has developed rapidly.Compared with materials working in the ultraviolet and visible ranges,GaAs-based infrared NW lasers,however,are more difficult to achieve because of their specific properties.In this review,we focus on the recent developments of GaAs-based NWs,more especially,the optical property and lasing of GaAs-based NWs.The growth mechanism of GaAs NWs is introduced in detail,including the crystal phase control and the growth of complex structures.Subsequently,the influence and improvement of the optical properties of GaAsbased NWs are introduced and discussed.Finally,the design and latest progress of GaAs-based NW lasers are put forward.展开更多
This paper applies a novel quad-layer resist and e-beam lithography technique to fabricate a GaAs-based InAlAs/InGaAs metamorphic high electron mobility transistor （HEMT） grown by metal organic chemical vapour depos...This paper applies a novel quad-layer resist and e-beam lithography technique to fabricate a GaAs-based InAlAs/InGaAs metamorphic high electron mobility transistor （HEMT） grown by metal organic chemical vapour deposition （MOCVD）. The gate length of the metamorphic HEMT was 150 nm, the maximum current density was 330 mA/mm, the maximum transconductanee was 470 mS/mm, the threshold voltage was -0.6 V, and the maximum current gain cut-off frequency and maximum oscillation frequency were 102 GHz and 450 GHz, respectively. This is the first report on tri-termination devices whose frequency value is above 400 GHz in China. The excellent frequency performances promise the possibility of metamorphic HEMTs grown by MOCVD for millimetre-wave applications, and more outstanding device performances would be obtained after optimizing the material structure, the elaborate T-gate and other device processes further.展开更多
The fabrication of ridge waveguide of 808 nm GaAs-based laser diodes by wet chemical etching is investigated. The etching behavior of GaAs, InGaP and A1GalnP in various solutions is evaluated. As a result, the etching...The fabrication of ridge waveguide of 808 nm GaAs-based laser diodes by wet chemical etching is investigated. The etching behavior of GaAs, InGaP and A1GalnP in various solutions is evaluated. As a result, the etching solutions simultaneously corroding InGaP and A1GalnP layers are searched successfully. Effects of etching time and the concentration of mixtures on etching depth and the geometrical shape of ridge are analyzed. It is found that under proper conditions, appropriate etching depth and smooth surfaces can be obtained and the steep degree of pattern can be accepted, especially for wide ridge waveguide laser diodes.展开更多
To describe the dynamic response characteristics of the laminated graded-bandgap GaAs-based photocathode with distributed Bragg reflection structure,a general theoretical temporal response model is deduced by combinin...To describe the dynamic response characteristics of the laminated graded-bandgap GaAs-based photocathode with distributed Bragg reflection structure,a general theoretical temporal response model is deduced by combining the unsteady continuity equation and numerical calculation method.Through the model,the contribution of the distribution Bragg reflec-tion structure and graded-bandgap emission layer to the temporal response are investigated.Meanwhile,the relationships between the temporal response characteristics of the laminated GaAs-based photocathode and different structural parame-ters are also analyzed,including average electron decay time,emission layer thickness,and incident light wavelength.It is found that the introduction of distribution Bragg reflection(DBR)layer solves the discrepancy between the absorption capability of the emission layer and the temporal response.Moreover,the distributed Bragg reflection layer can improve the time response by optimizing the initial photoelectron distribution.The improvement effect of the DBR layer on the temporal response is enhanced with the emission layer thickness decreasing or the incident light wavelength increasing.These results explain the effect of the DBR layer of the photocathode on the dynamic characteristics,which can offer a new insight into the dynamic research of GaAs-based photocathode.展开更多
基金supported by the National Natural Science Foundation of China(61574022,61674021,61704011,61904017,111674038,1404219,and 11574130)the Foundation of NANO X(No.18JG01)the funding support from Shenzhen Science and Technology Innovation Commission(JCYJ20180305180553701,KQJSCX20170726145748,and KQTD2015071710313656)。
文摘GaAs-based nanowire(NW)lasers working in the infrared region is critical in integrated optoelectronics.In the past few decades,the field of NW lasers has developed rapidly.Compared with materials working in the ultraviolet and visible ranges,GaAs-based infrared NW lasers,however,are more difficult to achieve because of their specific properties.In this review,we focus on the recent developments of GaAs-based NWs,more especially,the optical property and lasing of GaAs-based NWs.The growth mechanism of GaAs NWs is introduced in detail,including the crystal phase control and the growth of complex structures.Subsequently,the influence and improvement of the optical properties of GaAsbased NWs are introduced and discussed.Finally,the design and latest progress of GaAs-based NW lasers are put forward.
基金Project supported by the State Key Development Program for Basic Research of China (Grant No. G2002CB311901)Institute of Microelectronics,Chinese Academy of Sciences,Dean Fund (Grant No. 06SB124004)
文摘This paper applies a novel quad-layer resist and e-beam lithography technique to fabricate a GaAs-based InAlAs/InGaAs metamorphic high electron mobility transistor （HEMT） grown by metal organic chemical vapour deposition （MOCVD）. The gate length of the metamorphic HEMT was 150 nm, the maximum current density was 330 mA/mm, the maximum transconductanee was 470 mS/mm, the threshold voltage was -0.6 V, and the maximum current gain cut-off frequency and maximum oscillation frequency were 102 GHz and 450 GHz, respectively. This is the first report on tri-termination devices whose frequency value is above 400 GHz in China. The excellent frequency performances promise the possibility of metamorphic HEMTs grown by MOCVD for millimetre-wave applications, and more outstanding device performances would be obtained after optimizing the material structure, the elaborate T-gate and other device processes further.
基金Project supported by the National Natural Science Foundation of China(Nos.61474110,61377020,61376089,61223005,61176126)the National Science Fund for Distinguished Young Scholars(No.60925017)
文摘The fabrication of ridge waveguide of 808 nm GaAs-based laser diodes by wet chemical etching is investigated. The etching behavior of GaAs, InGaP and A1GalnP in various solutions is evaluated. As a result, the etching solutions simultaneously corroding InGaP and A1GalnP layers are searched successfully. Effects of etching time and the concentration of mixtures on etching depth and the geometrical shape of ridge are analyzed. It is found that under proper conditions, appropriate etching depth and smooth surfaces can be obtained and the steep degree of pattern can be accepted, especially for wide ridge waveguide laser diodes.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.U2141239 and 61771245)the Fund from the Science and Technology on Low-Light-Level Night Vision Laboratory of China(Grant No.J20200102).
文摘To describe the dynamic response characteristics of the laminated graded-bandgap GaAs-based photocathode with distributed Bragg reflection structure,a general theoretical temporal response model is deduced by combining the unsteady continuity equation and numerical calculation method.Through the model,the contribution of the distribution Bragg reflec-tion structure and graded-bandgap emission layer to the temporal response are investigated.Meanwhile,the relationships between the temporal response characteristics of the laminated GaAs-based photocathode and different structural parame-ters are also analyzed,including average electron decay time,emission layer thickness,and incident light wavelength.It is found that the introduction of distribution Bragg reflection(DBR)layer solves the discrepancy between the absorption capability of the emission layer and the temporal response.Moreover,the distributed Bragg reflection layer can improve the time response by optimizing the initial photoelectron distribution.The improvement effect of the DBR layer on the temporal response is enhanced with the emission layer thickness decreasing or the incident light wavelength increasing.These results explain the effect of the DBR layer of the photocathode on the dynamic characteristics,which can offer a new insight into the dynamic research of GaAs-based photocathode.
