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可应用于四结砷化镓太阳电池的ZnS/MgF_2/SiO_2减反射膜的结构设计 被引量:1

Simulation on ZnS/MgF_2/SiO_2 Antireflection Coating for Four-junction GaAs Solar Cell
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摘要 在采用磁控溅射方法分别制备单层ZnS、MgF_2、SiO_2薄膜及表征其折射率基础上,以折射率逐渐减小的三层结构(HML结构)思想,采用TFC光学薄膜软件,设计并模拟了可用于四结砷化镓(GaInP/GaAs/GaInAs/GaInAs)太阳电池的三层ZnS/MgF_2/SiO_2减反射膜系.并分析模拟了窗口层厚度、各膜层厚度和折射率以及光入射角对有效反射率的影响.结果表明:窗口层厚度、SiO_2的折射率和ZnS膜层厚度对有效反射率R_e的影响最为显著;在350~1 800nm宽波段,当窗口层厚度为83nm,膜系厚度分别为57nm、37nm和88nm,且光入射角为0°时,有效反射率Re最小可达3.38%. Based on preparation of ZnS,MgF2 and SiO2 single-layer film by sputtering and their characterization of refractive index,a ZnS/MgF2/SiO2 three-layers anti-reflection coatings was put forward on the principle of refractive index decreasing progressively(HML structure),and simulated by TFC thin film software,which was expected to apply to GaInP/GaAs/GaInAs/GaInAs solar cell.Considering the following factors,such as thickness window layer,thickness and refractive index of ZnS,MgF2 and SiO2 film,incident angle,the varieties of effective reflectivity were investigated.The simulated results showed that,the thickness of window layer AlInP and ZnS,the refractive index of nano-SiO2 could be impact seriously on effective reflectivity Re;and within the scope of 350~1 800 nm,a minimum value 3.38% of Re could be obtained,when the light incident angle was0°,the thicknesses of AlInP,ZnS,MgF2,SiO2 were 83 nm,57 nm,37 nm,88 nm respectively.
作者 盛钰清 涂洁磊 郭腾腾 章威 张流柱 宋冠宇 徐晓壮 颜平远 SHENG Yu-qing;TU Jie-lei;GUO Teng-teng;ZHANG Wei;ZHANG Liu-zhu;SONG Guan-yu;XU Xiao-zhuang;YAN Ping-yuan(Yunnan Provincial Key Laboratory of Rural Energy Engineering, Yunnan Normal University, Kunming 650500,Chin)
出处 《云南师范大学学报(自然科学版)》 2018年第2期6-10,共5页 Journal of Yunnan Normal University:Natural Sciences Edition
基金 国家自然科学基金资助项目(61664010)
关键词 四结砷化镓太阳电池 三层减反射膜 宽光谱 TFC光学薄膜软件 GaAs-based four-junction solar cells Three layers anti-reflection coatings Broadband spectrum TFC thin film software
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