The polymerization of fused-ring acceptors(FRAs) to afford their corresponding polymeric acceptors for high-performance all-polymer solar cells(all-PSCs) has achieved remarkable progress in the past few years.However,...The polymerization of fused-ring acceptors(FRAs) to afford their corresponding polymeric acceptors for high-performance all-polymer solar cells(all-PSCs) has achieved remarkable progress in the past few years.However,due to the high degree of synthetic complexity for the monomer,the high-cost of these polymeric acceptors may limit their commercial applications.Thus,it is urgent to develop inexpensive and high-performance polymeric acceptors for all-PSCs.Herein,two novel polymeric acceptors(PBTzO and PBTzO-2F) have been designed and synthesized by copolymerization of noncovalently fused ring acceptors(NFRAs),which were employed in all-PSCs for the first time.Upon introducing the “noncovalently conformational locks(NoCLs)” in the backbone and selective fluorination of the end-group,photophysical and electrical properties,and solidstate packing properties of the NFRAs have been rationally tuned.As a result,the PBDB-T:PBTzO-2F based devices presented an excellent power conversion efficiency(PCE) of 11.04%,much higher than that of PBTzO based ones due to the increased charge generation and extraction,improved hole transfer and carrier mobilities,and reduced energy loss.More importantly,PBTzO-2F exhibited a much lower synthetic complexity(SC) index and higher figure-of-merit(FOM) values than the high-performance fused-ring acceptor based polymer acceptors(FRA-PAs) due to the simpler structures and more effective synthesis.This contribution provided a novel idea to achieve low-cost and high-performance all-PSCs.展开更多
An 8-b 100-MS/s pipelined analog-to-digital converter（ADC） is presented.Without the dedicated sample-and -hold amplifier（SHA）,it achieves figure-of-merit and area 21%and 12%less than the conventional ADC with the ...An 8-b 100-MS/s pipelined analog-to-digital converter（ADC） is presented.Without the dedicated sample-and -hold amplifier（SHA）,it achieves figure-of-merit and area 21%and 12%less than the conventional ADC with the dedicated SHA,respectively.The closed-loop bandwidth of op amps in multiplying DAC is modeled,providing guidelines for power optimization.The theory is well supported by transistor level simulations.A 0.18-μm 1P6M CMOS process was used to integrate the ADCs,and the measured results show that the effective number of bits is 7.43 bit and 6.94 bit for 1-MHz and 80-MHz input signal,respectively,at 100 MS/s.The power dissipation is 23.4 mW including voltage/current reference at 1.8-V supply,and FoM is 0.85 pJ/step.The ADC core area is 0.53 mm^2.INL is -0.99 to 0.76 LSB,and DNL is -0.49 to 0.56 LSB.展开更多
The influence of temperature on the dielectric properties of sol-gel routed spin-coated molybdenum trioxide(MoO_(3)) thin film has been investigated.Prepared films were annealed at temperatures 250℃,350℃ and 400℃.T...The influence of temperature on the dielectric properties of sol-gel routed spin-coated molybdenum trioxide(MoO_(3)) thin film has been investigated.Prepared films were annealed at temperatures 250℃,350℃ and 400℃.The phase transformation from amorphous to-orthorhombic phase with preferential orientation(022)has been found by XRD for the film annealed above 250℃.The vibration modes of-orthorhombic MoO_(3) have been examined by Raman spectrum.The predominant Raman's band of-orthorhombic MoO_(3) thin film has been found at the frequency range 1000–600 cm^(-1).Using the UV–Vis spectrum,the band gap of the film is found to be 3.3–3.8 eV.The surface morphology of the MoO_(3) films has been examined by scanning electron microscope.The AC conductivity measurement of the MoO_(3) film has been carried out in the frequency range 10–10^(6) Hz.The frequency dependence of the impedance has been plotted in the complex plane.The variation of the capacitance and dielectric constant of MoO_(3) film with respect to temperature and frequency has been analyzed.Tunability of capacitance and figure of merit of the film are also determined.展开更多
This work demonstrates high-performance NiO/β-Ga_(2)O_(3) vertical heterojunction diodes(HJDs)with double-layer junc-tion termination extension(DL-JTE)consisting of two p-typed NiO layers with varied lengths.The bott...This work demonstrates high-performance NiO/β-Ga_(2)O_(3) vertical heterojunction diodes(HJDs)with double-layer junc-tion termination extension(DL-JTE)consisting of two p-typed NiO layers with varied lengths.The bottom 60-nm p-NiO layer fully covers theβ-Ga_(2)O_(3) wafer,while the geometry of the upper 60-nm p-NiO layer is 10μm larger than the square anode elec-trode.Compared with a single-layer JTE,the electric field concentration is inhibited by double-layer JTE structure effectively,resulting in the breakdown voltage being improved from 2020 to 2830 V.Moreover,double p-typed NiO layers allow more holes into the Ga_(2)O_(3) drift layer to reduce drift resistance.The specific on-resistance is reduced from 1.93 to 1.34 mΩ·cm^(2).The device with DL-JTE shows a power figure-of-merit(PFOM)of 5.98 GW/cm^(2),which is 2.8 times larger than that of the conven-tional single-layer JTE structure.These results indicate that the double-layer JTE structure provides a viable way of fabricating high-performance Ga_(2)O_(3) HJDs.展开更多
针对广东省的能见度观测展开研究,提出了适用于能见度观测布局适应性分布研究的新方案,旨在为器测替代目测的能见度监测网提供建议。研究表明:利用广东省86个地面气象观测站的2009—2011年能见度和相对湿度日平均值资料,计算得到了品质...针对广东省的能见度观测展开研究,提出了适用于能见度观测布局适应性分布研究的新方案,旨在为器测替代目测的能见度监测网提供建议。研究表明:利用广东省86个地面气象观测站的2009—2011年能见度和相对湿度日平均值资料,计算得到了品质因数(figure of merit,FOM指数)和空间影响范围因数(sphere of influence,SOI指数),并以此为依据对现有的能见度站点进行排名和分类。再根据确定的标准遴选所需站点,筛选时,如果排名低的站点影响的范围内超过50%的区域被排名高的站点影响范围所覆盖,则剔除此排名低的站点。筛选得到广东省能见度仪观测站网需要的最少站点数为43个。考虑到地形以及增加背景站等因素,最后综合考虑广东省能见度仪观测站网所需要的站点数为51个,该结果可为器测能见度观测站网建设提供参考。展开更多
基金supported by the National Natural Science Foundation of China (52103352, 52120105006, 21774130, 51925306)the National Key R&D Program of China (2018FYA 0305800)+1 种基金the Key Research Program of the Chinese Academy of Sciences (XDPB082)the Strategic Priority Research Program of Chinese Academy of Sciences (XDB28000000)。
文摘The polymerization of fused-ring acceptors(FRAs) to afford their corresponding polymeric acceptors for high-performance all-polymer solar cells(all-PSCs) has achieved remarkable progress in the past few years.However,due to the high degree of synthetic complexity for the monomer,the high-cost of these polymeric acceptors may limit their commercial applications.Thus,it is urgent to develop inexpensive and high-performance polymeric acceptors for all-PSCs.Herein,two novel polymeric acceptors(PBTzO and PBTzO-2F) have been designed and synthesized by copolymerization of noncovalently fused ring acceptors(NFRAs),which were employed in all-PSCs for the first time.Upon introducing the “noncovalently conformational locks(NoCLs)” in the backbone and selective fluorination of the end-group,photophysical and electrical properties,and solidstate packing properties of the NFRAs have been rationally tuned.As a result,the PBDB-T:PBTzO-2F based devices presented an excellent power conversion efficiency(PCE) of 11.04%,much higher than that of PBTzO based ones due to the increased charge generation and extraction,improved hole transfer and carrier mobilities,and reduced energy loss.More importantly,PBTzO-2F exhibited a much lower synthetic complexity(SC) index and higher figure-of-merit(FOM) values than the high-performance fused-ring acceptor based polymer acceptors(FRA-PAs) due to the simpler structures and more effective synthesis.This contribution provided a novel idea to achieve low-cost and high-performance all-PSCs.
基金Project supported by the National High Technology Research and Development Program of China(No.2009AA011600)the Young Scientists Fund of Fudan University,China(No.09FQ33)the State Key Laboratory of ASIC & System(Fudan University),China (No.09MS008).
文摘An 8-b 100-MS/s pipelined analog-to-digital converter（ADC） is presented.Without the dedicated sample-and -hold amplifier（SHA）,it achieves figure-of-merit and area 21%and 12%less than the conventional ADC with the dedicated SHA,respectively.The closed-loop bandwidth of op amps in multiplying DAC is modeled,providing guidelines for power optimization.The theory is well supported by transistor level simulations.A 0.18-μm 1P6M CMOS process was used to integrate the ADCs,and the measured results show that the effective number of bits is 7.43 bit and 6.94 bit for 1-MHz and 80-MHz input signal,respectively,at 100 MS/s.The power dissipation is 23.4 mW including voltage/current reference at 1.8-V supply,and FoM is 0.85 pJ/step.The ADC core area is 0.53 mm^2.INL is -0.99 to 0.76 LSB,and DNL is -0.49 to 0.56 LSB.
文摘The influence of temperature on the dielectric properties of sol-gel routed spin-coated molybdenum trioxide(MoO_(3)) thin film has been investigated.Prepared films were annealed at temperatures 250℃,350℃ and 400℃.The phase transformation from amorphous to-orthorhombic phase with preferential orientation(022)has been found by XRD for the film annealed above 250℃.The vibration modes of-orthorhombic MoO_(3) have been examined by Raman spectrum.The predominant Raman's band of-orthorhombic MoO_(3) thin film has been found at the frequency range 1000–600 cm^(-1).Using the UV–Vis spectrum,the band gap of the film is found to be 3.3–3.8 eV.The surface morphology of the MoO_(3) films has been examined by scanning electron microscope.The AC conductivity measurement of the MoO_(3) film has been carried out in the frequency range 10–10^(6) Hz.The frequency dependence of the impedance has been plotted in the complex plane.The variation of the capacitance and dielectric constant of MoO_(3) film with respect to temperature and frequency has been analyzed.Tunability of capacitance and figure of merit of the film are also determined.
基金supported by the National Natural Science Foundation of China under Grant U21A20503.
文摘This work demonstrates high-performance NiO/β-Ga_(2)O_(3) vertical heterojunction diodes(HJDs)with double-layer junc-tion termination extension(DL-JTE)consisting of two p-typed NiO layers with varied lengths.The bottom 60-nm p-NiO layer fully covers theβ-Ga_(2)O_(3) wafer,while the geometry of the upper 60-nm p-NiO layer is 10μm larger than the square anode elec-trode.Compared with a single-layer JTE,the electric field concentration is inhibited by double-layer JTE structure effectively,resulting in the breakdown voltage being improved from 2020 to 2830 V.Moreover,double p-typed NiO layers allow more holes into the Ga_(2)O_(3) drift layer to reduce drift resistance.The specific on-resistance is reduced from 1.93 to 1.34 mΩ·cm^(2).The device with DL-JTE shows a power figure-of-merit(PFOM)of 5.98 GW/cm^(2),which is 2.8 times larger than that of the conven-tional single-layer JTE structure.These results indicate that the double-layer JTE structure provides a viable way of fabricating high-performance Ga_(2)O_(3) HJDs.
文摘针对广东省的能见度观测展开研究,提出了适用于能见度观测布局适应性分布研究的新方案,旨在为器测替代目测的能见度监测网提供建议。研究表明:利用广东省86个地面气象观测站的2009—2011年能见度和相对湿度日平均值资料,计算得到了品质因数(figure of merit,FOM指数)和空间影响范围因数(sphere of influence,SOI指数),并以此为依据对现有的能见度站点进行排名和分类。再根据确定的标准遴选所需站点,筛选时,如果排名低的站点影响的范围内超过50%的区域被排名高的站点影响范围所覆盖,则剔除此排名低的站点。筛选得到广东省能见度仪观测站网需要的最少站点数为43个。考虑到地形以及增加背景站等因素,最后综合考虑广东省能见度仪观测站网所需要的站点数为51个,该结果可为器测能见度观测站网建设提供参考。
