摘要
为了优化横向双扩散金属氧化物半导体场效应晶体管(lateral double-diffused MOSFET,LDMOS)的击穿特性及器件性能,在传统LDMOS结构的基础上,提出了一种具有纵向辅助耗尽衬底层(assisted depletesubstrate layer,ADSL)的新型LDMOS.新加入的ADSL层使得漏端下方的纵向耗尽区大幅向衬底扩展,从而利用电场调制效应在ADSL层底部引入新的电场峰,使纵向电场得到优化,同时横向表面电场也因为电场调制效应而得到了优化.通过ISE仿真表明,当传统LDMOS与ADSL LDMOS的漂移区长度都是70μm时,击穿电压由462 V增大到897 V,提高了94%左右,并且优值也从0.55 MW/cm^2提升到1.24 MW/cm^2,提升了125%.因此,新结构ADSL LDMOS的器件性能较传统LDMOS有了极大的提升.进一步对ADSL层进行分区掺杂优化,在新结构的基础上,击穿电压在双分区时上升到938 V,三分区时为947 V.
Lateral double-diffused MOSFETs（LDMOS） are widely used in high voltage integrate circuits and smart power integrate circuits because of their lateral channels and their electrodes located on the surface of the device, thereby facilitating integration with other low-voltage circuits and devices, and they have become the core technology of the second electronic revolution.In order to optimize the breakdown characteristics and the performance of the LDMOS, in this paper, a novel LDMOS is proposed with the vertical assisted deplete-substrate layer（ADSL） on the basis of traditional LDMOS structure. The new ADSL layer makes the vertical depletion region below the drain expand to substrate excessively,thus introduces a new electric field peak at the bottom of the ADSL layer by using the electric field modulation effect,so that the vertical electric field is optimized. The ISE simulation results show that when the lengths of the drift region of ADSL LDMOS and traditional LDMOS are both 70 μm, the breakdown voltage is increased from 462 V to 897 V,improved by about 94%. Also, the figure-of-merit（FOM） is upgraded from 0.55 MW/cm^2 to 1.24 MW/cm^2, increased by 125%. Therefore, the new structure ADSL LDMOS has a great improvement in device performance compared with that of the traditional LDMOS.Moreover, authors have studied the ADSL LDMOS from three parts, all of these confirm that the new structure has a great potential application in power device. Firstly, through the lateral surface electric field distributions and vertical electric filed distributions of conventional LDMOS and ADSL LDMOS, a new electric field peak at the bottom of the ADSL is introduced in the vertical direction. Secondly, the mechanism for the new structure can present a deeper understanding through the ADSL LDMOS concentration and structural parameter optimization process. The FOM is optimized when the drift region concentration and ADSL concentration are 1.8 × 10^（15）cm^（-3）and 6.5 × 10^（15）cm^（-3）,respectively, and it
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2017年第7期382-388,共7页
Acta Physica Sinica
基金
国家重点基础研究发展计划(批准号:2014CB339900
2015CB351906)
国家自然科学基金重点项目(批准号:61234006
61334002)资助的课题~~
关键词
辅助耗尽衬底层
横向双扩散功率器件
击穿电压
优值
assisted deplete-substrate layer
lateral double-diffused MOSFET
breakdown voltage
figure-of-merit
