Interconnections in microelectronic packaging are not only the physical carrier to realize the function of electronic circuits,but also the weak spots in reliability tests.Most of failures in power devices are caused ...Interconnections in microelectronic packaging are not only the physical carrier to realize the function of electronic circuits,but also the weak spots in reliability tests.Most of failures in power devices are caused by the malfunction of interconnections,including failure of bonding wire as well as cracks of solder layer.In fact,the interconnection failure of power devices is the result of a combination of factors such as electricity,temperature,and force.It is significant to investigate the failure mechanisms of various factors for the failure analysis of interconnections in power devices.This paper reviews the main failure modes of bonding wire and solder layer in the interconnection structure of power devices,and its failure mechanism.Then the reliability test method and failure analysis techniques of interconnection in power device are introduced.These methods are of great significance to the reliability analysis and life prediction of power devices.展开更多
The realization of light-triggered devices where light is used as external stimulus to control the device performances is a long-standing goal in modern opto-electrical interconnection circuits.In this work,it reveals...The realization of light-triggered devices where light is used as external stimulus to control the device performances is a long-standing goal in modern opto-electrical interconnection circuits.In this work,it reveals that light illumination can induce the formation of p-n junctions along two-dimensional conduction channels.The results indicate that the dominant charge carrier type and density in black phosphorus(BP)conduction channel can be effectively modulated by the underlying cadmium sulfide(CdS)photogate layer under light illumination.This enables flexible switching of the working state between BP resistor and BP p-n diode in the designed semi-photo-gate transistor(SPGT)devices when switching the light on and off(ultra-low threshold light power).Simultaneously,the achieved BP p-n junctions also exhibit ultra-high photoresponsivity and evident photovoltaic properties.That is to say,light can be employed as external stimulus to define the BP p-n junctions,and in turn the p-n junctions will further convert the light into electrical power,showing all-in-one opto-electrical interconnection properties.Moreover,the SPGT device architecture is also applicable for construction of other ambipolar semiconductor-based(WSe2-and MoTe2-based)p-n diodes.Such universal all-in-one light-triggered lateral homogeneous pn junctions with ultra-low energy consumption should open a new pathway toward novel optoelectronic devices and deliver various new applications.展开更多
基金supported by the National Natural Science Foundation of China(Grant No.61904127 and 62004144)Guangdong Basic and Applied Basic Research Foundation(Grant No.2021A1515010651)+2 种基金Fundamental Research Funds for the Central Universities(Grant No.202401002,203134004,20212VA100 and 2021VB006)Hubei Provincial Natural Science Foundation of China(Grant No.2020CFA032)National Key R&D Program of China(Grant No.2019YFB1704600)。
文摘Interconnections in microelectronic packaging are not only the physical carrier to realize the function of electronic circuits,but also the weak spots in reliability tests.Most of failures in power devices are caused by the malfunction of interconnections,including failure of bonding wire as well as cracks of solder layer.In fact,the interconnection failure of power devices is the result of a combination of factors such as electricity,temperature,and force.It is significant to investigate the failure mechanisms of various factors for the failure analysis of interconnections in power devices.This paper reviews the main failure modes of bonding wire and solder layer in the interconnection structure of power devices,and its failure mechanism.Then the reliability test method and failure analysis techniques of interconnection in power device are introduced.These methods are of great significance to the reliability analysis and life prediction of power devices.
基金supported by the National Natural Science Foundation of China (51902098, 51972105, 51525202, and 61574054)the Hunan Provincial Natural Science Foundation (2018RS3051).
文摘The realization of light-triggered devices where light is used as external stimulus to control the device performances is a long-standing goal in modern opto-electrical interconnection circuits.In this work,it reveals that light illumination can induce the formation of p-n junctions along two-dimensional conduction channels.The results indicate that the dominant charge carrier type and density in black phosphorus(BP)conduction channel can be effectively modulated by the underlying cadmium sulfide(CdS)photogate layer under light illumination.This enables flexible switching of the working state between BP resistor and BP p-n diode in the designed semi-photo-gate transistor(SPGT)devices when switching the light on and off(ultra-low threshold light power).Simultaneously,the achieved BP p-n junctions also exhibit ultra-high photoresponsivity and evident photovoltaic properties.That is to say,light can be employed as external stimulus to define the BP p-n junctions,and in turn the p-n junctions will further convert the light into electrical power,showing all-in-one opto-electrical interconnection properties.Moreover,the SPGT device architecture is also applicable for construction of other ambipolar semiconductor-based(WSe2-and MoTe2-based)p-n diodes.Such universal all-in-one light-triggered lateral homogeneous pn junctions with ultra-low energy consumption should open a new pathway toward novel optoelectronic devices and deliver various new applications.
