In this study,(100)-oriented growth of Ba_(0.5)Sr_(0.5)TiO_3(BST)/LaNiO_3(LNO) stacks was obtained on Pt(111)/SiO_2/Si substrates by r.f.magnetron sputtering.The orientation of the subsequently deposited Ba_(0.5)Sr_(0...In this study,(100)-oriented growth of Ba_(0.5)Sr_(0.5)TiO_3(BST)/LaNiO_3(LNO) stacks was obtained on Pt(111)/SiO_2/Si substrates by r.f.magnetron sputtering.The orientation of the subsequently deposited Ba_(0.5)Sr_(0.5)TiO_3 thin film was strongly affected by the LNO under layer,and the BST thin film deposited on the(100)LNO-coated Si substrate was also found to have a significant(100)-oriented texture.Effects of LNO interlayer on the dielectric properties of BST thin films were investigated.As a result,the tunability of BST thin film was greatly improved with the insertion of(100)-oriented LNO under layer with proper thickness.展开更多
Ba0.6Sr0.4TiO3 (BST) thin films were fabricated on Pt coated Si (100) substrates by sol-gel techniques with molar ratio of (Ba+Sr) to Ti changing from 0.76 to 1.33. The effect of (Ba+Sr)/Ti ratio deviating from the st...Ba0.6Sr0.4TiO3 (BST) thin films were fabricated on Pt coated Si (100) substrates by sol-gel techniques with molar ratio of (Ba+Sr) to Ti changing from 0.76 to 1.33. The effect of (Ba+Sr)/Ti ratio deviating from the stoichiometry on microstructure, grain growth, dielectric and tunable properties of BST thin films were investigated. TiO2 and (Ba,Sr)2TiO4 were found as a second phase at the ratios of 0.76 and 1.33, respectively. The variation of the ratio reveals more significant effect on the grain size in B-site rich samples than that in A-site rich samples. The dissipation factor decreases rapidly from 0.1 to 0.01 at 1 MHz with decreasing (Ba+Sr)/Ti ratio. The tunability increases with decreasing ratio from 1.33 to 1.05, and then decreases with decreasing ratio from 1.05 to 0.76. The film with (Ba+Sr)/Ti ratio of 1.05 has a maximum tunability of 32% and a dissipation factor of 0.03 at 1 MHz.展开更多
基金the National Key Lab of Nano/Micro Fabrication Technology(No.9140C 790310060C79)the National Natural Science Foundation of China(No.60701012)
文摘In this study,(100)-oriented growth of Ba_(0.5)Sr_(0.5)TiO_3(BST)/LaNiO_3(LNO) stacks was obtained on Pt(111)/SiO_2/Si substrates by r.f.magnetron sputtering.The orientation of the subsequently deposited Ba_(0.5)Sr_(0.5)TiO_3 thin film was strongly affected by the LNO under layer,and the BST thin film deposited on the(100)LNO-coated Si substrate was also found to have a significant(100)-oriented texture.Effects of LNO interlayer on the dielectric properties of BST thin films were investigated.As a result,the tunability of BST thin film was greatly improved with the insertion of(100)-oriented LNO under layer with proper thickness.
基金Project (50332030) supported by the National Natural Science Foundation of China
文摘Ba0.6Sr0.4TiO3 (BST) thin films were fabricated on Pt coated Si (100) substrates by sol-gel techniques with molar ratio of (Ba+Sr) to Ti changing from 0.76 to 1.33. The effect of (Ba+Sr)/Ti ratio deviating from the stoichiometry on microstructure, grain growth, dielectric and tunable properties of BST thin films were investigated. TiO2 and (Ba,Sr)2TiO4 were found as a second phase at the ratios of 0.76 and 1.33, respectively. The variation of the ratio reveals more significant effect on the grain size in B-site rich samples than that in A-site rich samples. The dissipation factor decreases rapidly from 0.1 to 0.01 at 1 MHz with decreasing (Ba+Sr)/Ti ratio. The tunability increases with decreasing ratio from 1.33 to 1.05, and then decreases with decreasing ratio from 1.05 to 0.76. The film with (Ba+Sr)/Ti ratio of 1.05 has a maximum tunability of 32% and a dissipation factor of 0.03 at 1 MHz.
