High quality Sr14-xCaxCu24O41 single-crystals are successfully grown by floating-zone technique, and the trans- port properties are studied. The temperature dependence of resistivity along the c-axis direction is semi...High quality Sr14-xCaxCu24O41 single-crystals are successfully grown by floating-zone technique, and the trans- port properties are studied. The temperature dependence of resistivity along the c-axis direction is semiconductor- like for x ≤ 10 and it can be fitted by the thermal activation equation p = po exp（ △ /kBT） with kB being the Boltzmann constant and A the activation energy. A break in the slope of thermopower （S） versus the inverse temperature （1 IT） corresponding to the formation of charge-density waves （CD W） is first observed for x ≤ 6. The temperature dependence of thermopower becomes metallic for x ≥ 8 while the resistivity is still semiconductorlike. We propose that the insulation behaviour of the resistivity in the Ca doping range 8 ≤ x ≤ 11 could result from the localization of the charge carriers due to the disorder induced by Ca doping and a revised electronic phase diagram is derived based on our observations.展开更多
基金Supported by the National Basic Research Programme of China under Grant No 2007CB925001, and the Natural Science Foundation of Zhejiang Province under Grant No Y605106.
文摘High quality Sr14-xCaxCu24O41 single-crystals are successfully grown by floating-zone technique, and the trans- port properties are studied. The temperature dependence of resistivity along the c-axis direction is semiconductor- like for x ≤ 10 and it can be fitted by the thermal activation equation p = po exp（ △ /kBT） with kB being the Boltzmann constant and A the activation energy. A break in the slope of thermopower （S） versus the inverse temperature （1 IT） corresponding to the formation of charge-density waves （CD W） is first observed for x ≤ 6. The temperature dependence of thermopower becomes metallic for x ≥ 8 while the resistivity is still semiconductorlike. We propose that the insulation behaviour of the resistivity in the Ca doping range 8 ≤ x ≤ 11 could result from the localization of the charge carriers due to the disorder induced by Ca doping and a revised electronic phase diagram is derived based on our observations.
