Scorodite (FeAsO_(4)·H_(2)O) is a common arsenic-bearing (As-bearing) iron mineral in nearsurface environments that could immobilize or store As in a bound state.In flooded soils,microbe induced Fe(Ⅲ) or As(Ⅴ) ...Scorodite (FeAsO_(4)·H_(2)O) is a common arsenic-bearing (As-bearing) iron mineral in nearsurface environments that could immobilize or store As in a bound state.In flooded soils,microbe induced Fe(Ⅲ) or As(Ⅴ) reduction can increase the mobility and bioavailability of As.Additionally,humic substances can act as electron shuttles to promote this process.The dynamics of As release and diversity of putative As(Ⅴ)-reducing bacteria during scorodite reduction have yet to be investigated in detail in flooded soils.Here,the microbial reductive dissolution of scorodite was conducted in an flooded soil in the presence of anthraquinone-2,6-disulfonate (AQDS).Anaeromyxobacter,Dechloromonas,Geothrix,Geobacter,Ideonella,and Zoogloea were found to be the dominant indigenous bacteria during Fe(Ⅲ) and As(Ⅴ) reduction.AQDS increased the relative abundance of dominant species,but did not change the diversity and microbial community of the systems with scorodite.Among these bacteria,Geobacter exhibited the greatest increase and was the dominant Fe(Ⅲ)-and As(Ⅴ)-reducing bacteria during the incubation with AQDS and scorodite.AQDS promoted both Fe(Ⅲ) and As(Ⅴ) reduction,and over 80%of released As(Ⅴ) was microbially transformed to As(Ⅲ).The increases in the abundance of arrA gene and putative arrA sequences of Geobacter were higher with AQDS than without AQDS.As a result,the addition of AQDS promoted microbial Fe(Ⅲ) and As(Ⅴ) release and reduction from As-bearing iron minerals into the environment.These results contribute to exploration of the transformation of As from As-bearing iron minerals under anaerobic conditions,thus providing insights into the bioremediation of As-contaminated soil.展开更多
We present novel Schottky barrier field effect transistors consisting of a parallel array of bottom-up grown silicon nanowires that are able to deliver high current outputs. Axial silicidation of the nanowires is used...We present novel Schottky barrier field effect transistors consisting of a parallel array of bottom-up grown silicon nanowires that are able to deliver high current outputs. Axial silicidation of the nanowires is used to create defined Schottky junctions leading to on/off current ratios of up to 106. The device concept leverages the unique transport properties of nanoscale junctions to boost device performance for macroscopic applications. Using parallel arrays, on-currents of over 500 gA at a source-drain voltage of 0.5 V can be achieved. The transconductance is thus increased significantly while maintaining the transfer characteristics of single nanowire devices. By incorporating several hundred nanowires into the parallel arra36 the yield of functioning transistors is dramatically increased and device- to-device variability is reduced compared to single devices. This new nanowire- based platform provides sufficient current output to be employed as a transducer for biosensors or a driving stage for organic light-emitting diodes （LEDs）, while the bottom-up nature of the fabrication procedure means it can provide building blocks for novel printable electronic devices.展开更多
在模拟计算以 a- Si TFT为有源开关 ,以 a- Si PIN为光敏源的有源成像器件工作特性与各单元元件关系的基础上 ,详细讨论了单元器件的材料、物理参数对 a- Si TFT/PIN耦合对特性的影响 ,并给出一定试验结果 .用 L ED光源照射 a- Si PIN...在模拟计算以 a- Si TFT为有源开关 ,以 a- Si PIN为光敏源的有源成像器件工作特性与各单元元件关系的基础上 ,详细讨论了单元器件的材料、物理参数对 a- Si TFT/PIN耦合对特性的影响 ,并给出一定试验结果 .用 L ED光源照射 a- Si PIN的光电转换率可达 18.1n A/lx,a- Si展开更多
基金supported by the National Science Foundation of China(Nos.41977291 and 42177238)the Science and Technology Foundation of Guangdong,China (Nos.2019A1515011482 and2022A1515011093)+2 种基金the Strategic Priority Research Program (No.XDB40020300)the GDAS’Project of Science and Technology Development (Nos.2019GDASYL-0102002-5 and2020GDASYL-20200103077)Light of West China of Chinese Academy of Sciences。
文摘Scorodite (FeAsO_(4)·H_(2)O) is a common arsenic-bearing (As-bearing) iron mineral in nearsurface environments that could immobilize or store As in a bound state.In flooded soils,microbe induced Fe(Ⅲ) or As(Ⅴ) reduction can increase the mobility and bioavailability of As.Additionally,humic substances can act as electron shuttles to promote this process.The dynamics of As release and diversity of putative As(Ⅴ)-reducing bacteria during scorodite reduction have yet to be investigated in detail in flooded soils.Here,the microbial reductive dissolution of scorodite was conducted in an flooded soil in the presence of anthraquinone-2,6-disulfonate (AQDS).Anaeromyxobacter,Dechloromonas,Geothrix,Geobacter,Ideonella,and Zoogloea were found to be the dominant indigenous bacteria during Fe(Ⅲ) and As(Ⅴ) reduction.AQDS increased the relative abundance of dominant species,but did not change the diversity and microbial community of the systems with scorodite.Among these bacteria,Geobacter exhibited the greatest increase and was the dominant Fe(Ⅲ)-and As(Ⅴ)-reducing bacteria during the incubation with AQDS and scorodite.AQDS promoted both Fe(Ⅲ) and As(Ⅴ) reduction,and over 80%of released As(Ⅴ) was microbially transformed to As(Ⅲ).The increases in the abundance of arrA gene and putative arrA sequences of Geobacter were higher with AQDS than without AQDS.As a result,the addition of AQDS promoted microbial Fe(Ⅲ) and As(Ⅴ) release and reduction from As-bearing iron minerals into the environment.These results contribute to exploration of the transformation of As from As-bearing iron minerals under anaerobic conditions,thus providing insights into the bioremediation of As-contaminated soil.
文摘We present novel Schottky barrier field effect transistors consisting of a parallel array of bottom-up grown silicon nanowires that are able to deliver high current outputs. Axial silicidation of the nanowires is used to create defined Schottky junctions leading to on/off current ratios of up to 106. The device concept leverages the unique transport properties of nanoscale junctions to boost device performance for macroscopic applications. Using parallel arrays, on-currents of over 500 gA at a source-drain voltage of 0.5 V can be achieved. The transconductance is thus increased significantly while maintaining the transfer characteristics of single nanowire devices. By incorporating several hundred nanowires into the parallel arra36 the yield of functioning transistors is dramatically increased and device- to-device variability is reduced compared to single devices. This new nanowire- based platform provides sufficient current output to be employed as a transducer for biosensors or a driving stage for organic light-emitting diodes （LEDs）, while the bottom-up nature of the fabrication procedure means it can provide building blocks for novel printable electronic devices.
文摘在模拟计算以 a- Si TFT为有源开关 ,以 a- Si PIN为光敏源的有源成像器件工作特性与各单元元件关系的基础上 ,详细讨论了单元器件的材料、物理参数对 a- Si TFT/PIN耦合对特性的影响 ,并给出一定试验结果 .用 L ED光源照射 a- Si PIN的光电转换率可达 18.1n A/lx,a- Si
