军事电子装备和民用通信系统复杂度日益提升,射频(Radio Frequency,RF)集成技术正从传统的混合集成技术或多芯片组件技术向芯片化的系统级封装技术(System in Packaging,SiP)快速发展。对射频系统级封装(RF-SiP)中的高性能互连技术需求...军事电子装备和民用通信系统复杂度日益提升,射频(Radio Frequency,RF)集成技术正从传统的混合集成技术或多芯片组件技术向芯片化的系统级封装技术(System in Packaging,SiP)快速发展。对射频系统级封装(RF-SiP)中的高性能互连技术需求进行了分析,依据先进封装互连技术的发展趋势,总结了芯片倒装集成、芯片埋置与扇出以及三维堆叠等技术在面向RF-SiP应用的最新研究进展,最后提出了射频系统级封装互连技术的主要挑战和发展方向。展开更多
The dissociation of a [1-01] superdislocation in Ni 3Al was studied by computer simulation techniques using the embedded atom method (EAM). Three types of dissociation were obtained, depending on the initial position ...The dissociation of a [1-01] superdislocation in Ni 3Al was studied by computer simulation techniques using the embedded atom method (EAM). Three types of dissociation were obtained, depending on the initial position of elastic centers of the superdislocation. One is the stable planar dissociation that the superdislocation dissociates on only one {111} plane into a pair of 1/2[1-01] superpartials separated by antiphase boundary (APB). Another stable dissociation is that it occurs on two adjacent {111} planes joined by an intersecting {111} or (010) plane. The metastable one is that the dissociation occurs in T shape: the superdislocation dissociates on two intersecting {111} planes into three partials: one 1/2[1-01] partial and two widely separated 1/6〈112〉 Shockley partials with a complex stacking fault (CSF) in between.展开更多
基金supported in part by the General Research Fund CUHK417807 and CUHK418708 from Hong Kong SAR Research Grants Council(RGC)by National Science Foundation of China(NSFC) under grant No.60876029a grant N CUHK417/08 from the NSFC/RGC Joint Research Scheme
文摘军事电子装备和民用通信系统复杂度日益提升,射频(Radio Frequency,RF)集成技术正从传统的混合集成技术或多芯片组件技术向芯片化的系统级封装技术(System in Packaging,SiP)快速发展。对射频系统级封装(RF-SiP)中的高性能互连技术需求进行了分析,依据先进封装互连技术的发展趋势,总结了芯片倒装集成、芯片埋置与扇出以及三维堆叠等技术在面向RF-SiP应用的最新研究进展,最后提出了射频系统级封装互连技术的主要挑战和发展方向。
文摘The dissociation of a [1-01] superdislocation in Ni 3Al was studied by computer simulation techniques using the embedded atom method (EAM). Three types of dissociation were obtained, depending on the initial position of elastic centers of the superdislocation. One is the stable planar dissociation that the superdislocation dissociates on only one {111} plane into a pair of 1/2[1-01] superpartials separated by antiphase boundary (APB). Another stable dissociation is that it occurs on two adjacent {111} planes joined by an intersecting {111} or (010) plane. The metastable one is that the dissociation occurs in T shape: the superdislocation dissociates on two intersecting {111} planes into three partials: one 1/2[1-01] partial and two widely separated 1/6〈112〉 Shockley partials with a complex stacking fault (CSF) in between.
