The electronic structures and magnetic properties of the Cu and N codoped 3C-Si C system have been investigated by the first-principles calculation.The results show that the Cu doped Si C system prefers the anti-ferro...The electronic structures and magnetic properties of the Cu and N codoped 3C-Si C system have been investigated by the first-principles calculation.The results show that the Cu doped Si C system prefers the anti-ferromagnetic（AFM） state.Compared to the Cu doped system,the ionicities of C–Cu and C–Si in Cu and N codoped Si C are respectively enhanced and weakened.Especially,the Cu and N codoped Si C systems favor the ferromagnetic（FM） coupling.The FM interactions can be explained by virtual hopping.However,higher N concentration will weaken the ferromagnetism.In order to keep the FM interaction,the N concentration should be restricted within 9.3% according to our analysis.展开更多
mm SiC films with high electrical uniformity a re grown on Si(111) by a newly developed vertical low-pressure chemical vapor dep osition (LPCVD) reactor.Both in-situ n- and p-type doping of 3C-SiC are achi eved by in...mm SiC films with high electrical uniformity a re grown on Si(111) by a newly developed vertical low-pressure chemical vapor dep osition (LPCVD) reactor.Both in-situ n- and p-type doping of 3C-SiC are achi eved by intentional introduction of ammonia and boron into the precursor gases.T he dependence of growth rate and surface morphology on the C/Si ratio and optimi zed growth conditions is obtained.The best electrical uniformity of 50mm 3C-SiC films obtained by non-contact sheet resistance measurement is ±2.58%.GaN fil ms are grown atop the as-grown 3C-SiC/Si(111) layers using molecular beam epit axy (MBE).The data of both X-ray diffraction and low temperature photoluminesc e nce of GaN/3C-SiC/Si(111) show that 3C-SiC is an appropriate substrate or buff er layer for the growth of Ⅲ-nitrides on Si substrates with no cracks.展开更多
基金Project supported by the Higher School Science Research Outstanding Youth Fund Project of Ningxia,China(Grant No.NGY2015049)
文摘The electronic structures and magnetic properties of the Cu and N codoped 3C-Si C system have been investigated by the first-principles calculation.The results show that the Cu doped Si C system prefers the anti-ferromagnetic（AFM） state.Compared to the Cu doped system,the ionicities of C–Cu and C–Si in Cu and N codoped Si C are respectively enhanced and weakened.Especially,the Cu and N codoped Si C systems favor the ferromagnetic（FM） coupling.The FM interactions can be explained by virtual hopping.However,higher N concentration will weaken the ferromagnetism.In order to keep the FM interaction,the N concentration should be restricted within 9.3% according to our analysis.
文摘mm SiC films with high electrical uniformity a re grown on Si(111) by a newly developed vertical low-pressure chemical vapor dep osition (LPCVD) reactor.Both in-situ n- and p-type doping of 3C-SiC are achi eved by intentional introduction of ammonia and boron into the precursor gases.T he dependence of growth rate and surface morphology on the C/Si ratio and optimi zed growth conditions is obtained.The best electrical uniformity of 50mm 3C-SiC films obtained by non-contact sheet resistance measurement is ±2.58%.GaN fil ms are grown atop the as-grown 3C-SiC/Si(111) layers using molecular beam epit axy (MBE).The data of both X-ray diffraction and low temperature photoluminesc e nce of GaN/3C-SiC/Si(111) show that 3C-SiC is an appropriate substrate or buff er layer for the growth of Ⅲ-nitrides on Si substrates with no cracks.
