摘要
mm SiC films with high electrical uniformity a re grown on Si(111) by a newly developed vertical low-pressure chemical vapor dep osition (LPCVD) reactor.Both in-situ n- and p-type doping of 3C-SiC are achi eved by intentional introduction of ammonia and boron into the precursor gases.T he dependence of growth rate and surface morphology on the C/Si ratio and optimi zed growth conditions is obtained.The best electrical uniformity of 50mm 3C-SiC films obtained by non-contact sheet resistance measurement is ±2.58%.GaN fil ms are grown atop the as-grown 3C-SiC/Si(111) layers using molecular beam epit axy (MBE).The data of both X-ray diffraction and low temperature photoluminesc e nce of GaN/3C-SiC/Si(111) show that 3C-SiC is an appropriate substrate or buff er layer for the growth of Ⅲ-nitrides on Si substrates with no cracks.
利用新研制出的垂直式低压 CVD(L PCVD) Si C生长系统 ,获得了高质量的 5 0 mm 3C- Si C/ Si(111)衬底材料 .系统研究了 3C- Si C的 n型和 p型原位掺杂技术 ,获得了生长速率和表面形貌对反应气体中 Si H4 流量和 C/ Si原子比率的依赖关系 .利用 Hall测试技术、非接触式方块电阻测试方法和 SIMS,分别研究了 3C- Si C的电学特性、均匀性和故意调制掺杂的 N浓度纵向分布 .利用 MBE方法 ,在原生长的 5 0 mm 3C- Si C/ Si(111)衬底上进行了 Ga N的外延生长 ,并研究了 Ga N材料的表面、结构和光学特性 .结果表明 3C- Si C是一种适合于高质量无裂纹 Ga N外延生长的衬底或缓冲材料 .
基金
国家重点基础研究专项基金 (批准号 :G2 0 0 0 0 683 -6)
国家高技术研究发展计划 (批准号 :2 0 0 1AA3 110 90 )资助项目~~
