The composition, phase structure, and microstructure of the discontinuous multilayer films [NiFeCo(10 nm)/ Ag(10 nm)]×20 annealed at temperature 280, 320, 360 and 400℃, respectively were investigated. GMR (giant...The composition, phase structure, and microstructure of the discontinuous multilayer films [NiFeCo(10 nm)/ Ag(10 nm)]×20 annealed at temperature 280, 320, 360 and 400℃, respectively were investigated. GMR (giant magnetore-sistance) ratios of the multilayer films were measured at different temperatures. The results showed that FeNi3 precipitated at 360℃ and dissolved at 400℃. The films annealed at 360℃ for 1 h exhibited the highest GMR ratio 11% when saturation field was equal to 79.6 kA/m.展开更多
The composition, phase structure and microstructure of the discontinuous multilayer film[NiFeCo（10 nm）/Ag（10 nm）]×20 were investigated after Co ion implantation and annealing at 280, 320,360 and 400℃, respec...The composition, phase structure and microstructure of the discontinuous multilayer film[NiFeCo（10 nm）/Ag（10 nm）]×20 were investigated after Co ion implantation and annealing at 280, 320,360 and 400℃, respectively.GMR （giant magnetoresistance） ratio of the film with/without Co ion implantation was measured. The results showed that Co ion implantation decreased the granule size of the annealed multilayer film, and increased Hc value and GMR ratio of the multilayer film. After annealing at 360℃, the multilayer film [NiFeCo（10 nm）/Ag（10 nm）]×20 with/without Co ion implantation both exhibited the highest GMR ratio of 12.4%/11% under 79.6 kA/m of applied saturation magnetic field.展开更多
A gate-all-around cylindrical （GAAC） transistor for sub-10nm scaling is proposed. The GAAC transistor device physics,TCAD simulation,and proposed fabrication procedure are reported for the first time. Among all othe...A gate-all-around cylindrical （GAAC） transistor for sub-10nm scaling is proposed. The GAAC transistor device physics,TCAD simulation,and proposed fabrication procedure are reported for the first time. Among all other novel FinFET devices, the gate-all-around cylindrical device can be particularly applied for reducing the problems of the conventional multi-gate FinFET and improving the device performance and the scale down capability. According to our simulation,the gate-all-around cylindrical device shows many benefits over conventional multi-gate FinFET, including gate-all- around rectangular （GAAR） devices. With gate-all-around cylindrical architecture,the transistor is controlled by an essen- tially infinite number of gates surrounding the entire cylinder-shaped channel. The electrical integrity within the channel is improved by reducing the leakage current due to the non-symmetrical field accumulation such as the corner effect. The proposed fabrication procedures for devices having GAAC device architecture are also discussed. The method is characterized by its simplicity and full compatibility with conventional planar CMOS technology.展开更多
Spin dynamics in several different types of ferromagnetic metal （FM）/10-nm-thick n-type GaAs quantum well （QW） junctions is studied by means of time-resolved Kerr rotation measurements. Compared with the MnGa/insi...Spin dynamics in several different types of ferromagnetic metal （FM）/10-nm-thick n-type GaAs quantum well （QW） junctions is studied by means of time-resolved Kerr rotation measurements. Compared with the MnGa/insitu doped lO-nm-thick n-type GaAs QW junction, the spin lifetime of the MnGa/modulation-doped 10-nm-thick n-type GaAs QW junction is shorter by a factor of 6, consistent with the D＇yakonov Perel＇ spin relaxation mechanism. Meanwhile, compared with the spin lifetime of the MnAs/in-situ doped 10-nm-thick n-type GaAs QW junction, the MnGa/in-situ doped 10-nm-thick n-type GaAs QW junction is of a spin lifetime longer by a factor of 4.2. The later observation is well explained by the Rashba effect in the presence of structure inversion asymmetry, which acts directly on photo-excited electron spins. We demonstrate that MnGa-like FM/in-situ doped 10-nm-thick n-type GaAs QW junctions, which possess relatively low interfaciai potential barriers, are able to provide long spin lifetimes.展开更多
基金This work was supported by the National Natural Science Foundation of China under grant No.59771026.
文摘The composition, phase structure, and microstructure of the discontinuous multilayer films [NiFeCo(10 nm)/ Ag(10 nm)]×20 annealed at temperature 280, 320, 360 and 400℃, respectively were investigated. GMR (giant magnetore-sistance) ratios of the multilayer films were measured at different temperatures. The results showed that FeNi3 precipitated at 360℃ and dissolved at 400℃. The films annealed at 360℃ for 1 h exhibited the highest GMR ratio 11% when saturation field was equal to 79.6 kA/m.
基金support by the National Natural Science Foundation of China under grant No.59771026.
文摘The composition, phase structure and microstructure of the discontinuous multilayer film[NiFeCo（10 nm）/Ag（10 nm）]×20 were investigated after Co ion implantation and annealing at 280, 320,360 and 400℃, respectively.GMR （giant magnetoresistance） ratio of the film with/without Co ion implantation was measured. The results showed that Co ion implantation decreased the granule size of the annealed multilayer film, and increased Hc value and GMR ratio of the multilayer film. After annealing at 360℃, the multilayer film [NiFeCo（10 nm）/Ag（10 nm）]×20 with/without Co ion implantation both exhibited the highest GMR ratio of 12.4%/11% under 79.6 kA/m of applied saturation magnetic field.
文摘A gate-all-around cylindrical （GAAC） transistor for sub-10nm scaling is proposed. The GAAC transistor device physics,TCAD simulation,and proposed fabrication procedure are reported for the first time. Among all other novel FinFET devices, the gate-all-around cylindrical device can be particularly applied for reducing the problems of the conventional multi-gate FinFET and improving the device performance and the scale down capability. According to our simulation,the gate-all-around cylindrical device shows many benefits over conventional multi-gate FinFET, including gate-all- around rectangular （GAAR） devices. With gate-all-around cylindrical architecture,the transistor is controlled by an essen- tially infinite number of gates surrounding the entire cylinder-shaped channel. The electrical integrity within the channel is improved by reducing the leakage current due to the non-symmetrical field accumulation such as the corner effect. The proposed fabrication procedures for devices having GAAC device architecture are also discussed. The method is characterized by its simplicity and full compatibility with conventional planar CMOS technology.
文摘Spin dynamics in several different types of ferromagnetic metal （FM）/10-nm-thick n-type GaAs quantum well （QW） junctions is studied by means of time-resolved Kerr rotation measurements. Compared with the MnGa/insitu doped lO-nm-thick n-type GaAs QW junction, the spin lifetime of the MnGa/modulation-doped 10-nm-thick n-type GaAs QW junction is shorter by a factor of 6, consistent with the D＇yakonov Perel＇ spin relaxation mechanism. Meanwhile, compared with the spin lifetime of the MnAs/in-situ doped 10-nm-thick n-type GaAs QW junction, the MnGa/in-situ doped 10-nm-thick n-type GaAs QW junction is of a spin lifetime longer by a factor of 4.2. The later observation is well explained by the Rashba effect in the presence of structure inversion asymmetry, which acts directly on photo-excited electron spins. We demonstrate that MnGa-like FM/in-situ doped 10-nm-thick n-type GaAs QW junctions, which possess relatively low interfaciai potential barriers, are able to provide long spin lifetimes.
