主要研究了SiC雪崩光电二极管(APD)阵列对微弱紫外光的探测均匀性问题,设计并制备了1×128 SiC APD探测阵列,通过表征各像素点的电流-电压曲线,提取出APD阵列的击穿电压波动在±0.1 V;通过被动淬灭电路表征各像素点的微弱紫外...主要研究了SiC雪崩光电二极管(APD)阵列对微弱紫外光的探测均匀性问题,设计并制备了1×128 SiC APD探测阵列,通过表征各像素点的电流-电压曲线,提取出APD阵列的击穿电压波动在±0.1 V;通过被动淬灭电路表征各像素点的微弱紫外光探测能力,提取出APD阵列的暗计数率波动在±0.5 Hz/μm^(2),单光子探测效率波动在±0.4%,良率达到91%,结果表明本工作设计的SiC APD探测阵列能够为微弱紫外光成像技术提供可行的技术方案。展开更多
A new type of single-walled carbon nanotube （SWNT） thin-film transistor （TFT） structure with a nanomesh network channel has been fabricated from a pre- separated semiconducting nanotube solution and simultaneously...A new type of single-walled carbon nanotube （SWNT） thin-film transistor （TFT） structure with a nanomesh network channel has been fabricated from a pre- separated semiconducting nanotube solution and simultaneously achieved both high uniformity and a high on/off ratio for application in large-scale integrated circuits. The nanomesh structure is prepared on a high-density SWNT network channel and enables a high on/off ratio while maintaining the excellent uniformity of the electrical properties of the SWNT TFTs. These effects are attributed to the effective elimination of metallic paths across the source/drain electrodes by forming the nanomesh structure in the high-density SWNT network channel. Therefore, our approach can serve as a critical foundation for future nanotube-based thin- film display electronics.展开更多
文摘A new type of single-walled carbon nanotube （SWNT） thin-film transistor （TFT） structure with a nanomesh network channel has been fabricated from a pre- separated semiconducting nanotube solution and simultaneously achieved both high uniformity and a high on/off ratio for application in large-scale integrated circuits. The nanomesh structure is prepared on a high-density SWNT network channel and enables a high on/off ratio while maintaining the excellent uniformity of the electrical properties of the SWNT TFTs. These effects are attributed to the effective elimination of metallic paths across the source/drain electrodes by forming the nanomesh structure in the high-density SWNT network channel. Therefore, our approach can serve as a critical foundation for future nanotube-based thin- film display electronics.
