Herein we report the room-temperature epitaxial growth of V203 films by laser molecule beam epitaxy. X-ray diffraction pro- files show the room-temperature epitaxial V2O3 films orient in the [ 110] direction on α-Al2...Herein we report the room-temperature epitaxial growth of V203 films by laser molecule beam epitaxy. X-ray diffraction pro- files show the room-temperature epitaxial V2O3 films orient in the [ 110] direction on α-Al2O3 （0001） substrates. Atomic force microscopy measurements reveal that the ultra-smooth surfaces with root-mean-square surface roughness of 0.11 nm and 0.28 nm for 10-nm-thick and 35-nm-thick V2O3 film, respectively. X-ray photoelectron spectroscopy results indicate the V3＋ oxida- tion state in the films. Typical metal-insulator transition is observed in films at about 135 K. The resistivities at 300 K are ap- proximately 0.8 mΩ cm and 0.5 mΩ cm for 10-rim-thick and 35-nm-thick V203 film, respectively.展开更多
基金supported by the National Basic Research Program of China(Grant Nos.2010CB630704 and 2012CB921403)
文摘Herein we report the room-temperature epitaxial growth of V203 films by laser molecule beam epitaxy. X-ray diffraction pro- files show the room-temperature epitaxial V2O3 films orient in the [ 110] direction on α-Al2O3 （0001） substrates. Atomic force microscopy measurements reveal that the ultra-smooth surfaces with root-mean-square surface roughness of 0.11 nm and 0.28 nm for 10-nm-thick and 35-nm-thick V2O3 film, respectively. X-ray photoelectron spectroscopy results indicate the V3＋ oxida- tion state in the films. Typical metal-insulator transition is observed in films at about 135 K. The resistivities at 300 K are ap- proximately 0.8 mΩ cm and 0.5 mΩ cm for 10-rim-thick and 35-nm-thick V203 film, respectively.
