InSe是一种新兴的二维层状材料,具有多种优异的光学特性。随着层数的降低,带隙从近红外逐步变到可见(1.26 e V到2.11 e V),如此大的可调谐的带隙和高本征迁移率,让其在光电探测领域有着良好的应用前景。但是研究发现,InSe在空气中不稳定...InSe是一种新兴的二维层状材料,具有多种优异的光学特性。随着层数的降低,带隙从近红外逐步变到可见(1.26 e V到2.11 e V),如此大的可调谐的带隙和高本征迁移率,让其在光电探测领域有着良好的应用前景。但是研究发现,InSe在空气中不稳定,易被氧化,很大的限制了其应用。而石墨烯具有极宽的光谱吸收范围和高电子迁移率,同时具有理论上97.7%的透光率。因此石墨烯-InSe复合体系能够充分将石墨烯优异的电子传输特性以及InSe突出的光学吸收特性结合起来,从而提升光电性能。本文首先利用干法转移制备了石墨烯和InSe的异质结构,然后通过阶段式退火处理调控了两者之间的相互作用,研究发现随着退火时间的加长,被石墨烯覆盖的InSe荧光强度逐渐降低,说明二者之间相互作用逐渐增强,InSe中更多的电子转移到石墨烯中,极大的提升其光电特性。该结果为异质结相互作用的调控以及光电性能的提升提供了非常好的途径。展开更多
The polarization switching plays a crucial role in controlling the final products in the catalytic pro-cess.The effect of polarization orientation on nitrogen reduction was investigated by anchoring transition metal a...The polarization switching plays a crucial role in controlling the final products in the catalytic pro-cess.The effect of polarization orientation on nitrogen reduction was investigated by anchoring transition metal atoms to form active centers on ferroelectric material In_(2)Se_(3).During the polariza-tion switching process,the difference in surface electrostatic potential leads to a redistribution of electronic states.This affects the interaction strength between the adsorbed small molecules and the catalyst substrate,thereby altering the reaction barrier.In addition,the surface states must be considered to prevent the adsorption of other small molecules(such as*O,*OH,and*H).Further-more,the V@↓-In_(2)Se_(3)possesses excellent catalytic properties,high electrochemical and thermody-namic stability,which facilitates the catalytic process.Machine learning also helps us further ex-plore the underlying mechanisms.The systematic investigation provides novel insights into the design and application of two-dimensional switchable ferroelectric catalysts for various chemical processes.展开更多
Two-dimensional transition metal dichalcogenides heterostructures have stimulated wide in- terest not only for the fundamental research, but also for the application of next generation electronic and optoelectronic de...Two-dimensional transition metal dichalcogenides heterostructures have stimulated wide in- terest not only for the fundamental research, but also for the application of next generation electronic and optoelectronic devices. Herein, we report a successful two-step chemical vapor deposition strategy to construct vertically stacked van der Waals epitaxial In2Se3/MoSe2 heterostructures. Transmission electron microscopy characterization reveals clearly that the In2Se3 has well-aligned lattice orientation with the substrate of monolayer MoSe2. Due to the interaction between the In2Se3 and MoSe2 layers, the heterostructure shows the quench- ing and red-shift of photoluminescence. Moreover, the current rectification behavior and photovoltaic effect can be observed from the heterostructure, which is attributed to the unique band structure alignment of the heterostructure, and is further confirmed by Kevin probe force microscopy measurement. The synthesis approach via van der Waals epitaxy in this work can expand the way to fabricate a variety of two-dimensional heterostructures for potential applications in electronic and optoelectronic devices.展开更多
文摘InSe是一种新兴的二维层状材料,具有多种优异的光学特性。随着层数的降低,带隙从近红外逐步变到可见(1.26 e V到2.11 e V),如此大的可调谐的带隙和高本征迁移率,让其在光电探测领域有着良好的应用前景。但是研究发现,InSe在空气中不稳定,易被氧化,很大的限制了其应用。而石墨烯具有极宽的光谱吸收范围和高电子迁移率,同时具有理论上97.7%的透光率。因此石墨烯-InSe复合体系能够充分将石墨烯优异的电子传输特性以及InSe突出的光学吸收特性结合起来,从而提升光电性能。本文首先利用干法转移制备了石墨烯和InSe的异质结构,然后通过阶段式退火处理调控了两者之间的相互作用,研究发现随着退火时间的加长,被石墨烯覆盖的InSe荧光强度逐渐降低,说明二者之间相互作用逐渐增强,InSe中更多的电子转移到石墨烯中,极大的提升其光电特性。该结果为异质结相互作用的调控以及光电性能的提升提供了非常好的途径。
文摘The polarization switching plays a crucial role in controlling the final products in the catalytic pro-cess.The effect of polarization orientation on nitrogen reduction was investigated by anchoring transition metal atoms to form active centers on ferroelectric material In_(2)Se_(3).During the polariza-tion switching process,the difference in surface electrostatic potential leads to a redistribution of electronic states.This affects the interaction strength between the adsorbed small molecules and the catalyst substrate,thereby altering the reaction barrier.In addition,the surface states must be considered to prevent the adsorption of other small molecules(such as*O,*OH,and*H).Further-more,the V@↓-In_(2)Se_(3)possesses excellent catalytic properties,high electrochemical and thermody-namic stability,which facilitates the catalytic process.Machine learning also helps us further ex-plore the underlying mechanisms.The systematic investigation provides novel insights into the design and application of two-dimensional switchable ferroelectric catalysts for various chemical processes.
文摘Two-dimensional transition metal dichalcogenides heterostructures have stimulated wide in- terest not only for the fundamental research, but also for the application of next generation electronic and optoelectronic devices. Herein, we report a successful two-step chemical vapor deposition strategy to construct vertically stacked van der Waals epitaxial In2Se3/MoSe2 heterostructures. Transmission electron microscopy characterization reveals clearly that the In2Se3 has well-aligned lattice orientation with the substrate of monolayer MoSe2. Due to the interaction between the In2Se3 and MoSe2 layers, the heterostructure shows the quench- ing and red-shift of photoluminescence. Moreover, the current rectification behavior and photovoltaic effect can be observed from the heterostructure, which is attributed to the unique band structure alignment of the heterostructure, and is further confirmed by Kevin probe force microscopy measurement. The synthesis approach via van der Waals epitaxy in this work can expand the way to fabricate a variety of two-dimensional heterostructures for potential applications in electronic and optoelectronic devices.
