The diamond films adherent to Si substrate are deposited with the microwave plasma CVD(MPCVD) at microwave powers of 6000 W and 4000 W from 6 h to 10 h,respectively,the internal stresses of the films are measured by X...The diamond films adherent to Si substrate are deposited with the microwave plasma CVD(MPCVD) at microwave powers of 6000 W and 4000 W from 6 h to 10 h,respectively,the internal stresses of the films are measured by XRD.Spectral peak shift and widening are applied to calculate the magnitudes of macro and micro stresses.The results show that the macro stress is tensile.The internal stress can be controlled by the microwave power.With the microwave power increasing,the intrinsic and macro stresses decrease,and the micro stress increases significantly.Also,it can be found that the macro and micro stresses increase with deposited time when the other conditions are the same.展开更多
本文研究了采用微波等离子体辅助化学气相沉积方法在几种碳化物形成元素衬底上生长金刚石薄膜的可能性。用扫描电镜和 X 射线衍射等手段对薄膜的形貌和结构进行了分析。结果表明,在620～650℃的沉积条件下,各衬底表面均可生长出晶体特...本文研究了采用微波等离子体辅助化学气相沉积方法在几种碳化物形成元素衬底上生长金刚石薄膜的可能性。用扫描电镜和 X 射线衍射等手段对薄膜的形貌和结构进行了分析。结果表明,在620～650℃的沉积条件下,各衬底表面均可生长出晶体特征良好的金刚石薄膜;在衬底和薄膜之间均存在一到二种碳化物过渡层,其组成与较高温度沉积条件下获得的碳化物有一定区别,趋于形成碳含量较低的碳化物相。在若干种衬底上,如 Mo、Nb、Ta、Si 和 Ti 上,获得了与基体结合良好的金刚石薄膜。展开更多
基金supported by the National Natural Science Foundation of China(No.60576011)Key Laboratory Foundation of Tianjin(No.06TXTJJC14701)Colleges and Universities Foundation of Tianjin(No.20050519)
文摘The diamond films adherent to Si substrate are deposited with the microwave plasma CVD(MPCVD) at microwave powers of 6000 W and 4000 W from 6 h to 10 h,respectively,the internal stresses of the films are measured by XRD.Spectral peak shift and widening are applied to calculate the magnitudes of macro and micro stresses.The results show that the macro stress is tensile.The internal stress can be controlled by the microwave power.With the microwave power increasing,the intrinsic and macro stresses decrease,and the micro stress increases significantly.Also,it can be found that the macro and micro stresses increase with deposited time when the other conditions are the same.
文摘本文研究了采用微波等离子体辅助化学气相沉积方法在几种碳化物形成元素衬底上生长金刚石薄膜的可能性。用扫描电镜和 X 射线衍射等手段对薄膜的形貌和结构进行了分析。结果表明,在620～650℃的沉积条件下,各衬底表面均可生长出晶体特征良好的金刚石薄膜;在衬底和薄膜之间均存在一到二种碳化物过渡层,其组成与较高温度沉积条件下获得的碳化物有一定区别,趋于形成碳含量较低的碳化物相。在若干种衬底上,如 Mo、Nb、Ta、Si 和 Ti 上,获得了与基体结合良好的金刚石薄膜。
