摘要
报道了在 Ｓｉ Ｏ２ 和 Ｓｉ３ Ｎ４ 膜上用 Ｒ Ｔ Ｃ Ｖ Ｄ 法直接沉积多晶硅薄膜的实验结果，在这两种薄膜上制备出了具有柱状晶粒的多晶硅薄膜，发现两者在薄膜的结构和结晶取向上有很大不同。用 Ｒ Ｔ Ｃ Ｖ Ｄ 法在 Ｓｉ Ｏ２ 膜上沉积的多晶硅膜，晶粒较大，晶粒间的空隙也较大，晶粒的择优取向为〈１１１〉；在 Ｓｉ３ Ｎ４ 膜上沉积的多晶硅薄膜，晶粒尺寸较小，晶粒致密，晶粒间基本无空隙，晶粒的择优取向为〈１００〉
Results of polycrystalline silicon thin film on SiO 2 and Si 3N 4 fabricated by RTCVD are reported.The columnar structure of the crystalline grains is very well recognizable for the films on SiO 2 and Si 3N 4.The microstructure and preferential grain orientation of the polycrystalline silicon films deposited directly on SiO 2 and Si 3N 4 are very different.There are many gaps among the grains for the film on SiO 2,but almost no any gaps for the film on Si 3N 4.The preferential grain orientation of silicon film on SiO 2 is 〈111〉,and that on Si 3N 4 is 〈100〉.
出处
《太阳能学报》
EI
CAS
CSCD
北大核心
1999年第3期298-301,共4页
Acta Energiae Solaris Sinica
关键词
多晶硅
薄膜
化学汽相沉积
衬底
太阳电池
polycrystalline silicon thin film,chemical vaper deposition,substrate
