文摘Y2002-63306-618 03094923英寸 InP 衬底上的0.1μm InGaAs/InAlAs/Inp 高电子迁移率晶体管毫米波集成电路可靠性=High relia-bility of 0.1μm InGaAs/InAlAs/InP HEMT MMICs on3-inch InP substrates[会,英]/Chou,Y.C.& Leung,D.//2001 IEEE International Confefence on IndiumPhosphjde and Related Materials.—618~621(E)