Si doped composite material was prepared by coating artificial graphite with the mixture of phenol resin and polysilicone and following with heat treatment at 1 050 ℃ in an argon gas atmosphere. The structure and cha...Si doped composite material was prepared by coating artificial graphite with the mixture of phenol resin and polysilicone and following with heat treatment at 1 050 ℃ in an argon gas atmosphere. The structure and characteristics of the composite carbon were determined by means of XRD, SEM, BET surface area and electrochemical measurements. The new carbon material has a disordered carbon/graphite composite structure, with silicon doped in the disordered carbon. Compared with the pristine graphite, the electrochemical performance is improved for the Si doped composite carbon with large reversible capacity of 312.6 mAh/g, high initial charge/discharge efficiency of 88.61%, and excellent cycle stability. The prototype batteries using the composite carbon as anode material have large discharge capacity of 845 mAh and high capacity retention ratio of 95.80% at the 200th cycle.展开更多
The effect of silicon doping on the residual stress of CVD diamond films is examined using both X-ray diffraction (XRD) analysis and Raman spectroscopy measurements. The examined Si-doped diamond films are deposited o...The effect of silicon doping on the residual stress of CVD diamond films is examined using both X-ray diffraction (XRD) analysis and Raman spectroscopy measurements. The examined Si-doped diamond films are deposited on WC-Co substrates in a home-made bias-enhanced HFCVD apparatus. Ethyl silicate (Si(OC2H5)4) is dissolved in acetone to obtain various Si/C mole ratio ranging from 0.1% to 1.4% in the reaction gas. Characterizations with SEM and XRD indicate increasing silicon concentration may result in grain size decreasing and diamond [110] texture becoming dominant. The residual stress values of as-deposited Si-doped diamond films are evaluated by both sin2ψ method, which measures the (220) diamond Bragg diffraction peaks using XRD, with ψ-values ranging from 0° to 45°, and Raman spectroscopy, which detects the diamond Raman peak shift from the natural diamond line at 1332 cm-1. The residual stress evolution on the silicon doping level estimated from the above two methods presents rather good agreements, exhibiting that all deposited Si-doped diamond films present compressive stress and the sample with Si/C mole ratio of 0.1% possesses the largest residual stress of ~1.75 GPa (Raman) or ~2.3 GPa (XRD). As the silicon doping level is up further, the residual stress reduces to a relative stable value around 1.3 GPa.展开更多
文摘Si doped composite material was prepared by coating artificial graphite with the mixture of phenol resin and polysilicone and following with heat treatment at 1 050 ℃ in an argon gas atmosphere. The structure and characteristics of the composite carbon were determined by means of XRD, SEM, BET surface area and electrochemical measurements. The new carbon material has a disordered carbon/graphite composite structure, with silicon doped in the disordered carbon. Compared with the pristine graphite, the electrochemical performance is improved for the Si doped composite carbon with large reversible capacity of 312.6 mAh/g, high initial charge/discharge efficiency of 88.61%, and excellent cycle stability. The prototype batteries using the composite carbon as anode material have large discharge capacity of 845 mAh and high capacity retention ratio of 95.80% at the 200th cycle.
基金Project (51005154) supported by the National Natural Science Foundation of ChinaProject (12CG11) supported by the Chenguang Program of Shanghai Municipal Education Commission, ChinaProject (201104271) supported by the China Postdoctoral Science Foundation
文摘The effect of silicon doping on the residual stress of CVD diamond films is examined using both X-ray diffraction (XRD) analysis and Raman spectroscopy measurements. The examined Si-doped diamond films are deposited on WC-Co substrates in a home-made bias-enhanced HFCVD apparatus. Ethyl silicate (Si(OC2H5)4) is dissolved in acetone to obtain various Si/C mole ratio ranging from 0.1% to 1.4% in the reaction gas. Characterizations with SEM and XRD indicate increasing silicon concentration may result in grain size decreasing and diamond [110] texture becoming dominant. The residual stress values of as-deposited Si-doped diamond films are evaluated by both sin2ψ method, which measures the (220) diamond Bragg diffraction peaks using XRD, with ψ-values ranging from 0° to 45°, and Raman spectroscopy, which detects the diamond Raman peak shift from the natural diamond line at 1332 cm-1. The residual stress evolution on the silicon doping level estimated from the above two methods presents rather good agreements, exhibiting that all deposited Si-doped diamond films present compressive stress and the sample with Si/C mole ratio of 0.1% possesses the largest residual stress of ~1.75 GPa (Raman) or ~2.3 GPa (XRD). As the silicon doping level is up further, the residual stress reduces to a relative stable value around 1.3 GPa.
