Hydrocarbon precursor such as methane has been widely used to grow graphene films and the methods of growing quality graphene films are dominated by thermal CVD （chemical vapor deposition） system. Graphene films gro...Hydrocarbon precursor such as methane has been widely used to grow graphene films and the methods of growing quality graphene films are dominated by thermal CVD （chemical vapor deposition） system. Graphene films grown by plasma process are generally highly defective which in turns degrade the quality of the films. Here, using a green precursor, camphor we demonstrate a simple and economical method to get high-quality graphene film on copper substrate by micro wave surface-wave plasma CVD at relatively low temperature 550℃. Graphene film grown using camphor shows superior quality than that of the film grown using methane. Results revealed that camphor precursor is a good alternative to hydrocarbon precursors for graphene research.展开更多
与微米金刚石薄膜不同,纳米金刚石薄膜表面平滑。因此,在摩擦学应用领域中,纳米金刚石薄膜是最理想的。本研究利用CH4/H2微波等离子体CVD工艺在纯钛上沉积出纳米金刚石薄膜和微米金刚石薄膜。采用的沉积条件为:沉积温度约为1173K;沉积...与微米金刚石薄膜不同,纳米金刚石薄膜表面平滑。因此,在摩擦学应用领域中,纳米金刚石薄膜是最理想的。本研究利用CH4/H2微波等离子体CVD工艺在纯钛上沉积出纳米金刚石薄膜和微米金刚石薄膜。采用的沉积条件为:沉积温度约为1173K;沉积压力为8.0kPa;CH4浓度在0.5 m o l%和5 m o l%之间变化;沉积时间则从4h到12h不等。金刚石薄膜表面用扫描电镜(SEM)观察。在激光拉曼光谱中,微米金刚石薄膜在1332cm-1处有sp3键碳的锐峰。1140cm-1附近的光谱带与纳米金刚石薄膜的特征有关。并用X射线衍射对金刚石薄膜进行了分析。X射线衍射花样证实,纳米金刚石薄膜存在(111)面和(220)面。金刚石薄膜的表面粗糙度随着CH4浓度的增加而减小。但是,甲烷浓度在2 m o l%与5 m o l%之间变化时,金刚石薄膜的表面粗糙度接近50nm。据证实,CH4浓度在2 m o l%和5 m o l%之间,利用CH4/H2微波等离子体CVD工艺可以沉积出纳米金刚石薄膜。展开更多
本文介绍了利用线形同轴耦合式微波等离子体CVD法在硬质合金微型钻头(微钻)上沉积金刚石涂层的初步实验结果。微型钻头的直径为0.5mm,其中WC晶粒的尺寸约为0.5μm。在沉积前,先用Murakam i溶液(10gKOH+10gK3[Fe(CN)6]+100m l H2O)对微...本文介绍了利用线形同轴耦合式微波等离子体CVD法在硬质合金微型钻头(微钻)上沉积金刚石涂层的初步实验结果。微型钻头的直径为0.5mm,其中WC晶粒的尺寸约为0.5μm。在沉积前,先用Murakam i溶液(10gKOH+10gK3[Fe(CN)6]+100m l H2O)对微钻刻蚀10m in,使其表面粗化,然后用硫酸-双氧水溶液(10m l98wt%H2SO4+100m l 38%m/vH2O2)对其浸蚀60 s,以去除其表面的Co。在金刚石涂层过程中发现,由于微钻尖端在微波电磁场中产生较集中的辉光放电现象,因而在微钻尖端很难获得金刚石涂层。针对这种金刚石涂层过程中的“尖端效应”,尝试使用了金属丝屏蔽的方法以改变微钻周围的微波电磁场分布,克服了上述金刚石涂层过程中的“尖端效应”,首次成功地采用微波等离子体CVD法在微钻上沉积了厚度为1.5μm的金刚石涂层。展开更多
文摘Hydrocarbon precursor such as methane has been widely used to grow graphene films and the methods of growing quality graphene films are dominated by thermal CVD （chemical vapor deposition） system. Graphene films grown by plasma process are generally highly defective which in turns degrade the quality of the films. Here, using a green precursor, camphor we demonstrate a simple and economical method to get high-quality graphene film on copper substrate by micro wave surface-wave plasma CVD at relatively low temperature 550℃. Graphene film grown using camphor shows superior quality than that of the film grown using methane. Results revealed that camphor precursor is a good alternative to hydrocarbon precursors for graphene research.
文摘与微米金刚石薄膜不同,纳米金刚石薄膜表面平滑。因此,在摩擦学应用领域中,纳米金刚石薄膜是最理想的。本研究利用CH4/H2微波等离子体CVD工艺在纯钛上沉积出纳米金刚石薄膜和微米金刚石薄膜。采用的沉积条件为:沉积温度约为1173K;沉积压力为8.0kPa;CH4浓度在0.5 m o l%和5 m o l%之间变化;沉积时间则从4h到12h不等。金刚石薄膜表面用扫描电镜(SEM)观察。在激光拉曼光谱中,微米金刚石薄膜在1332cm-1处有sp3键碳的锐峰。1140cm-1附近的光谱带与纳米金刚石薄膜的特征有关。并用X射线衍射对金刚石薄膜进行了分析。X射线衍射花样证实,纳米金刚石薄膜存在(111)面和(220)面。金刚石薄膜的表面粗糙度随着CH4浓度的增加而减小。但是,甲烷浓度在2 m o l%与5 m o l%之间变化时,金刚石薄膜的表面粗糙度接近50nm。据证实,CH4浓度在2 m o l%和5 m o l%之间,利用CH4/H2微波等离子体CVD工艺可以沉积出纳米金刚石薄膜。
文摘本文介绍了利用线形同轴耦合式微波等离子体CVD法在硬质合金微型钻头(微钻)上沉积金刚石涂层的初步实验结果。微型钻头的直径为0.5mm,其中WC晶粒的尺寸约为0.5μm。在沉积前,先用Murakam i溶液(10gKOH+10gK3[Fe(CN)6]+100m l H2O)对微钻刻蚀10m in,使其表面粗化,然后用硫酸-双氧水溶液(10m l98wt%H2SO4+100m l 38%m/vH2O2)对其浸蚀60 s,以去除其表面的Co。在金刚石涂层过程中发现,由于微钻尖端在微波电磁场中产生较集中的辉光放电现象,因而在微钻尖端很难获得金刚石涂层。针对这种金刚石涂层过程中的“尖端效应”,尝试使用了金属丝屏蔽的方法以改变微钻周围的微波电磁场分布,克服了上述金刚石涂层过程中的“尖端效应”,首次成功地采用微波等离子体CVD法在微钻上沉积了厚度为1.5μm的金刚石涂层。
