本文研究开尔文探针力显微镜(KPFM)中多频率方法的实现。KPFM中的多频率方法同时激发微悬臂探针的第一次和第二次的本征机械振动模式并分别用于样品形貌和表面电势成像。据此,本文设计了一种基于传统比例-积分控制器基本原理的模拟式反...本文研究开尔文探针力显微镜(KPFM)中多频率方法的实现。KPFM中的多频率方法同时激发微悬臂探针的第一次和第二次的本征机械振动模式并分别用于样品形貌和表面电势成像。据此,本文设计了一种基于传统比例-积分控制器基本原理的模拟式反馈控制器,用以实现探针的调控。测试表明,该反馈控制器带宽可达约5 k Hz,并利用该反馈控制器研制出了多频率KPFM,其电势测量灵敏度优于5 m V。利用该多频率KPFM,对注入电荷后的介电薄膜样品进行测试,一次成像即可得到样品的形貌图及局域电势的二维分布图。该多频率KPFM技术可广泛应用于电子材料与器件的电特性表征。展开更多
Two-dimensional transition metal dichalcogenides heterostructures have stimulated wide in- terest not only for the fundamental research, but also for the application of next generation electronic and optoelectronic de...Two-dimensional transition metal dichalcogenides heterostructures have stimulated wide in- terest not only for the fundamental research, but also for the application of next generation electronic and optoelectronic devices. Herein, we report a successful two-step chemical vapor deposition strategy to construct vertically stacked van der Waals epitaxial In2Se3/MoSe2 heterostructures. Transmission electron microscopy characterization reveals clearly that the In2Se3 has well-aligned lattice orientation with the substrate of monolayer MoSe2. Due to the interaction between the In2Se3 and MoSe2 layers, the heterostructure shows the quench- ing and red-shift of photoluminescence. Moreover, the current rectification behavior and photovoltaic effect can be observed from the heterostructure, which is attributed to the unique band structure alignment of the heterostructure, and is further confirmed by Kevin probe force microscopy measurement. The synthesis approach via van der Waals epitaxy in this work can expand the way to fabricate a variety of two-dimensional heterostructures for potential applications in electronic and optoelectronic devices.展开更多
文摘本文研究开尔文探针力显微镜(KPFM)中多频率方法的实现。KPFM中的多频率方法同时激发微悬臂探针的第一次和第二次的本征机械振动模式并分别用于样品形貌和表面电势成像。据此,本文设计了一种基于传统比例-积分控制器基本原理的模拟式反馈控制器,用以实现探针的调控。测试表明,该反馈控制器带宽可达约5 k Hz,并利用该反馈控制器研制出了多频率KPFM,其电势测量灵敏度优于5 m V。利用该多频率KPFM,对注入电荷后的介电薄膜样品进行测试,一次成像即可得到样品的形貌图及局域电势的二维分布图。该多频率KPFM技术可广泛应用于电子材料与器件的电特性表征。
文摘Two-dimensional transition metal dichalcogenides heterostructures have stimulated wide in- terest not only for the fundamental research, but also for the application of next generation electronic and optoelectronic devices. Herein, we report a successful two-step chemical vapor deposition strategy to construct vertically stacked van der Waals epitaxial In2Se3/MoSe2 heterostructures. Transmission electron microscopy characterization reveals clearly that the In2Se3 has well-aligned lattice orientation with the substrate of monolayer MoSe2. Due to the interaction between the In2Se3 and MoSe2 layers, the heterostructure shows the quench- ing and red-shift of photoluminescence. Moreover, the current rectification behavior and photovoltaic effect can be observed from the heterostructure, which is attributed to the unique band structure alignment of the heterostructure, and is further confirmed by Kevin probe force microscopy measurement. The synthesis approach via van der Waals epitaxy in this work can expand the way to fabricate a variety of two-dimensional heterostructures for potential applications in electronic and optoelectronic devices.
