A 1×8 multimode interference power splitter with multimode input/output waveguides in SOI material is designed by the beam propagation method and fabricated by the inductive coupled plasma etching technology for...A 1×8 multimode interference power splitter with multimode input/output waveguides in SOI material is designed by the beam propagation method and fabricated by the inductive coupled plasma etching technology for use in fiber optics communication systems.The fabricated device exhibits low loss and good coupling uniformity.The excess loss is lower than 0 8dB,and the uniformity is 0 45dB at the wavelength of 1550nm.Moreover,the polarization dependent loss is lower than 0 7dB at 1550nm.The device size is only 2mm×10mm.展开更多
随着信息技术的发展,市场对于更小型化、更高效光器件的需求不断增加.采用互补金属氧化物半导体(complementary metal oxide semiconductor,CMOS)工艺,成功制备了Si_(3)N_(4)光功率分束器并对其进行测试.结果表明,在1550 nm波长下,边缘...随着信息技术的发展,市场对于更小型化、更高效光器件的需求不断增加.采用互补金属氧化物半导体(complementary metal oxide semiconductor,CMOS)工艺,成功制备了Si_(3)N_(4)光功率分束器并对其进行测试.结果表明,在1550 nm波长下,边缘优化的1×8功率分束器的总损耗仅为1.30 dB,且其体积相较于传统设计可减小30%.本研究应用逆向优化算法,突破了传统设计仅能针对规则图形设计的限制,为实现小尺寸、低损耗的光功率分束器提供了一种可行途径.展开更多
文摘A 1×8 multimode interference power splitter with multimode input/output waveguides in SOI material is designed by the beam propagation method and fabricated by the inductive coupled plasma etching technology for use in fiber optics communication systems.The fabricated device exhibits low loss and good coupling uniformity.The excess loss is lower than 0 8dB,and the uniformity is 0 45dB at the wavelength of 1550nm.Moreover,the polarization dependent loss is lower than 0 7dB at 1550nm.The device size is only 2mm×10mm.
