The problem of vibration isolation by rectangular open trenches in a plane strain context is numerically studied using a finite element code, PLAXIS. The soil media is assumed to be linear elastic, isotropic, and homo...The problem of vibration isolation by rectangular open trenches in a plane strain context is numerically studied using a finite element code, PLAXIS. The soil media is assumed to be linear elastic, isotropic, and homogeneous subjected to a vertical harmonic load producing steady-state vibration. The present model is validated by comparing it with previously published works. The key geometrical features of a trench, i.e., its depth, width, and distance from the source of excitation, are normalized with respect to the Rayleigh wavelength. The attenuation of vertical and horizontal components of vibration is studied for various trench dimensions against trench locations varied from an active to a passive case. Results are depicted in non-dimensional forms and conclusions are drawn regarding the effects of geometrical parameters in attenuating vertical and horizontal vibration components. The screening efficiency is primarily governed by the normalized depth of the barrier. The effect of width has little significance except in some specific cases. Simplified regression models are developed to estimate average amplitude reduction factors. The models applicable to vertical vibration cases are found to be in excellent agreement with previously published results.展开更多
A novel trench MOS barrier Schottky diode（TMBS） device with a high-k material introduced into the gate insulator is reported, which is named high-k TMBS. By simulation with Medici, it is found that the high-k TMBS c...A novel trench MOS barrier Schottky diode（TMBS） device with a high-k material introduced into the gate insulator is reported, which is named high-k TMBS. By simulation with Medici, it is found that the high-k TMBS can have 19.8% lower leakage current while maintaining the same breakdown voltage and forward turn-on voltage compared with the conventional regular trench TMBS.展开更多
A novel ultralow turnoff loss dual-gate silicon-on-insulator （SOI） lateral insulated gate bipolar transistor （LIGBT） is proposed. The proposed SOI LIGBT features an extra trench gate inserted between the p-well an...A novel ultralow turnoff loss dual-gate silicon-on-insulator （SOI） lateral insulated gate bipolar transistor （LIGBT） is proposed. The proposed SOI LIGBT features an extra trench gate inserted between the p-well and n-drift, and an n-type carrier stored （CS） layer beneath the p-well. In the on-state, the extra trench gate acts as a barrier, which increases the cartier density at the cathode side of n-drift region, resulting in a decrease of the on-state voltage drop （Von）. In the off-state, due to the uniform carder distribution and the assisted depletion effect induced by the extra trench gate, large number of carriers can be removed at the initial turnoff process, contributing to a low turnoff loss （Eoff）. Moreover, owing to the dual-gate field plates and CS layer, the carrier density beneath the p-well can greatly increase, which further improves the tradeoff between Eoff and Von. Simulation results show that Eoff of the proposed SOI LIGBT can decrease by 77% compared with the conventional trench gate SOI LIGBT at the same Von of 1.1 V.展开更多
文摘The problem of vibration isolation by rectangular open trenches in a plane strain context is numerically studied using a finite element code, PLAXIS. The soil media is assumed to be linear elastic, isotropic, and homogeneous subjected to a vertical harmonic load producing steady-state vibration. The present model is validated by comparing it with previously published works. The key geometrical features of a trench, i.e., its depth, width, and distance from the source of excitation, are normalized with respect to the Rayleigh wavelength. The attenuation of vertical and horizontal components of vibration is studied for various trench dimensions against trench locations varied from an active to a passive case. Results are depicted in non-dimensional forms and conclusions are drawn regarding the effects of geometrical parameters in attenuating vertical and horizontal vibration components. The screening efficiency is primarily governed by the normalized depth of the barrier. The effect of width has little significance except in some specific cases. Simplified regression models are developed to estimate average amplitude reduction factors. The models applicable to vertical vibration cases are found to be in excellent agreement with previously published results.
基金Project supported by the National Basic Research Program of China(Grant No.2011CBA00607)the National Natural Science Foundation of China(Grant Nos.61106089 and 61376097)the Zhejiang Provincial Natural Science Foundation of China(Grant No.LR14F040001)
文摘A novel trench MOS barrier Schottky diode（TMBS） device with a high-k material introduced into the gate insulator is reported, which is named high-k TMBS. By simulation with Medici, it is found that the high-k TMBS can have 19.8% lower leakage current while maintaining the same breakdown voltage and forward turn-on voltage compared with the conventional regular trench TMBS.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61376080 and 61674027)the Natural Science Foundation of Guangdong Province,China(Grant Nos.2014A030313736 and 2016A030311022)
文摘A novel ultralow turnoff loss dual-gate silicon-on-insulator （SOI） lateral insulated gate bipolar transistor （LIGBT） is proposed. The proposed SOI LIGBT features an extra trench gate inserted between the p-well and n-drift, and an n-type carrier stored （CS） layer beneath the p-well. In the on-state, the extra trench gate acts as a barrier, which increases the cartier density at the cathode side of n-drift region, resulting in a decrease of the on-state voltage drop （Von）. In the off-state, due to the uniform carder distribution and the assisted depletion effect induced by the extra trench gate, large number of carriers can be removed at the initial turnoff process, contributing to a low turnoff loss （Eoff）. Moreover, owing to the dual-gate field plates and CS layer, the carrier density beneath the p-well can greatly increase, which further improves the tradeoff between Eoff and Von. Simulation results show that Eoff of the proposed SOI LIGBT can decrease by 77% compared with the conventional trench gate SOI LIGBT at the same Von of 1.1 V.
