Since the successful fabrication of two-dimensional(2D)tellurium(Te)in 2017,its fascinating properties including a thickness dependence bandgap,environmental stability,piezoelectric effect,high carrier mobility,and ph...Since the successful fabrication of two-dimensional(2D)tellurium(Te)in 2017,its fascinating properties including a thickness dependence bandgap,environmental stability,piezoelectric effect,high carrier mobility,and photoresponse among others show great potential for various applications.These include photodetectors,field-effect transistors,piezoelectric devices,modulators,and energy harvesting devices.However,as a new member of the 2D material family,much less known is about 2D Te compared to other 2D materials.Motivated by this lack of knowledge,we review the recent progress of research into 2D Te nanoflakes.Firstly,we introduce the background and motivation of this review.Then,the crystal structures and synthesis methods are presented,followed by an introduction to their physical properties and applications.Finally,the challenges and further development directions are summarized.We believe that milestone investigations of 2D Te nanoflakes will emerge soon,which will bring about great industrial revelations in 2D materials-based nanodevice commercialization.展开更多
In this Letter, new concepts of fluorescence phase-change materials and fluorescence phase-change multilevel recording are proposed. High-contrast fluorescence between the amorphous and crystalline states is achieved ...In this Letter, new concepts of fluorescence phase-change materials and fluorescence phase-change multilevel recording are proposed. High-contrast fluorescence between the amorphous and crystalline states is achieved in nickel- or bismuth-doped Ge;Sb;Te;phase-change memory thin films. Opposite phase-selective fluorescence effects are observed when different doping ions are used. The fluorescence intensity is sensitive to the crystallization degree of the films. This characteristic can be applied in reconfigurable multi-state memory and other logic devices. It also has likely applications in display and data visualization.展开更多
基金supported by the National Natural Science Fund of China(Grant Nos.61875138,61435010,and 61961136001)Science and Technology Innovation Commission of Shenzhen(KQJSCX20180328095501798,JCYJ20180507182047316,KQTD2015032416270385,JCYJ20170811093453105,JCYJ20180307164612205 and GJHZ20180928160209731)+1 种基金Natural Science Foundation of Guangdong Province for Distinguished Young Scholars(2018B030306038)Natural Science Foundation of SZU(No.860-000002110429).
文摘Since the successful fabrication of two-dimensional(2D)tellurium(Te)in 2017,its fascinating properties including a thickness dependence bandgap,environmental stability,piezoelectric effect,high carrier mobility,and photoresponse among others show great potential for various applications.These include photodetectors,field-effect transistors,piezoelectric devices,modulators,and energy harvesting devices.However,as a new member of the 2D material family,much less known is about 2D Te compared to other 2D materials.Motivated by this lack of knowledge,we review the recent progress of research into 2D Te nanoflakes.Firstly,we introduce the background and motivation of this review.Then,the crystal structures and synthesis methods are presented,followed by an introduction to their physical properties and applications.Finally,the challenges and further development directions are summarized.We believe that milestone investigations of 2D Te nanoflakes will emerge soon,which will bring about great industrial revelations in 2D materials-based nanodevice commercialization.
基金partially supported by the National Natural Science Foundation of China(Nos.61178059,51472258,and 61137002)the National Basic Research Program of China(No.2013CBA01900)
文摘In this Letter, new concepts of fluorescence phase-change materials and fluorescence phase-change multilevel recording are proposed. High-contrast fluorescence between the amorphous and crystalline states is achieved in nickel- or bismuth-doped Ge;Sb;Te;phase-change memory thin films. Opposite phase-selective fluorescence effects are observed when different doping ions are used. The fluorescence intensity is sensitive to the crystallization degree of the films. This characteristic can be applied in reconfigurable multi-state memory and other logic devices. It also has likely applications in display and data visualization.
