The static avalanche breakdown behavior of 4.5 kV high-voltage IGBT is studied by theory analysis and experiment. The avalanche breakdown behaviors of the 4.5 kV IGBTs with different backside structures are investigat...The static avalanche breakdown behavior of 4.5 kV high-voltage IGBT is studied by theory analysis and experiment. The avalanche breakdown behaviors of the 4.5 kV IGBTs with different backside structures are investigated and compared by using the curve tracer. The results show that the snap back behavior of the breakdown waveform is related to the bipolar PNP gain, which leads to the deterioration of the breakdown voltage. There are two ways to optimize the backside structure, one is increasing the implant dose of the N^＋ buffer layer, the other is decreasing the implant dose of the P^＋ collector layer. It is found that the optimized structure is effective in suppressing the snap back behavior and improving the breakdown characteristic of high voltage IGBT.展开更多
Nonlinear solution of reinforced concrete structures, particularly complete load-deflection response, requires tracing of the equilibrium path and proper treatment of the limit and bifurcation points. In this regard, ...Nonlinear solution of reinforced concrete structures, particularly complete load-deflection response, requires tracing of the equilibrium path and proper treatment of the limit and bifurcation points. In this regard, ordinary solution techniques lead to instability near the limit points and also have problems in case of snap-through and snap-back. Thus they fail to predict the complete load-displacement response. The arc-length method serves the purpose well in principle, received wide acceptance in finite element analysis, and has been used extensively. However modifications to the basic idea are vital to meet the particular needs of the analysis. This paper reviews some of the recent developments of the method in the last two decades, with particular emphasis on nonlinear finite element analysis of reinforced concrete structures.展开更多
The RC-IGBT（reverse conducting insulated gate bipolar transistor） is a new kind of power semiconductor device which has many advantages such as smaller chip size,higher power density,lower manufacturing cost,softer ...The RC-IGBT（reverse conducting insulated gate bipolar transistor） is a new kind of power semiconductor device which has many advantages such as smaller chip size,higher power density,lower manufacturing cost,softer turn off behavior,and better reliability.However,its performance has a number of drawbacks,such as the snap-back effect.In this paper,an introduction about the snap-back effect of the RC-IGBT is given firstly. Then the physical explanations are presented with two simplified models.After that,some numerical simulations are carried out to verify the correctness of the models.展开更多
A simple equivalent circuit model is proposed according to the device structure of reverse conducting insulated gate bipolar transistors （RC-IGBT）. Mathematical derivation and circuit simulations indicate that this ...A simple equivalent circuit model is proposed according to the device structure of reverse conducting insulated gate bipolar transistors （RC-IGBT）. Mathematical derivation and circuit simulations indicate that this model can explain the snap-back effect （including primary snap-back effect, secondary snap-back effect, and reverse snap-back effect） and hysteresis effect perfectly.展开更多
The chaotic behavior of one-dimensional, 2-segment and 3-segmentpiecewise-linear maps is examined by using the concept of snap-back repellers introduced by Marottoand the parameters conditions of existence for snap-ba...The chaotic behavior of one-dimensional, 2-segment and 3-segmentpiecewise-linear maps is examined by using the concept of snap-back repellers introduced by Marottoand the parameters conditions of existence for snap-back repeller are obtained. Simulation resultsare presented to show the snap-back repeller, some periodic points and attracting interval cycleswith chaotic intervals.展开更多
基金Project supported by the National Major Science and Technology Special Project of China(No.2011ZX02503-003)
文摘The static avalanche breakdown behavior of 4.5 kV high-voltage IGBT is studied by theory analysis and experiment. The avalanche breakdown behaviors of the 4.5 kV IGBTs with different backside structures are investigated and compared by using the curve tracer. The results show that the snap back behavior of the breakdown waveform is related to the bipolar PNP gain, which leads to the deterioration of the breakdown voltage. There are two ways to optimize the backside structure, one is increasing the implant dose of the N^＋ buffer layer, the other is decreasing the implant dose of the P^＋ collector layer. It is found that the optimized structure is effective in suppressing the snap back behavior and improving the breakdown characteristic of high voltage IGBT.
文摘Nonlinear solution of reinforced concrete structures, particularly complete load-deflection response, requires tracing of the equilibrium path and proper treatment of the limit and bifurcation points. In this regard, ordinary solution techniques lead to instability near the limit points and also have problems in case of snap-through and snap-back. Thus they fail to predict the complete load-displacement response. The arc-length method serves the purpose well in principle, received wide acceptance in finite element analysis, and has been used extensively. However modifications to the basic idea are vital to meet the particular needs of the analysis. This paper reviews some of the recent developments of the method in the last two decades, with particular emphasis on nonlinear finite element analysis of reinforced concrete structures.
基金Project supported by the National Major Science and Technology Special Project of China(No.2011ZX02504-002)
文摘The RC-IGBT（reverse conducting insulated gate bipolar transistor） is a new kind of power semiconductor device which has many advantages such as smaller chip size,higher power density,lower manufacturing cost,softer turn off behavior,and better reliability.However,its performance has a number of drawbacks,such as the snap-back effect.In this paper,an introduction about the snap-back effect of the RC-IGBT is given firstly. Then the physical explanations are presented with two simplified models.After that,some numerical simulations are carried out to verify the correctness of the models.
基金Project supported by the National Major Science and Technology Special Project of China(No.2011ZX02504-002)the Director Fund Project of Institute of Microelectronics of Chinese Academy of Sciences(No.Y1GZ241s01)
文摘A simple equivalent circuit model is proposed according to the device structure of reverse conducting insulated gate bipolar transistors （RC-IGBT）. Mathematical derivation and circuit simulations indicate that this model can explain the snap-back effect （including primary snap-back effect, secondary snap-back effect, and reverse snap-back effect） and hysteresis effect perfectly.
基金supported by the National Natural Science Foundation of China(Grant Nos.11972290 and 11872303)the Natural Science Foundation of Shaanxi Province of China(Grant No.2020JM-105).
基金Supported by the National Natural Science Foundation of China "Tian Yuan" (A0324626)
文摘The chaotic behavior of one-dimensional, 2-segment and 3-segmentpiecewise-linear maps is examined by using the concept of snap-back repellers introduced by Marottoand the parameters conditions of existence for snap-back repeller are obtained. Simulation resultsare presented to show the snap-back repeller, some periodic points and attracting interval cycleswith chaotic intervals.
