摘要
A simple equivalent circuit model is proposed according to the device structure of reverse conducting insulated gate bipolar transistors (RC-IGBT). Mathematical derivation and circuit simulations indicate that this model can explain the snap-back effect (including primary snap-back effect, secondary snap-back effect, and reverse snap-back effect) and hysteresis effect perfectly.
A simple equivalent circuit model is proposed according to the device structure of reverse conducting insulated gate bipolar transistors (RC-IGBT). Mathematical derivation and circuit simulations indicate that this model can explain the snap-back effect (including primary snap-back effect, secondary snap-back effect, and reverse snap-back effect) and hysteresis effect perfectly.
基金
Project supported by the National Major Science and Technology Special Project of China(No.2011ZX02504-002)
the Director Fund Project of Institute of Microelectronics of Chinese Academy of Sciences(No.Y1GZ241s01)