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The negative differential resistance characteristics of an RC-IGBT and its equivalent circuit model 被引量:3

The negative differential resistance characteristics of an RC-IGBT and its equivalent circuit model
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摘要 A simple equivalent circuit model is proposed according to the device structure of reverse conducting insulated gate bipolar transistors (RC-IGBT). Mathematical derivation and circuit simulations indicate that this model can explain the snap-back effect (including primary snap-back effect, secondary snap-back effect, and reverse snap-back effect) and hysteresis effect perfectly. A simple equivalent circuit model is proposed according to the device structure of reverse conducting insulated gate bipolar transistors (RC-IGBT). Mathematical derivation and circuit simulations indicate that this model can explain the snap-back effect (including primary snap-back effect, secondary snap-back effect, and reverse snap-back effect) and hysteresis effect perfectly.
出处 《Journal of Semiconductors》 EI CAS CSCD 2014年第2期62-66,共5页 半导体学报(英文版)
基金 Project supported by the National Major Science and Technology Special Project of China(No.2011ZX02504-002) the Director Fund Project of Institute of Microelectronics of Chinese Academy of Sciences(No.Y1GZ241s01)
关键词 RC-IGBT snap-back effect hysteresis effect RC-IGBT snap-back effect hysteresis effect
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