The hydrogen ion implantation process in Smart-Cut technology is investigated in the present paper using molecular dynamics（MD） simulations.This work focuses on the effects of the implantation energy,dose of hydroge...The hydrogen ion implantation process in Smart-Cut technology is investigated in the present paper using molecular dynamics（MD） simulations.This work focuses on the effects of the implantation energy,dose of hydrogen ions and implantation temperature on the distribution of hydrogen ions and defect rate induced by ion implantation.Numerical analysis shows that implanted hydrogen ions follow an approximate Gaussian distribution which mainly depends on the implantation energy and is independent of the hydrogen ion dose and implantation temperature.By introducing a new parameter of defect rate,the influence of the processing parameters on defect rate is also quantitatively examined.展开更多
In the present paper, continuum fracture mechanics is used to analyze the Smart-Cut process, a recently established ion cut technology which enables highly efficient fabrication of various silicon-on-insulator （SOI）...In the present paper, continuum fracture mechanics is used to analyze the Smart-Cut process, a recently established ion cut technology which enables highly efficient fabrication of various silicon-on-insulator （SOI） wafers of high uniformity in thickness. Using integral transform and Cauchy singular integral equation methods, the mode-I and mode-II stress intensity factors, energy release rate, and crack opening displacements are derived in order to examine several important fracture mechanisms involved in the Smart-Cut process. The effects of defect interaction and stiffening wafer on defect growth are investigated. The numerical results indi- cate that a stiffener/handle wafer can effectively prevent the donor wafer from blistering and exfoliation, but it slows down the defect growth by decreasing the magnitudes of SIF＇s. Defect interaction also plays an important role in the splitting process of SOI wafers, but its contribution depends strongly on the size, interval and internal pressure of defects. Finally, an analytical formula is derived to estimate the implantation dose required for splitting a SOI wafer.展开更多
In Part 2 of the paper on the Smart-Cut process, the effects of bonding flaws characterized by the size and internal pressure before and after splitting are studied by using fracture mechanics models. It is found that...In Part 2 of the paper on the Smart-Cut process, the effects of bonding flaws characterized by the size and internal pressure before and after splitting are studied by using fracture mechanics models. It is found that the bonding flaws with large size are prone to cause severe deviation of defect growth, leading to a non-transferred area of thin layer when splitting. In a practical Smart-Cut process where the internal pressure of bonding flaws is very small, large interfacial defects always promote defect growth in the splitting process. Meanwhile, increasing the internal pressure of the bonding flaws decreases the defect growth and its deviation before splitting. The mechanism of relaxation of stiffener constraint is proposed to clarify the effect of bonding flaws. Moreover, the progress of the splitting process is analyzed when bonding flaws are present. After splitting, those bonding flaws with large size and high internal pressure are vulnerable for the blistering of the thin film during high-temperature annealing.展开更多
Defect evolution in a single crystal silicon which is implanted with hydrogen atoms and then annealed is investigated in the present paper by means of molecular dynamics simulation. By introducing defect density based...Defect evolution in a single crystal silicon which is implanted with hydrogen atoms and then annealed is investigated in the present paper by means of molecular dynamics simulation. By introducing defect density based on statistical average, this work aims to quantitatively examine defect nucleation and growth at nanoscale during annealing in Smart-Cut technology. Research focus is put on the effects of the implantation energy, hydrogen implantation dose and annealing temperature on defect density in the statistical region. It is found that most de- fects nucleate and grow at the annealing stage, and that defect density increases with the increase of the annealing temperature and the decrease of the hydrogen implantation dose. In addition, the enhancement and the impediment effects of stress field on defect density in the annealing process are discussed.展开更多
A thermodynamic model of hydrogen induced silicon surface layer splitting with the help of an oxidized silicon wafer bonded is proposed.Wafer splitting is the result of lateral growth of hydrogen blisters in the enti...A thermodynamic model of hydrogen induced silicon surface layer splitting with the help of an oxidized silicon wafer bonded is proposed.Wafer splitting is the result of lateral growth of hydrogen blisters in the entire implanted hydrogen region during annealing.The blister growth rate depends on the effective activation energies of both hydrogen complex dissociation and hydrogen diffusion.The hydrogen blister radius was studied as the function of annealing time,annealing temperature and implantation dose.The critical radius was obtained according to the Griffith energy condition.The time required for wafer splitting at the cut temperature was calculated in accordance with the growth of hydrogen blisters.展开更多
基金Project supported by the National Natural Science Foundation of China(No.11372261)the Excellent Young Scientists Supporting Project of Science and Technology Department of Sichuan Province(No.2013JQ0030)+3 种基金the Supporting Project of Department of Education of Sichuan Province(No.2014zd3132)the Opening Project of Key Laboratory of Testing Technology for Manufacturing Process,Southwest University of Science and Technology-Ministry of Education(No.12zxzk02)the Fund of Doctoral Research of Southwest University of Science and Technology(No.12zx7106)the Postgraduate Innovation Fund Project of Southwest University of Science and Technology(No.14ycxjj0121)
文摘The hydrogen ion implantation process in Smart-Cut technology is investigated in the present paper using molecular dynamics（MD） simulations.This work focuses on the effects of the implantation energy,dose of hydrogen ions and implantation temperature on the distribution of hydrogen ions and defect rate induced by ion implantation.Numerical analysis shows that implanted hydrogen ions follow an approximate Gaussian distribution which mainly depends on the implantation energy and is independent of the hydrogen ion dose and implantation temperature.By introducing a new parameter of defect rate,the influence of the processing parameters on defect rate is also quantitatively examined.
基金the Australian Research Council (ARC),the National Natural Science Foundation of China (10525210 and 10732050) 973 Project (2004CB619303)
文摘In the present paper, continuum fracture mechanics is used to analyze the Smart-Cut process, a recently established ion cut technology which enables highly efficient fabrication of various silicon-on-insulator （SOI） wafers of high uniformity in thickness. Using integral transform and Cauchy singular integral equation methods, the mode-I and mode-II stress intensity factors, energy release rate, and crack opening displacements are derived in order to examine several important fracture mechanisms involved in the Smart-Cut process. The effects of defect interaction and stiffening wafer on defect growth are investigated. The numerical results indi- cate that a stiffener/handle wafer can effectively prevent the donor wafer from blistering and exfoliation, but it slows down the defect growth by decreasing the magnitudes of SIF＇s. Defect interaction also plays an important role in the splitting process of SOI wafers, but its contribution depends strongly on the size, interval and internal pressure of defects. Finally, an analytical formula is derived to estimate the implantation dose required for splitting a SOI wafer.
基金supported by the Australian Research Council (ARC), the National Natural Science Foundation of China (10525210 and 10732050) 973 Project (2004CB619303)
文摘In Part 2 of the paper on the Smart-Cut process, the effects of bonding flaws characterized by the size and internal pressure before and after splitting are studied by using fracture mechanics models. It is found that the bonding flaws with large size are prone to cause severe deviation of defect growth, leading to a non-transferred area of thin layer when splitting. In a practical Smart-Cut process where the internal pressure of bonding flaws is very small, large interfacial defects always promote defect growth in the splitting process. Meanwhile, increasing the internal pressure of the bonding flaws decreases the defect growth and its deviation before splitting. The mechanism of relaxation of stiffener constraint is proposed to clarify the effect of bonding flaws. Moreover, the progress of the splitting process is analyzed when bonding flaws are present. After splitting, those bonding flaws with large size and high internal pressure are vulnerable for the blistering of the thin film during high-temperature annealing.
基金Project supported by the National Natural Science Foundation of China(No.11372261)the Excellent Young Scientists Supporting Project of Science and Technology Department of Sichuan Province(No.2013JQ0030)+3 种基金the Supporting Project of Department of Education of Sichuan Province(No.2014zd3132)the Opening Project of Key Laboratory of Testing Technology for Manufacturing Process,Southwest University of Science and Technology-Ministry of Education(No.12zxzk02)the Fund of Doctoral Research of Southwest University of Science and Technology(No.12zx7106)the Postgraduate Innovation Fund Project of Southwest University of Science and Technology(No.14ycxjj0121)
文摘Defect evolution in a single crystal silicon which is implanted with hydrogen atoms and then annealed is investigated in the present paper by means of molecular dynamics simulation. By introducing defect density based on statistical average, this work aims to quantitatively examine defect nucleation and growth at nanoscale during annealing in Smart-Cut technology. Research focus is put on the effects of the implantation energy, hydrogen implantation dose and annealing temperature on defect density in the statistical region. It is found that most de- fects nucleate and grow at the annealing stage, and that defect density increases with the increase of the annealing temperature and the decrease of the hydrogen implantation dose. In addition, the enhancement and the impediment effects of stress field on defect density in the annealing process are discussed.
文摘A thermodynamic model of hydrogen induced silicon surface layer splitting with the help of an oxidized silicon wafer bonded is proposed.Wafer splitting is the result of lateral growth of hydrogen blisters in the entire implanted hydrogen region during annealing.The blister growth rate depends on the effective activation energies of both hydrogen complex dissociation and hydrogen diffusion.The hydrogen blister radius was studied as the function of annealing time,annealing temperature and implantation dose.The critical radius was obtained according to the Griffith energy condition.The time required for wafer splitting at the cut temperature was calculated in accordance with the growth of hydrogen blisters.
