Silicon carbide(SiC),a group IV compound and wide-bandgap semiconductor for high-power,high-frequency and high-temperature devices,demonstrates excellent inherent properties for power devices and specialized high-end ...Silicon carbide(SiC),a group IV compound and wide-bandgap semiconductor for high-power,high-frequency and high-temperature devices,demonstrates excellent inherent properties for power devices and specialized high-end markets.Solution growth is thermodynamically favorable for producing SiC single crystal ingots with ultra-low dislocation density as the crystallization is driven by the supersaturation of carbon dissolved in Si-metal solvents.Meanwhile,solution growth is conducive to the growth of both N-and P-type SiC,with doping concentrations ranging from 10^(14)to 10^(19)cm^(-3).To date,4-inch 4H-SiC substrates with a thickness of 15 mm produced by solution growth have been unveiled,while substrates of 6 inches and above are still under development.Based on top-seeded solution growth(TSSG),several growth techniques have been developed including solution growth on a concave surface(SGCS),melt-back,accelerated crucible rotation technique(ACRT),two-step growth,and facet growth.Multi-parameters of the solution growth including meniscus,solvent design,flow control,dislocation conversion,facet growth,and structures of graphite components make high-quality single crystal growth possible.In this paper,the solution growth techniques and corresponding parameters involved in SiC bulk growth were reviewed.展开更多
The self-assembled silicon substrate. The resultant contact angle meter and atomic method was introduced to successfully obtain film was characterized by means of X-ray rare earth（RE） nanofilm on a single-crystal ph...The self-assembled silicon substrate. The resultant contact angle meter and atomic method was introduced to successfully obtain film was characterized by means of X-ray rare earth（RE） nanofilm on a single-crystal photoelectron spectroscopy （XPS）, ellipsometer, force microscopy （AFM）. The scratch experiment was performed for interfacial adhesion measurement of the RE film. The friction and wear behavior of RE nanofilm was examined on a DF-PM reciprocating friction and wear tester. The results indicate the RE nanofilm is of low coefficient of friction （COF） and high wear resistance. These desirable characteristics of RE nanofilm together with its nanometer thickness, strong bonding to the substrate and low surface energy make it a promising choice as a solid lubricant film in micro electromechanical system （MEMS） devices.展开更多
The effect of 6H-SiC crystal growth shapes on the thermo-elastic stress distribution in the growing crystal was systematically in- vestigated by using a finite element method. The thermo-elastic stress distribution in...The effect of 6H-SiC crystal growth shapes on the thermo-elastic stress distribution in the growing crystal was systematically in- vestigated by using a finite element method. The thermo-elastic stress distribution in the crystal with a flat growth shape was more homoge- neous than that in the crystals with concave and convex growth shapes, and the value of thermo-elasticity in the crystal with a fiat growth shape was also smaller than that in the two other types of crystals. The maximum values of thermo-elastic stress appeared at interfaces be- tween the crystal and the graphite lid. If the lid was of the same properties as 6H-SiC, the thermo-elastic stress would decrease in two orders of magnitude. Thus, to grow 6H-SiC single crystals of high quality, a transition layer of SiC formed by deposition or reaction is suggested; meanwhile the thermal field in the growth chamber should be adjusted to maintain the crystals with fiat growth shapes.展开更多
Ultra-precision machining causes materials to undergo a greatly strained deformation process in a short period of time.The effect of shear strain rates on machining quality, in particular on surface anisotropy, is a t...Ultra-precision machining causes materials to undergo a greatly strained deformation process in a short period of time.The effect of shear strain rates on machining quality, in particular on surface anisotropy, is a topic deserving of research that has thus far been overlooked.This study analyzes the impact of the strain rate during the ultra-precision turning of single-crystal silicon on the anisotropy of surface roughness.Focusing on the establishment of cutting models considering the tool rake angle and the edge radius, this is the first research that takes into account the strain rate dislocation emission criteria in studying the effects of the edge radius, the cutting speed, and the cutting thickness on the plastic deformation of single-crystal silicon.The results of this study show that the uses of a smaller edge radius, faster cutting speeds, and a reduced cutting thickness can result in optimally uniform surface roughness, while the use of a very sharp cutting tool is essential when operating with smaller cutting thicknesses.A further finding is that insufficient plastic deformation is the major cause of increased surface roughness in the ultra-precision turning of brittle materials.On this basis, we propose that the capacity of single-crystal silicon to emit dislocations be improved as much as possible before brittle fracture occurs, thereby promoting plastic deformation and minimizing the anisotropy of surface roughness in the machined workpiece.展开更多
文摘Silicon carbide(SiC),a group IV compound and wide-bandgap semiconductor for high-power,high-frequency and high-temperature devices,demonstrates excellent inherent properties for power devices and specialized high-end markets.Solution growth is thermodynamically favorable for producing SiC single crystal ingots with ultra-low dislocation density as the crystallization is driven by the supersaturation of carbon dissolved in Si-metal solvents.Meanwhile,solution growth is conducive to the growth of both N-and P-type SiC,with doping concentrations ranging from 10^(14)to 10^(19)cm^(-3).To date,4-inch 4H-SiC substrates with a thickness of 15 mm produced by solution growth have been unveiled,while substrates of 6 inches and above are still under development.Based on top-seeded solution growth(TSSG),several growth techniques have been developed including solution growth on a concave surface(SGCS),melt-back,accelerated crucible rotation technique(ACRT),two-step growth,and facet growth.Multi-parameters of the solution growth including meniscus,solvent design,flow control,dislocation conversion,facet growth,and structures of graphite components make high-quality single crystal growth possible.In this paper,the solution growth techniques and corresponding parameters involved in SiC bulk growth were reviewed.
文摘The self-assembled silicon substrate. The resultant contact angle meter and atomic method was introduced to successfully obtain film was characterized by means of X-ray rare earth（RE） nanofilm on a single-crystal photoelectron spectroscopy （XPS）, ellipsometer, force microscopy （AFM）. The scratch experiment was performed for interfacial adhesion measurement of the RE film. The friction and wear behavior of RE nanofilm was examined on a DF-PM reciprocating friction and wear tester. The results indicate the RE nanofilm is of low coefficient of friction （COF） and high wear resistance. These desirable characteristics of RE nanofilm together with its nanometer thickness, strong bonding to the substrate and low surface energy make it a promising choice as a solid lubricant film in micro electromechanical system （MEMS） devices.
基金financially supported by the National Natural Science Foundation of China (Nos. 51072157 and 50821140308)the Doctoral Fund of the Ministry of Education, China (No. 20100201110036)
文摘The effect of 6H-SiC crystal growth shapes on the thermo-elastic stress distribution in the growing crystal was systematically in- vestigated by using a finite element method. The thermo-elastic stress distribution in the crystal with a flat growth shape was more homoge- neous than that in the crystals with concave and convex growth shapes, and the value of thermo-elasticity in the crystal with a fiat growth shape was also smaller than that in the two other types of crystals. The maximum values of thermo-elastic stress appeared at interfaces be- tween the crystal and the graphite lid. If the lid was of the same properties as 6H-SiC, the thermo-elastic stress would decrease in two orders of magnitude. Thus, to grow 6H-SiC single crystals of high quality, a transition layer of SiC formed by deposition or reaction is suggested; meanwhile the thermal field in the growth chamber should be adjusted to maintain the crystals with fiat growth shapes.
基金supported by the National Defence Scientific Research of China (A3520133004)
文摘Ultra-precision machining causes materials to undergo a greatly strained deformation process in a short period of time.The effect of shear strain rates on machining quality, in particular on surface anisotropy, is a topic deserving of research that has thus far been overlooked.This study analyzes the impact of the strain rate during the ultra-precision turning of single-crystal silicon on the anisotropy of surface roughness.Focusing on the establishment of cutting models considering the tool rake angle and the edge radius, this is the first research that takes into account the strain rate dislocation emission criteria in studying the effects of the edge radius, the cutting speed, and the cutting thickness on the plastic deformation of single-crystal silicon.The results of this study show that the uses of a smaller edge radius, faster cutting speeds, and a reduced cutting thickness can result in optimally uniform surface roughness, while the use of a very sharp cutting tool is essential when operating with smaller cutting thicknesses.A further finding is that insufficient plastic deformation is the major cause of increased surface roughness in the ultra-precision turning of brittle materials.On this basis, we propose that the capacity of single-crystal silicon to emit dislocations be improved as much as possible before brittle fracture occurs, thereby promoting plastic deformation and minimizing the anisotropy of surface roughness in the machined workpiece.
