In this paper, we present a high-efficiency S-band gallium nitride （GaN） power amplifier （PA）. This amplifier is fabri- cated based on a self-developed GaN high-electron-mobility transistor （HEMT） with 10 mm gat...In this paper, we present a high-efficiency S-band gallium nitride （GaN） power amplifier （PA）. This amplifier is fabri- cated based on a self-developed GaN high-electron-mobility transistor （HEMT） with 10 mm gate width on SiC substrate. Harmonic manipulation circuits are presented in the amplifier. The matching networks consist of microstrip lines and discrete components. Open-circuited stub lines in both input and output are used to tune the 2rid harmonic wave and match the GaN HEMT to the highest efficiency condition. The developed amplifier delivers an output power of 48.5 dBm （70 W） with a power-added efficiency （PAE） of 72.2% at 2 GHz in pulse condition. When operating at 1.8-2.2 GHz （20% relative bandwidth）, the amplifier provides an output power higher than 48 dBm （,-~ 65 W）, with a PAE over 70% and a power gain above 15 dB. When operating in continuous-wave （CW） operating conditions, the amplifier gives an output power over 46 dBm （40 W） with PAE beyond 60% over the whole operation frequency range.展开更多
As a cross-lingual, cross-cultural, cross-time-and-space communication, religious translation has inevitably been stamped, from the very beginning, with the brand of ideology and has, more or less, been restrained by ...As a cross-lingual, cross-cultural, cross-time-and-space communication, religious translation has inevitably been stamped, from the very beginning, with the brand of ideology and has, more or less, been restrained by political factors there and then. The translated version, very often, cannot truly mirror the essence of the source text mainly because translation is manipulated by the power discourse in the target culture.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant No.61203211)the Natural Science Foundation of Jiangsu Higher Education Institutions of China(Grant No.13KJB140006)the Foundation for Outstanding Young Teachers of Nanjing University of Information Science&Technology,China(Grant No.20110423)
文摘In this paper, we present a high-efficiency S-band gallium nitride （GaN） power amplifier （PA）. This amplifier is fabri- cated based on a self-developed GaN high-electron-mobility transistor （HEMT） with 10 mm gate width on SiC substrate. Harmonic manipulation circuits are presented in the amplifier. The matching networks consist of microstrip lines and discrete components. Open-circuited stub lines in both input and output are used to tune the 2rid harmonic wave and match the GaN HEMT to the highest efficiency condition. The developed amplifier delivers an output power of 48.5 dBm （70 W） with a power-added efficiency （PAE） of 72.2% at 2 GHz in pulse condition. When operating at 1.8-2.2 GHz （20% relative bandwidth）, the amplifier provides an output power higher than 48 dBm （,-~ 65 W）, with a PAE over 70% and a power gain above 15 dB. When operating in continuous-wave （CW） operating conditions, the amplifier gives an output power over 46 dBm （40 W） with PAE beyond 60% over the whole operation frequency range.
文摘As a cross-lingual, cross-cultural, cross-time-and-space communication, religious translation has inevitably been stamped, from the very beginning, with the brand of ideology and has, more or less, been restrained by political factors there and then. The translated version, very often, cannot truly mirror the essence of the source text mainly because translation is manipulated by the power discourse in the target culture.
