采用雪崩热电子注入技术研究了纳米级富氮 Si Ox Ny 薄膜界面陷阱的物理模型。证实了 PECVDSi Ox Ny 薄膜中界面陷阱来源于悬挂键的物理模型。观察到该纳米膜内存在着受主型电子陷阱 ,随着注入的增长 ,界面上产生的这种陷阱将起主导作...采用雪崩热电子注入技术研究了纳米级富氮 Si Ox Ny 薄膜界面陷阱的物理模型。证实了 PECVDSi Ox Ny 薄膜中界面陷阱来源于悬挂键的物理模型。观察到该纳米膜内存在着受主型电子陷阱 ,随着注入的增长 ,界面上产生的这种陷阱将起主导作用。发现到 Dit随雪崩热电子注入剂量增加而增大 ,禁带上半部 Dit的增大较下半部显著。指出了雪崩注入过程中在 Si Ox Ny 界面上产生两种性质不同的电子陷阱 ,并给出它们能级位置及密度大小关系。揭示出 PECVD法形成的这种纳米膜与快速热氮化制备的薄膜中、氮氧含量不同、界面陷阱特性变化不一样 ,并从薄膜氮化机制予以物理解析。给出了 PECVD形成纳米级薄膜的优化工艺条件 。展开更多
The influences of the plasma ignition condition in plasma enhanced chemical vapour deposition （PECVD） on the interfaces and the microstructures of hydrogenated microcrystalline Si （μc-Si：H） thin films are invest...The influences of the plasma ignition condition in plasma enhanced chemical vapour deposition （PECVD） on the interfaces and the microstructures of hydrogenated microcrystalline Si （μc-Si：H） thin films are investigated. The plasma ignition condition is modified by varying the ratio of Sill4 to H2 （RH）. For plasma ignited with a constant gas ratio, the time-resolved optical emission spectroscopy presents a low value of the emission intensity ratio of Ha to Sill＊ （Iuα//SiH＊） at the initial stage, which leads to a thick amorphous incubation layer. For the ignition condition with a profiling RH, the higher IHα/ISiH＊ values are realized. By optimizing the RN modulation, a uniform crystallinity along the growth direction and a denser αc-Si：H film can be obtained. However, an excessively high IRα/ISIH＊ may damage the interface properties, which is indicated by capacitance-voltage （C-V） measurements. Well controlling the ignition condition is critically important for the applications of Si thin films.展开更多
采用雪崩热电子注入技术研究了富氮 Si Ox Ny 纳米级薄膜的陷阱特性。观察到该薄膜存在着受主型电子陷阱 ,随着注入的增长、界面上产生的这种陷阱将起主导作用 ,其密度大过施主型界面电子陷阱。揭示出界面陷阱密度在禁带中分布 ,其密度...采用雪崩热电子注入技术研究了富氮 Si Ox Ny 纳米级薄膜的陷阱特性。观察到该薄膜存在着受主型电子陷阱 ,随着注入的增长、界面上产生的这种陷阱将起主导作用 ,其密度大过施主型界面电子陷阱。揭示出界面陷阱密度在禁带中分布 ,其密度随雪崩注入剂量增加而增大 ,禁带上半部增大得尤其显著。指出雪崩注入过程中在 Si/ PECVD Si Ox Ny 界面上产生两种性质不同的电子陷阱 ,并给出它们在禁带中的位置及密度大小关系。支持了界面陷阱来源于悬挂键的物理模型 ,由于本实验的重要结果可用该理论模型圆满地解析。给出 PECVD形成纳米级薄膜的优化工艺条件 ,该条件成膜的界面特性良好、耐压范围高。展开更多
The influence of the plasma state on the microstructure transformation from amorphous to nano-(crystalline) state is emphasized during the formation of the silicon carbide (SiC) films deposited by the plasma enhanced ...The influence of the plasma state on the microstructure transformation from amorphous to nano-(crystalline) state is emphasized during the formation of the silicon carbide (SiC) films deposited by the plasma enhanced chemical vapor technique. The effect of two key parameters, the working pressure and hydrogen concentration in the gas flow, that perform the dependence by modulating the two essential factors of the plasma state-ions energy and gas composition, is in-depth investigated. The experimental results showed that nanocrystalline SiC films fit for field emitters could be achieved under an appropriate ion energy flow density and gas components in the (plasma.)展开更多
Hydrogenated microcrystalline silicon （μc-Si：H） films are fabricated by very high frequency plasma enhanced chemical vapour deposition （VHF-PECVD） at a silane concentration of 7% and a varying total gas flow ra...Hydrogenated microcrystalline silicon （μc-Si：H） films are fabricated by very high frequency plasma enhanced chemical vapour deposition （VHF-PECVD） at a silane concentration of 7% and a varying total gas flow rate （H2＋SiH4）. Relations between the total gas flow rate and the electrical and structural properties as well as deposition rate of the films are studied. The results indicate that with the total gas flow rate increasing the photosensitivity and deposition rate increase, but the crystalline volume fraction （Xc） and dark conductivity decrease. And the intensity of （220） peak first increases then decreases with the increase of the total gas flow rate. The cause for the changes in the structure and deposition rate of the films with the total gas flow rate is investigated using optical emission spectroscopy （OES）.展开更多
文摘采用雪崩热电子注入技术研究了纳米级富氮 Si Ox Ny 薄膜界面陷阱的物理模型。证实了 PECVDSi Ox Ny 薄膜中界面陷阱来源于悬挂键的物理模型。观察到该纳米膜内存在着受主型电子陷阱 ,随着注入的增长 ,界面上产生的这种陷阱将起主导作用。发现到 Dit随雪崩热电子注入剂量增加而增大 ,禁带上半部 Dit的增大较下半部显著。指出了雪崩注入过程中在 Si Ox Ny 界面上产生两种性质不同的电子陷阱 ,并给出它们能级位置及密度大小关系。揭示出 PECVD法形成的这种纳米膜与快速热氮化制备的薄膜中、氮氧含量不同、界面陷阱特性变化不一样 ,并从薄膜氮化机制予以物理解析。给出了 PECVD形成纳米级薄膜的优化工艺条件 。
基金Project supported by the National Basic Research Program of China(Grant Nos.G2006CB202601 and 2011CBA00705)the National Natural Science Foundation of China(Grant No.60806020)the Knowledge Innovation Project of Chinese Academy of Sciences(Grant No.KGCX2-YW-383-1)
文摘The influences of the plasma ignition condition in plasma enhanced chemical vapour deposition （PECVD） on the interfaces and the microstructures of hydrogenated microcrystalline Si （μc-Si：H） thin films are investigated. The plasma ignition condition is modified by varying the ratio of Sill4 to H2 （RH）. For plasma ignited with a constant gas ratio, the time-resolved optical emission spectroscopy presents a low value of the emission intensity ratio of Ha to Sill＊ （Iuα//SiH＊） at the initial stage, which leads to a thick amorphous incubation layer. For the ignition condition with a profiling RH, the higher IHα/ISiH＊ values are realized. By optimizing the RN modulation, a uniform crystallinity along the growth direction and a denser αc-Si：H film can be obtained. However, an excessively high IRα/ISIH＊ may damage the interface properties, which is indicated by capacitance-voltage （C-V） measurements. Well controlling the ignition condition is critically important for the applications of Si thin films.
文摘采用雪崩热电子注入技术研究了富氮 Si Ox Ny 纳米级薄膜的陷阱特性。观察到该薄膜存在着受主型电子陷阱 ,随着注入的增长、界面上产生的这种陷阱将起主导作用 ,其密度大过施主型界面电子陷阱。揭示出界面陷阱密度在禁带中分布 ,其密度随雪崩注入剂量增加而增大 ,禁带上半部增大得尤其显著。指出雪崩注入过程中在 Si/ PECVD Si Ox Ny 界面上产生两种性质不同的电子陷阱 ,并给出它们在禁带中的位置及密度大小关系。支持了界面陷阱来源于悬挂键的物理模型 ,由于本实验的重要结果可用该理论模型圆满地解析。给出 PECVD形成纳米级薄膜的优化工艺条件 ,该条件成膜的界面特性良好、耐压范围高。
文摘The influence of the plasma state on the microstructure transformation from amorphous to nano-(crystalline) state is emphasized during the formation of the silicon carbide (SiC) films deposited by the plasma enhanced chemical vapor technique. The effect of two key parameters, the working pressure and hydrogen concentration in the gas flow, that perform the dependence by modulating the two essential factors of the plasma state-ions energy and gas composition, is in-depth investigated. The experimental results showed that nanocrystalline SiC films fit for field emitters could be achieved under an appropriate ion energy flow density and gas components in the (plasma.)
基金Project supported the Key Project of Tianjin Municipal Science and Technology Commission （Grant No 043186511）, the National Natural Science Foundation of China （Grant No 60506003）, and the Chinese-Greece International Project,
文摘Hydrogenated microcrystalline silicon （μc-Si：H） films are fabricated by very high frequency plasma enhanced chemical vapour deposition （VHF-PECVD） at a silane concentration of 7% and a varying total gas flow rate （H2＋SiH4）. Relations between the total gas flow rate and the electrical and structural properties as well as deposition rate of the films are studied. The results indicate that with the total gas flow rate increasing the photosensitivity and deposition rate increase, but the crystalline volume fraction （Xc） and dark conductivity decrease. And the intensity of （220） peak first increases then decreases with the increase of the total gas flow rate. The cause for the changes in the structure and deposition rate of the films with the total gas flow rate is investigated using optical emission spectroscopy （OES）.
