The main focus of this work is to study the effect of the ionic radius of different rare earth dopant cations RE^(3+)(RE=La,Sm,Dy,and Ho) on structural and various physical properties of sodium bismuth titanate(Na_(0....The main focus of this work is to study the effect of the ionic radius of different rare earth dopant cations RE^(3+)(RE=La,Sm,Dy,and Ho) on structural and various physical properties of sodium bismuth titanate(Na_(0.5)B_(0.5)TiO_(3),NBT) based perovskite nanomaterials.The X-ray diffraction data indicate the successful formation of the rhombohedral phase(space group R3c) of NBT nano perovskite incorporated with various rare earth ions in Bi-site.The lattice parameters were found to increase linearly with the ionic radius of the dopant cation.The ionic radii and atomic mass of rare earth dopants appear to be essential factors in the grain growth of the prepared compositions.The grain growth results in better crystallinity of the sample by reducing the microstrain with the increase of dopant ionic radius.Field emission scanning electron microscopy and energy-dispersive X-ray spectra confirm the prepared compositions' phase purity and stoichiometry.The UV-Vis spectra reveal that La-doped NBT composition exhibits the lowest optical band gap,which unfolds the application of NBT-based perovskite as photoactive material.The ac conductivity and complex impedance spectra unveil that the composition with the largest ionic radius,i.e.,La-doped NBT compound,exhibits the highest dc and bulk conductivity with the lowest activation energy.The frequency-dependent dielectric data follows Havriliak-Negami(HN) formalism and non-Debye type relaxation phenomena.Results also indicate that La-doped NBT composition exhibits the highest dielectric strength value.Thus,this study first elaborates that the increasing ionic radius of the rare earth dopant cation in the Bi-site of NBT perovskite improves its microstructural,optical,and electrical properties.展开更多
The amorphous phase-change materials with spontaneous structural relaxation leads to the resistance drift with the time for phase-change neuron synaptic devices. Here, we modify the phase change properties of the conv...The amorphous phase-change materials with spontaneous structural relaxation leads to the resistance drift with the time for phase-change neuron synaptic devices. Here, we modify the phase change properties of the conventional Ge_2Sb_2Te_5(GST) material by introducing an SnS phase. It is found that the resistance drift coefficient of SnS-doped GST was decreased from 0.06 to 0.01. It can be proposed that the origin originates from the precipitation of GST nanocrystals accompanied by the precipitation of SnS crystals compared to single-phase GST compound systems. We also found that the decrease in resistance drift can be attributed to the narrowed bandgap from 0.65 to 0.43 eV after SnS-doping. Thus, this study reveals the quantitative relationship between the resistance drift and the band gap and proposes a new idea for alleviating the resistance drift by composition optimization, which is of great significance for finding a promising phase change material.展开更多
The LPE growth of quaternary InAs11-x-yPxSby with x = 0.2 and y = 0.09 on InAs substrate has been studied. This composition is very suitable for the laser and detector applications at about 2.5 μm. We show that in In...The LPE growth of quaternary InAs11-x-yPxSby with x = 0.2 and y = 0.09 on InAs substrate has been studied. This composition is very suitable for the laser and detector applications at about 2.5 μm. We show that in InAsPSb/InAs system there is a determinate relation between the surface morphology and the lattice mismatch of the epi-wafers, by which we can easily control the melt composition to grow high quality hetero-structures. The reason has been discussed. The p-n junctions with fairly good carrier profile have been prepared in this system.展开更多
Ultraviolet-visible UV-Vis diffuse reflectance measurements of irradiated lithium tetra-borate glass have been acquired using. Evolution 600 Spectrophotometer equipped with praying Mantis Diffuse Reflectance Accessory...Ultraviolet-visible UV-Vis diffuse reflectance measurements of irradiated lithium tetra-borate glass have been acquired using. Evolution 600 Spectrophotometer equipped with praying Mantis Diffuse Reflectance Accessory DRA base upon the onset of the diffuse reflectance spectra of the powdered or bulk materials. Also the absorption edge and band gap energies of the prepared glass were determined. The optical energy gap is calculated and found to be (3.0 - 3.5) eV. Which is in close agreement to the one calculated for r = 1/2, i.e. the transition mechanism, is accordingly direct allowed transition. The density increases from 3.1 to 3.9 gm/cm3 for the undoped and doped glass.展开更多
Two-dimensional （2D） slab photonic crystal waveguides （PCWGs） on silicon-on-insulator （SOI） wafer were designed and fabricated. Full photonic band gap, band gap guided mode, and index guided mode were observed b...Two-dimensional （2D） slab photonic crystal waveguides （PCWGs） on silicon-on-insulator （SOI） wafer were designed and fabricated. Full photonic band gap, band gap guided mode, and index guided mode were observed by measuring the transmission spectra. Mini-stop-bands in the PCWG were simulated with different structure parameters. Coupling characteristics of PCWG were investigated theoretically considering the imperfections during the fabrication process. It was found that suppressing power reservation effect can realize both short coupling length and high coupling efficiency.展开更多
The optical properties of monolayer Ge2Sb2Te5 thin films with three different thicknesses prepared by dc magnetron sputtering method at the range of 400-800 nm were studied. The optical absorption coefficients and the...The optical properties of monolayer Ge2Sb2Te5 thin films with three different thicknesses prepared by dc magnetron sputtering method at the range of 400-800 nm were studied. The optical absorption coefficients and the optical energy gap (Eg) were calculated. The results gave values for the absorption coefficients in the range of (1.3-7.5)×105 cm-1 which were in the high absorption wavelength region of 400-800 nm. The optical energy gaps were 0.684, 0.753 and 0.810 eV corresponding the films thicknesses of 57, 88 and 127 nm, respectively, showing the characteristic of increasing with the increase of the film thickness.展开更多
Bose-Einstein condensate(BEC)exhibits a variety of fascinating and unexpected macroscopic phenomena,and has attracted sustained attention in recent years-particularly in the field of solitons and associated nonlinear ...Bose-Einstein condensate(BEC)exhibits a variety of fascinating and unexpected macroscopic phenomena,and has attracted sustained attention in recent years-particularly in the field of solitons and associated nonlinear phenomena.Meanwhile,optical lattices have emerged as a versatile toolbox for understanding the properties and controlling the dynamics of BEC,among which the realization of bright gap solitons is an iconic result.However,the dark gap solitons are still experimentally unproven,and their properties in more than one dimension remain unknown.In light of this,we describe,numerically and theoretically,the formation and stability properties of gap-type dark localized modes in the context of ultracold atoms trapped in optical lattices.Two kinds of stable dark localized modes-gap solitons and soliton clusters-are predicted in both the one-and two-dimensional geometries.The vortical counterparts of both modes are also constructed in two dimensions.A unique feature is the existence of a nonlinear Bloch-wave background on which all above gap modes are situated.By employing linear-stability analysis and direct simulations,stability regions of the predicted modes are obtained.Our results offer the possibility of observing dark gap localized structures with cutting-edge techniques in ultracold atoms experiments and beyond,including in optics with photonic crystals and lattices.展开更多
Colloidal CdSe quantum dots(QDs)are promising materials for solar cells because of their simple preparation pro-cess and compatibility with flexible substrates.The QD radiative recombination lifetime has attracted eno...Colloidal CdSe quantum dots(QDs)are promising materials for solar cells because of their simple preparation pro-cess and compatibility with flexible substrates.The QD radiative recombination lifetime has attracted enormous attention as it affects the probability of photogenerated charges leaving the QDs and being collected at the battery electrodes.However,the scaling law for the exciton radiative lifetime in CdSe QDs is still a puzzle.This article presents a novel explanation that recon-ciles this controversy.Our calculations agree with the experimental measurements of all three divergent trends in a broadened energy window.Further,we proved that the exciton radiative lifetime is a consequence of the thermal average of decays for all thermally accessible exciton states.Each of the contradictory size-dependent patterns reflects this trend in a specific size range.As the optical band gap increases,the radiative lifetime decreases in larger QDs,increases in smaller QDs,and is weakly depend-ent on size in the intermediate energy region.This study addresses the inconsistencies in the scaling law of the exciton life-time and gives a unified interpretation over a widened framework.Moreover,it provides valuable guidance for carrier separa-tion in the thin film solar cell of CdSe QDs.展开更多
基金Project supported by the Science and Engineering Research Board(SERB)(Govt.of India)(EMR/2017/000325)。
文摘The main focus of this work is to study the effect of the ionic radius of different rare earth dopant cations RE^(3+)(RE=La,Sm,Dy,and Ho) on structural and various physical properties of sodium bismuth titanate(Na_(0.5)B_(0.5)TiO_(3),NBT) based perovskite nanomaterials.The X-ray diffraction data indicate the successful formation of the rhombohedral phase(space group R3c) of NBT nano perovskite incorporated with various rare earth ions in Bi-site.The lattice parameters were found to increase linearly with the ionic radius of the dopant cation.The ionic radii and atomic mass of rare earth dopants appear to be essential factors in the grain growth of the prepared compositions.The grain growth results in better crystallinity of the sample by reducing the microstrain with the increase of dopant ionic radius.Field emission scanning electron microscopy and energy-dispersive X-ray spectra confirm the prepared compositions' phase purity and stoichiometry.The UV-Vis spectra reveal that La-doped NBT composition exhibits the lowest optical band gap,which unfolds the application of NBT-based perovskite as photoactive material.The ac conductivity and complex impedance spectra unveil that the composition with the largest ionic radius,i.e.,La-doped NBT compound,exhibits the highest dc and bulk conductivity with the lowest activation energy.The frequency-dependent dielectric data follows Havriliak-Negami(HN) formalism and non-Debye type relaxation phenomena.Results also indicate that La-doped NBT composition exhibits the highest dielectric strength value.Thus,this study first elaborates that the increasing ionic radius of the rare earth dopant cation in the Bi-site of NBT perovskite improves its microstructural,optical,and electrical properties.
基金financially supported by the National Natural Science Foundation of China(Grant No.62074089)the Natural Science Foundation of Ningbo City,China(Grant No.2022J072)+1 种基金the Youth Science and Technology Innovation Leading Talent Project of Ningbo City,China(Grant No.2023QL005)sponsored by the K.C.Wong Magna Fund in Ningbo University。
文摘The amorphous phase-change materials with spontaneous structural relaxation leads to the resistance drift with the time for phase-change neuron synaptic devices. Here, we modify the phase change properties of the conventional Ge_2Sb_2Te_5(GST) material by introducing an SnS phase. It is found that the resistance drift coefficient of SnS-doped GST was decreased from 0.06 to 0.01. It can be proposed that the origin originates from the precipitation of GST nanocrystals accompanied by the precipitation of SnS crystals compared to single-phase GST compound systems. We also found that the decrease in resistance drift can be attributed to the narrowed bandgap from 0.65 to 0.43 eV after SnS-doping. Thus, this study reveals the quantitative relationship between the resistance drift and the band gap and proposes a new idea for alleviating the resistance drift by composition optimization, which is of great significance for finding a promising phase change material.
文摘The LPE growth of quaternary InAs11-x-yPxSby with x = 0.2 and y = 0.09 on InAs substrate has been studied. This composition is very suitable for the laser and detector applications at about 2.5 μm. We show that in InAsPSb/InAs system there is a determinate relation between the surface morphology and the lattice mismatch of the epi-wafers, by which we can easily control the melt composition to grow high quality hetero-structures. The reason has been discussed. The p-n junctions with fairly good carrier profile have been prepared in this system.
文摘Ultraviolet-visible UV-Vis diffuse reflectance measurements of irradiated lithium tetra-borate glass have been acquired using. Evolution 600 Spectrophotometer equipped with praying Mantis Diffuse Reflectance Accessory DRA base upon the onset of the diffuse reflectance spectra of the powdered or bulk materials. Also the absorption edge and band gap energies of the prepared glass were determined. The optical energy gap is calculated and found to be (3.0 - 3.5) eV. Which is in close agreement to the one calculated for r = 1/2, i.e. the transition mechanism, is accordingly direct allowed transition. The density increases from 3.1 to 3.9 gm/cm3 for the undoped and doped glass.
基金the National Natural Science Foundation of China(NSFC-60537010)the National"973"Program of China(No.2007CB307004 and 2006CB302804)
文摘Two-dimensional （2D） slab photonic crystal waveguides （PCWGs） on silicon-on-insulator （SOI） wafer were designed and fabricated. Full photonic band gap, band gap guided mode, and index guided mode were observed by measuring the transmission spectra. Mini-stop-bands in the PCWG were simulated with different structure parameters. Coupling characteristics of PCWG were investigated theoretically considering the imperfections during the fabrication process. It was found that suppressing power reservation effect can realize both short coupling length and high coupling efficiency.
文摘The optical properties of monolayer Ge2Sb2Te5 thin films with three different thicknesses prepared by dc magnetron sputtering method at the range of 400-800 nm were studied. The optical absorption coefficients and the optical energy gap (Eg) were calculated. The results gave values for the absorption coefficients in the range of (1.3-7.5)×105 cm-1 which were in the high absorption wavelength region of 400-800 nm. The optical energy gaps were 0.684, 0.753 and 0.810 eV corresponding the films thicknesses of 57, 88 and 127 nm, respectively, showing the characteristic of increasing with the increase of the film thickness.
基金This work was supported,in part,by the National Natural Science Foundation of China(Project Nos.61690224 and 61690222)the Youth Innovation Promotion Association of the Chinese Academy of Sciences(Project No.2016357).
文摘Bose-Einstein condensate(BEC)exhibits a variety of fascinating and unexpected macroscopic phenomena,and has attracted sustained attention in recent years-particularly in the field of solitons and associated nonlinear phenomena.Meanwhile,optical lattices have emerged as a versatile toolbox for understanding the properties and controlling the dynamics of BEC,among which the realization of bright gap solitons is an iconic result.However,the dark gap solitons are still experimentally unproven,and their properties in more than one dimension remain unknown.In light of this,we describe,numerically and theoretically,the formation and stability properties of gap-type dark localized modes in the context of ultracold atoms trapped in optical lattices.Two kinds of stable dark localized modes-gap solitons and soliton clusters-are predicted in both the one-and two-dimensional geometries.The vortical counterparts of both modes are also constructed in two dimensions.A unique feature is the existence of a nonlinear Bloch-wave background on which all above gap modes are situated.By employing linear-stability analysis and direct simulations,stability regions of the predicted modes are obtained.Our results offer the possibility of observing dark gap localized structures with cutting-edge techniques in ultracold atoms experiments and beyond,including in optics with photonic crystals and lattices.
基金supported by the National Key Research and Development Program of China under Grant No.2021YFB2800304.
文摘Colloidal CdSe quantum dots(QDs)are promising materials for solar cells because of their simple preparation pro-cess and compatibility with flexible substrates.The QD radiative recombination lifetime has attracted enormous attention as it affects the probability of photogenerated charges leaving the QDs and being collected at the battery electrodes.However,the scaling law for the exciton radiative lifetime in CdSe QDs is still a puzzle.This article presents a novel explanation that recon-ciles this controversy.Our calculations agree with the experimental measurements of all three divergent trends in a broadened energy window.Further,we proved that the exciton radiative lifetime is a consequence of the thermal average of decays for all thermally accessible exciton states.Each of the contradictory size-dependent patterns reflects this trend in a specific size range.As the optical band gap increases,the radiative lifetime decreases in larger QDs,increases in smaller QDs,and is weakly depend-ent on size in the intermediate energy region.This study addresses the inconsistencies in the scaling law of the exciton life-time and gives a unified interpretation over a widened framework.Moreover,it provides valuable guidance for carrier separa-tion in the thin film solar cell of CdSe QDs.
