In this paper a comparison of a sixth-order active band pass R-filter output response with the output response of a sixth-order band pass RC-filter at different quality factors (Q = 2, 5, 7, 8 and 10) was carried out ...In this paper a comparison of a sixth-order active band pass R-filter output response with the output response of a sixth-order band pass RC-filter at different quality factors (Q = 2, 5, 7, 8 and 10) was carried out at a fixed frequency of 10 KHz. The architecture used in the design is the multiple feedbacks for both filter networks. The simulated response characteristics show that both filters (R- and RC-filters) have their mid-band gains increasing with Q, while their bandwidths monotonically decreased with Q-values. The bandwidths are in the range of 22.23 dB to 62.97 dB and –55.49 dB to –50.81 dB (Q = 2 to 10) for R- and RC-filters respectively. At higher Q-values, R-filter showed better selectivity with a smaller bandwidth (400 Hz) at the edge of the pass band, when compared to 450 Hz for the RC-filter. The roll-off rate around –58.9 dB/decade for the R-filter appears to be that of a third-order filter response, while the RC-filter has its response in the range –106 to –132 dB/decade which is in the neighbourhood of an ideal sixth-order response (roll-off of 120 db/decade). A shift in the center frequency with Q was observed for the RC-filter only.展开更多
Nowadays FinFET devices have replaced the MOS devices almost in all complex integrated circuits of electronic gadgets like computer peripherals, tablets, and smartphones in portable electronics. The scaling of FinFET ...Nowadays FinFET devices have replaced the MOS devices almost in all complex integrated circuits of electronic gadgets like computer peripherals, tablets, and smartphones in portable electronics. The scaling of FinFET is ongoing and the analog/RF performance is most affected by increased SCEs(short channel effects) in sub22 nm technology nodes. This paper explores the analog/RF performance study and analysis of high performance device-D2(conventional Hf02 spacer SOI FinFET) and device-D3(source/drain extended Hf02 spacer SOI FinFET) over the device-D1(conventional Si3 N4 spacer SOI FinFET) at 20 nm technology node through the 3-D(dimensional) simulation process. The major performance parameters like I(ON current), I(OFF current), gm(transconductance), gd(output conductance), A(intrinsic gain), SS(sub-threshold slope), TGF = g/I(trans-conductance generation factor), VEA(early voltage), GTFP(gain trans-conductance frequency product), TFP(tansconductance frequency product), GFP(gain frequency product), and f(cut-off frequency) are studied for evaluating the analog/RF performance of different flavored SOI FinFET structures. For analog performance evaluation,device-D3 and D2 give better results in terms of gm, ID(drain current) and SS parameters, and for RF performance evaluation device-D1 is better in terms of f, GTFP, TFP, and GFP parameters both at low and high values of V=0.05 V and V=0.7 V respectively.展开更多
Considering spectrum tilt due to signal-to-signal Raman scattering (SSRS) in backward distributed fiber Raman amplifiers (B-DFRA),an inverse tilted on-off gain profile is adopted to achieve flat net gain.A simple appr...Considering spectrum tilt due to signal-to-signal Raman scattering (SSRS) in backward distributed fiber Raman amplifiers (B-DFRA),an inverse tilted on-off gain profile is adopted to achieve flat net gain.A simple approximate linear relationship of pump power at each wavelength versus on-off gain level and tilt was derived numerically and experimentally so that a novel control method was established.Since there are only 3 pre-determinable constants required for individual pump wave,it is easy to be realized.As an example,maximum errors less than 0.2 and 0.4 dB respectively for average gain and gain tilt were achieved over C+L band in 100-km back-pumped standard single-mode fiber (SMF) experimentally.展开更多
文摘In this paper a comparison of a sixth-order active band pass R-filter output response with the output response of a sixth-order band pass RC-filter at different quality factors (Q = 2, 5, 7, 8 and 10) was carried out at a fixed frequency of 10 KHz. The architecture used in the design is the multiple feedbacks for both filter networks. The simulated response characteristics show that both filters (R- and RC-filters) have their mid-band gains increasing with Q, while their bandwidths monotonically decreased with Q-values. The bandwidths are in the range of 22.23 dB to 62.97 dB and –55.49 dB to –50.81 dB (Q = 2 to 10) for R- and RC-filters respectively. At higher Q-values, R-filter showed better selectivity with a smaller bandwidth (400 Hz) at the edge of the pass band, when compared to 450 Hz for the RC-filter. The roll-off rate around –58.9 dB/decade for the R-filter appears to be that of a third-order filter response, while the RC-filter has its response in the range –106 to –132 dB/decade which is in the neighbourhood of an ideal sixth-order response (roll-off of 120 db/decade). A shift in the center frequency with Q was observed for the RC-filter only.
文摘Nowadays FinFET devices have replaced the MOS devices almost in all complex integrated circuits of electronic gadgets like computer peripherals, tablets, and smartphones in portable electronics. The scaling of FinFET is ongoing and the analog/RF performance is most affected by increased SCEs(short channel effects) in sub22 nm technology nodes. This paper explores the analog/RF performance study and analysis of high performance device-D2(conventional Hf02 spacer SOI FinFET) and device-D3(source/drain extended Hf02 spacer SOI FinFET) over the device-D1(conventional Si3 N4 spacer SOI FinFET) at 20 nm technology node through the 3-D(dimensional) simulation process. The major performance parameters like I(ON current), I(OFF current), gm(transconductance), gd(output conductance), A(intrinsic gain), SS(sub-threshold slope), TGF = g/I(trans-conductance generation factor), VEA(early voltage), GTFP(gain trans-conductance frequency product), TFP(tansconductance frequency product), GFP(gain frequency product), and f(cut-off frequency) are studied for evaluating the analog/RF performance of different flavored SOI FinFET structures. For analog performance evaluation,device-D3 and D2 give better results in terms of gm, ID(drain current) and SS parameters, and for RF performance evaluation device-D1 is better in terms of f, GTFP, TFP, and GFP parameters both at low and high values of V=0.05 V and V=0.7 V respectively.
文摘Considering spectrum tilt due to signal-to-signal Raman scattering (SSRS) in backward distributed fiber Raman amplifiers (B-DFRA),an inverse tilted on-off gain profile is adopted to achieve flat net gain.A simple approximate linear relationship of pump power at each wavelength versus on-off gain level and tilt was derived numerically and experimentally so that a novel control method was established.Since there are only 3 pre-determinable constants required for individual pump wave,it is easy to be realized.As an example,maximum errors less than 0.2 and 0.4 dB respectively for average gain and gain tilt were achieved over C+L band in 100-km back-pumped standard single-mode fiber (SMF) experimentally.
