该文设计和制作了一款单片集成硅锗异质结双极晶体管(SiGe HBT)低噪声放大器(LNA)。由于放大器采用复合型电阻负反馈结构,所以可灵活调整不同反馈电阻,同时获得合适的偏置、良好的端口匹配和低的噪声系数。基于0.35μm Si CMOS平面工艺...该文设计和制作了一款单片集成硅锗异质结双极晶体管(SiGe HBT)低噪声放大器(LNA)。由于放大器采用复合型电阻负反馈结构,所以可灵活调整不同反馈电阻,同时获得合适的偏置、良好的端口匹配和低的噪声系数。基于0.35μm Si CMOS平面工艺制定了放大器单芯片集成的工艺流程。为了进一步降低放大器的噪声系数,在制作放大器中SiGe器件时,采用钛硅合金(TiSi2)来减小晶体管基极电阻。由于没有使用占片面积大的螺旋电感,最终研制出的SiGe HBT LNA芯片面积仅为0.282mm2。测试结果表明,在工作频带0.2-1.2GHz内,LNA噪声系数低至2.5dB,增益高达26.7dB,输入输出端口反射系数分别小于-7.4dB和-10dB。展开更多
An optimum design of a low noise amplifier （LNA） in S-band working at 2-4 GHz is described. Choosing FHC40LG high electronic mobility transistor （HEMT）, the noise figure of the designed amplifier simulated by Micr...An optimum design of a low noise amplifier （LNA） in S-band working at 2-4 GHz is described. Choosing FHC40LG high electronic mobility transistor （HEMT）, the noise figure of the designed amplifier simulated by Microwave Office is no more than 1.5 dB, meanwhile the gain is no less than 20 dB in the given bandwidth. The simulated results agree with the performance of the transistor itself well in consideration of its own minimum noise figure （0.3 dB） and associated gain （15.5 dB）. Simultaneously, the stability factor of the designed amplifier is no less than 1 in the given bandwidth.展开更多
Mixers in the communication system provide the possibility of encoding and decoding radio-frequency EM waves with signals through the help of local oscillators. A mixer with capability of high conversion gain, good is...Mixers in the communication system provide the possibility of encoding and decoding radio-frequency EM waves with signals through the help of local oscillators. A mixer with capability of high conversion gain, good isolation, and good linearity is comparably appreciated. Extensively wide ranges of frequencies, from 5.0 to 18.0 GHz, are to be examined addressing the promising functions of mixers in this study. A TSMC 0.18 μm CMOS model implanted in Agilent ADS is used for the circuit designs. Generated from Gilbert Cell Mixer, the modified circuits take advantage of extra active and passive devices to optimize the conversion gains. Characteristics of high conversion gain over 20 dB or even higher (as high as 29.842 dB at -40 mW RF power at working frequency 6 GHz) and low noise figures (NF) are shown.展开更多
An inductorless multi-mode RF front end for a global navigation satellite system （GNSS） receiver is presented. Unlike the traditional topology of a low noise amplifier （LNA）, the inductorless current-mode noise- c...An inductorless multi-mode RF front end for a global navigation satellite system （GNSS） receiver is presented. Unlike the traditional topology of a low noise amplifier （LNA）, the inductorless current-mode noise- canceling LNA is applied in this design. The high-impedance-input radio frequency amplifier （RFA） further am- plifies the GNSS signals and changes the single-end signal path into fully differential. The passive mixer down- converts the signals to the intermediate frequency （IF） band and conveys the signals to the analogue blocks. The local oscillator （LO） buffer divides the output frequency of the voltage controlled oscillator （VCO） and generates 25%-duty-cycle quadrature square waves to drive the mixer. Our measurement results display that the implemented RF front end achieves good overall performance while consuming only 6.7 mA from 1.2 V supply. The input return loss is better than -26 dB and the ultra low noise figure of 1.43 dB leads to high sensitivity of the GNSS receiver. The input 1 dB compression point is -43 dBm at the high gain of 48 dB. The designed circuit is fabricated in 55 nm CMOS technology and the die area, which is much smaller than traditional circuit, is around 220×280 μm2.展开更多
基金This work was supported by the National Natural Science Foundation of China under Grant No.60401006the Vacuum Electronics National Laboratory under Grant No. NKLC001-053.
文摘An optimum design of a low noise amplifier （LNA） in S-band working at 2-4 GHz is described. Choosing FHC40LG high electronic mobility transistor （HEMT）, the noise figure of the designed amplifier simulated by Microwave Office is no more than 1.5 dB, meanwhile the gain is no less than 20 dB in the given bandwidth. The simulated results agree with the performance of the transistor itself well in consideration of its own minimum noise figure （0.3 dB） and associated gain （15.5 dB）. Simultaneously, the stability factor of the designed amplifier is no less than 1 in the given bandwidth.
文摘Mixers in the communication system provide the possibility of encoding and decoding radio-frequency EM waves with signals through the help of local oscillators. A mixer with capability of high conversion gain, good isolation, and good linearity is comparably appreciated. Extensively wide ranges of frequencies, from 5.0 to 18.0 GHz, are to be examined addressing the promising functions of mixers in this study. A TSMC 0.18 μm CMOS model implanted in Agilent ADS is used for the circuit designs. Generated from Gilbert Cell Mixer, the modified circuits take advantage of extra active and passive devices to optimize the conversion gains. Characteristics of high conversion gain over 20 dB or even higher (as high as 29.842 dB at -40 mW RF power at working frequency 6 GHz) and low noise figures (NF) are shown.
文摘An inductorless multi-mode RF front end for a global navigation satellite system （GNSS） receiver is presented. Unlike the traditional topology of a low noise amplifier （LNA）, the inductorless current-mode noise- canceling LNA is applied in this design. The high-impedance-input radio frequency amplifier （RFA） further am- plifies the GNSS signals and changes the single-end signal path into fully differential. The passive mixer down- converts the signals to the intermediate frequency （IF） band and conveys the signals to the analogue blocks. The local oscillator （LO） buffer divides the output frequency of the voltage controlled oscillator （VCO） and generates 25%-duty-cycle quadrature square waves to drive the mixer. Our measurement results display that the implemented RF front end achieves good overall performance while consuming only 6.7 mA from 1.2 V supply. The input return loss is better than -26 dB and the ultra low noise figure of 1.43 dB leads to high sensitivity of the GNSS receiver. The input 1 dB compression point is -43 dBm at the high gain of 48 dB. The designed circuit is fabricated in 55 nm CMOS technology and the die area, which is much smaller than traditional circuit, is around 220×280 μm2.
