摘要
针对无线通讯设备面向高性能、低成本、低电压、低功耗和小体积的应用,对基本的CMOS Gilbert混频器构架加以改进。改进后的混频器在3V下具有高线性度(IIP3=7.4dBm),隔离度较高,提供13dB的变频增益,而噪声也在12.5dB以下。
Based upon the basic CMOS Gilbert mixer structure, aiming at the application of the good performance, low cost, low voltage, low power consumption and small size ICs for the wireless communication, an improved mixer is presented, working under 3V supply voltage with high linearity （HP 3=7.4dBm）, good isolation, 13dB conversion gain and NF less than 12.5dB.
出处
《半导体技术》
CAS
CSCD
北大核心
2005年第10期65-69,共5页
Semiconductor Technology
