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4英寸SiC衬底上高性能GaN HEMT材料 被引量:2
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作者 尹甲运 房玉龙 +2 位作者 盛百城 蔡树军 冯志红 《微纳电子技术》 CAS 北大核心 2013年第7期430-433,共4页
使用金属有机气相沉积(MOCVD)设备在4英寸(1英寸=2.54 cm)半绝缘SiC衬底上进行了GaN HEMT结构材料的生长。GaN外延材料(002)和(102)面X射线摇摆曲线半高宽分别为166和238 arcsec,表面粗糙度(Rms)(5μm×5μm)达到0.174 nm,表明GaN... 使用金属有机气相沉积(MOCVD)设备在4英寸(1英寸=2.54 cm)半绝缘SiC衬底上进行了GaN HEMT结构材料的生长。GaN外延材料(002)和(102)面X射线摇摆曲线半高宽分别为166和238 arcsec,表面粗糙度(Rms)(5μm×5μm)达到0.174 nm,表明GaN外延材料具有较好的晶体质量。另外,喇曼测试发现整个4英寸GaN外延材料应力分布比较均匀,与3英寸GaN外延材料相比应力没有增加。通过非接触霍尔测得GaN HEMT结构材料二维电子气的迁移率达到2 153 cm2/(V.s)、面密度为9.49×1012 cm-2,方块电阻相对标准偏差1.1%,表现出良好的电学性能和均匀性。 展开更多
关键词 SIC衬底 GaN HEMT 位错 迁移率 金属有机气相沉积(mocvd)
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6英寸硅基GaN HEMT外延材料的制备 被引量:1
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作者 白欣娇 袁凤坡 +3 位作者 王文军 房玉龙 李晓波 李浩 《半导体技术》 CAS CSCD 北大核心 2018年第5期359-363,368,共6页
采用金属有机物化学气相沉积(MOCVD)方法,在6英寸(1英寸=2.54 cm)Si(111)衬底上,使用多层不同Al摩尔组分的AlGaN插入层技术,成功生长出厚度为2.9μm无裂纹(扣除边缘2 mm)的GaN外延层,解决了大尺寸外延片的翘曲度问题,并在此基... 采用金属有机物化学气相沉积(MOCVD)方法,在6英寸(1英寸=2.54 cm)Si(111)衬底上,使用多层不同Al摩尔组分的AlGaN插入层技术,成功生长出厚度为2.9μm无裂纹(扣除边缘2 mm)的GaN外延层,解决了大尺寸外延片的翘曲度问题,并在此基础上生长了全结构的高电子迁移率晶体管(HEMT)外延片。采用X射线双晶衍射对外延材料结构进行了表征。Hall测试结果表明,HEMT外延材料的迁移率为2 080 cm^2/(V·s),方块电阻为279.8Ω/,电荷面密度为1.07×10^(13)cm^(-2)。采用喇曼光谱仪对GaN的应力进行了表征,GaN的喇曼E2(h)峰位于567.02 cm^(-1),表面受到的张应力为0.170 6 GPa,由于GaN外延层受到的张应力很小,说明插入多层AlGaN后应力已经释放。汞探针C-V测试二维电子气浓度较Hall测试结果偏低,可能是在C-V测试时肖特基势垒接触会降低载流子浓度。 展开更多
关键词 Si GAN 高电子迁移率晶体管(HEMT) 金属有机物化学气相沉积(mocvd) AlGaN插入层
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Synthesis, characterization, and thermostability of bis(2,2,6,6-tetramethyl-3,5-heptanedionato)barium(Ⅱ) 被引量:1
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作者 Teng Zhang Hong-Wei Gu +2 位作者 Fa-Zhu Ding Fei Qu Shao-Tao Dai 《Rare Metals》 SCIE EI CAS CSCD 2013年第1期67-74,共8页
The metal-organic chemical vapor deposition (MOCVD) technique is a promising process for high-tem- perature superconductor YBa2Cu307_6(YBCO) preparation. In this technique, it is a challenge to obtain barium precu... The metal-organic chemical vapor deposition (MOCVD) technique is a promising process for high-tem- perature superconductor YBa2Cu307_6(YBCO) preparation. In this technique, it is a challenge to obtain barium precursors with high volatility. In addition, the purity, evaporation characteristics, and thermostability of adopted precursors in whole process will decide the quality and reproducible results of YBCO film. In the present report, bis(2,2,6,6-tetramethyl- 3,5-heptanedionato)barium(II) (Ba(TMHD)2) was synthe- sized, and its structure was identified by PTIR, 1H NMR, 13C NMR, and ESI-MS spectroscopy. Subsequently, the thermal properties and the kinetics of decomposition were systemati- cally investigated by nonisothermal thermogravimetric anal- ysis methods. Based on the average apparent activation energy evaluated by the Ozawa, Kissinger, and Friedman methods, the volatilization process was discussed, and all results show that Ba(TMHD)2 is unstable and highly sensitive to the change of temperature during the whole evaporation process. There- fore, it is very important to choose suitable volatilization technology and conditions for avoiding Ba(TMHD)2 break- down (or thermal aging) during MOCVD process. Subse- quently, the possible conversion function is estimated through the Coats-Redfern method to characterize the evaporation patterns and follows a phase boundary reaction mechanism by the contracting surface equation with average activation energy of 118.7 kJ.mo1-1. 展开更多
关键词 Ba(TMHD)2 metal-organic chemical vapordeposition mocvd SYNTHESIS Thermostability
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