摘要
使用金属有机气相沉积(MOCVD)设备在4英寸(1英寸=2.54 cm)半绝缘SiC衬底上进行了GaN HEMT结构材料的生长。GaN外延材料(002)和(102)面X射线摇摆曲线半高宽分别为166和238 arcsec,表面粗糙度(Rms)(5μm×5μm)达到0.174 nm,表明GaN外延材料具有较好的晶体质量。另外,喇曼测试发现整个4英寸GaN外延材料应力分布比较均匀,与3英寸GaN外延材料相比应力没有增加。通过非接触霍尔测得GaN HEMT结构材料二维电子气的迁移率达到2 153 cm2/(V.s)、面密度为9.49×1012 cm-2,方块电阻相对标准偏差1.1%,表现出良好的电学性能和均匀性。
The GaN HEMT structural materials were grown on the 4 inch （1 inch = 2.54 cm） semi-insulating SiC substrates by metal organic chemical vapor deposition （MOCVD） equipment. The full widths at half maximum （FWHMs） of XRD rocking curves for the （002） and （102） sur- faces of the GaN epitaxial material are 166 and 238 arcsec, respectively, and the surface rough- ness （Rms） （5 μm×5 μm） reaches 0. 174 nm, which indicate that the GaN epitaxial material has good crystalline quality. The Raman test shows that the stress distribution of the whole 4 inch GaN epitaxial material is more uniform, and the stress does not increase compared with the 3 inch GaN epitaxial material. The contactless Hall test indicates that the two-dimensional electron gas （2DEG） mobility of the GaN HEMT structural material reaches 2 153 cm2/（V · s）, the sheet density is 9.49 × 10^12 cm-2 , and the relative standard deviation of the square resistance is 1.1%0, showing the good electrical performance and uniformity.
出处
《微纳电子技术》
CAS
北大核心
2013年第7期430-433,共4页
Micronanoelectronic Technology
