The GeSn binary alloy is a new group IV material that exhibits a direct bandgap when the Sn content ex- ceeds 6%. It shows great potential for laser use in optoelectronic integration circuits （OEIC） on account of it...The GeSn binary alloy is a new group IV material that exhibits a direct bandgap when the Sn content ex- ceeds 6%. It shows great potential for laser use in optoelectronic integration circuits （OEIC） on account of its low light emission efficiency arising from the indirect bandgap characteristics of Si and Ge. The bandgap of GeSn can be tuned from 0.6 to 0 eV by varying the Sn content, thus making this alloy suitable for use in near-infrared and mid-infrared detectors. In this paper, the growth of the GeSn alloy is first reviewed. Subsequently, GeSn photode- tectors, light emitting diodes, and lasers are discussed. The GeSn alloy presents a promising pathway for the mono- lithic integration of Si photonic circuits by the complementary metal-oxide-semiconductor （CMOS） technology.展开更多
A Ca9Yb（VO4）7 crystal with dimensions of Φ23 mm×35 mm was grown successfully by Czochralski method. Its thermal conductivity was 1.06 W/（m？K） at room temperature. The absorption cross-sections at 980 nm wer...A Ca9Yb（VO4）7 crystal with dimensions of Φ23 mm×35 mm was grown successfully by Czochralski method. Its thermal conductivity was 1.06 W/（m？K） at room temperature. The absorption cross-sections at 980 nm were 1.80×10–20 cm2 and 1.28×10–20 cm2 for π- and σ- polarizations, respectively, with a full-width at half-maximum of 34 nm. The crystal had a broad emission at around 1025 nm with a full-width at half-maximum of 67 nm for π- polarization and 70 nm for σ- polarization. The emission cross-sections of the crystal were calculated by using reciprocity method and Füchtbauer-Ladenburg formula. The emission cross-sections at 1025 nm were 3.57×10–20 cm–2 and 1.91×10–20 cm–2 for π- and σ- polarization, respectively. The fluorescence lifetime was 332 μs. The results indicated that the crystal is a promising femtosecond and tunable laser material.展开更多
基金Project supported by the Beijing Natural Science Foundation(No.4162063)the Youth Innovation Promotion Association of CAS(No.2015091)
文摘The GeSn binary alloy is a new group IV material that exhibits a direct bandgap when the Sn content ex- ceeds 6%. It shows great potential for laser use in optoelectronic integration circuits （OEIC） on account of its low light emission efficiency arising from the indirect bandgap characteristics of Si and Ge. The bandgap of GeSn can be tuned from 0.6 to 0 eV by varying the Sn content, thus making this alloy suitable for use in near-infrared and mid-infrared detectors. In this paper, the growth of the GeSn alloy is first reviewed. Subsequently, GeSn photode- tectors, light emitting diodes, and lasers are discussed. The GeSn alloy presents a promising pathway for the mono- lithic integration of Si photonic circuits by the complementary metal-oxide-semiconductor （CMOS） technology.
基金Project supported by National Natural Science Foundation of China(61275177,61475158,51302260)National Natural Science Foundation of Fujian Province(2014H0052)
文摘A Ca9Yb（VO4）7 crystal with dimensions of Φ23 mm×35 mm was grown successfully by Czochralski method. Its thermal conductivity was 1.06 W/（m？K） at room temperature. The absorption cross-sections at 980 nm were 1.80×10–20 cm2 and 1.28×10–20 cm2 for π- and σ- polarizations, respectively, with a full-width at half-maximum of 34 nm. The crystal had a broad emission at around 1025 nm with a full-width at half-maximum of 67 nm for π- polarization and 70 nm for σ- polarization. The emission cross-sections of the crystal were calculated by using reciprocity method and Füchtbauer-Ladenburg formula. The emission cross-sections at 1025 nm were 3.57×10–20 cm–2 and 1.91×10–20 cm–2 for π- and σ- polarization, respectively. The fluorescence lifetime was 332 μs. The results indicated that the crystal is a promising femtosecond and tunable laser material.
