Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)(PEDOT:PSS)has been widely adopted as hole transport material(HTM)in inverted perovskite solar cells(PSCs),due to high optical transparency,good mechanical flexib...Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)(PEDOT:PSS)has been widely adopted as hole transport material(HTM)in inverted perovskite solar cells(PSCs),due to high optical transparency,good mechanical flexibility,and high thermal stability;however,its acidity and hygroscopicity inevitably hamper the long-term stability of the PSCs and its energy level does not match well with perovskite materials with a relatively low open-circuit voltage.In this work,p-type delafossite CuCrO_(2)nanoparticles synthesized through hydrothermal method was employed as an alternative HTM for triple cation perovskite[(FAPbI_(3))_(0.87)(MAPbBr_(3))_(0.13)]_(0.92)(CsPbI_(3))_(0.08)(possessing better photovoltaic performance and stability than conventional CH3NH3PbI3)based inverted PSCs.The average open-circuit voltage of PSCs increases from 908 mV of the devices with PEDOT:PSS HTM to 1020 m V of the devices with CuCrO_(2)HTM.Ultraviolet photoemission spectroscopy demonstrates the energy band alignment between CuCrO_(2)and perovskite is better than that between PEDOT:PSS and perovskite,the electrochemical impedance spectroscopy indicates CuCrO_(2)-based PSCs exhibit larger recombination resistance and longer charge carrier lifetime than PEDOT:PSS-based PSCs,which contributes to the high VOCof CuCrO_(2)HTM-based PSCs.展开更多
Design and characterization of a G-band（140–220 GHz） terahertz monolithic integrated circuit（TMIC） amplifier in eight-stage common-emitter topology are performed based on the 0.5-μm In Ga As/In P double heteroju...Design and characterization of a G-band（140–220 GHz） terahertz monolithic integrated circuit（TMIC） amplifier in eight-stage common-emitter topology are performed based on the 0.5-μm In Ga As/In P double heterojunction bipolar transistor（DHBT）. An inverted microstrip line is implemented to avoid a parasitic mode between the ground plane and the In P substrate. The on-wafer measurement results show that peak gains are 20 dB at 140 GHz and more than 15-dB gain at 140–190 GHz respectively. The saturation output powers are-2.688 dBm at 210 GHz and-2.88 dBm at 220 GHz,respectively. It is the first report on an amplifier operating at the G-band based on 0.5-μm InP DHBT technology. Compared with the hybrid integrated circuit of vacuum electronic devices, the monolithic integrated circuit has the advantage of reliability and consistency. This TMIC demonstrates the feasibility of the 0.5-μm InGaAs/InP DHBT amplifier in G-band frequencies applications.展开更多
A low temperature sol-gel process was used to fabricate zinc-oxide and yttrium-doped zinc oxide layers. These zinc-oxide and yttrium-doped ZnO films were used as electron transport layers in conjunction with P<sub&...A low temperature sol-gel process was used to fabricate zinc-oxide and yttrium-doped zinc oxide layers. These zinc-oxide and yttrium-doped ZnO films were used as electron transport layers in conjunction with P<sub>3</sub>HT and PC<sub>16</sub>BM type solar cells. It was demonstrated that annealing and doping of electron transport layer influenced the overall organic solar cells performance. Anneals of ~ 150?C provided the highest device performance. Compared to the undoped zinc oxide, the device with yttrium doped zinc oxide layers showed improved efficiency by about 30%. Furthermore an equivalent circuit was proposed to understand the connection between the electrical and optical characteristics of the device. Comparisons between the simulated and experimental current-voltage(I-V) curves displayed only a 1.2% variation between the curves. Clearly, our experimental and simulated studies provide new insight on the equivalent circuit models for inverted organic solar cells and further improvement on photovoltaic efficiency.展开更多
基金jointly supported by the National Natural Science Foundation of China(No.62075223 and No.11674324)CAS Pioneer Hundred Talents Program of Chinese Academy of Sciences+5 种基金CAS-JSPS Joint Research Projects(GJHZ1891)Director Fund of Advanced Laser Technology Laboratory of Anhui Province(AHL2020ZR02)Key Lab of Photovoltaic and Energy Conservation Materials of Chinese Academy of Sciences(PECL2019QN005 and PECL2018QN001)the Natural Science Foundation of Top Talent of Shenzhen Technology University(No.2020101)Natural Science Research Project of Higher School of Anhui Province(KJ2020A0477)Initial Scientific Research Fund of Anhui Jianzhu University(No.2018QD60)。
文摘Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)(PEDOT:PSS)has been widely adopted as hole transport material(HTM)in inverted perovskite solar cells(PSCs),due to high optical transparency,good mechanical flexibility,and high thermal stability;however,its acidity and hygroscopicity inevitably hamper the long-term stability of the PSCs and its energy level does not match well with perovskite materials with a relatively low open-circuit voltage.In this work,p-type delafossite CuCrO_(2)nanoparticles synthesized through hydrothermal method was employed as an alternative HTM for triple cation perovskite[(FAPbI_(3))_(0.87)(MAPbBr_(3))_(0.13)]_(0.92)(CsPbI_(3))_(0.08)(possessing better photovoltaic performance and stability than conventional CH3NH3PbI3)based inverted PSCs.The average open-circuit voltage of PSCs increases from 908 mV of the devices with PEDOT:PSS HTM to 1020 m V of the devices with CuCrO_(2)HTM.Ultraviolet photoemission spectroscopy demonstrates the energy band alignment between CuCrO_(2)and perovskite is better than that between PEDOT:PSS and perovskite,the electrochemical impedance spectroscopy indicates CuCrO_(2)-based PSCs exhibit larger recombination resistance and longer charge carrier lifetime than PEDOT:PSS-based PSCs,which contributes to the high VOCof CuCrO_(2)HTM-based PSCs.
基金Project supported by the National Natural Science Foundation of China(Grant No.61501091)the Fundamental Research Funds for the Central Universities of Ministry of Education of China(Grant Nos.ZYGX2014J003 and ZYGX2013J020)
文摘Design and characterization of a G-band（140–220 GHz） terahertz monolithic integrated circuit（TMIC） amplifier in eight-stage common-emitter topology are performed based on the 0.5-μm In Ga As/In P double heterojunction bipolar transistor（DHBT）. An inverted microstrip line is implemented to avoid a parasitic mode between the ground plane and the In P substrate. The on-wafer measurement results show that peak gains are 20 dB at 140 GHz and more than 15-dB gain at 140–190 GHz respectively. The saturation output powers are-2.688 dBm at 210 GHz and-2.88 dBm at 220 GHz,respectively. It is the first report on an amplifier operating at the G-band based on 0.5-μm InP DHBT technology. Compared with the hybrid integrated circuit of vacuum electronic devices, the monolithic integrated circuit has the advantage of reliability and consistency. This TMIC demonstrates the feasibility of the 0.5-μm InGaAs/InP DHBT amplifier in G-band frequencies applications.
文摘A low temperature sol-gel process was used to fabricate zinc-oxide and yttrium-doped zinc oxide layers. These zinc-oxide and yttrium-doped ZnO films were used as electron transport layers in conjunction with P<sub>3</sub>HT and PC<sub>16</sub>BM type solar cells. It was demonstrated that annealing and doping of electron transport layer influenced the overall organic solar cells performance. Anneals of ~ 150?C provided the highest device performance. Compared to the undoped zinc oxide, the device with yttrium doped zinc oxide layers showed improved efficiency by about 30%. Furthermore an equivalent circuit was proposed to understand the connection between the electrical and optical characteristics of the device. Comparisons between the simulated and experimental current-voltage(I-V) curves displayed only a 1.2% variation between the curves. Clearly, our experimental and simulated studies provide new insight on the equivalent circuit models for inverted organic solar cells and further improvement on photovoltaic efficiency.
