Wafer-level mass production of photonic integrated circuits(PIC)has become a technological mainstay in the field of optics and photonics,enabling many novel and disrupting a wide range of existing applications.However...Wafer-level mass production of photonic integrated circuits(PIC)has become a technological mainstay in the field of optics and photonics,enabling many novel and disrupting a wide range of existing applications.However,scalable photonic packaging and system assembly still represents a major challenge that often hinders commercial adoption of PIC-based solutions.Specifically,chip-to-chip and fiber-to-chip connections often rely on so-called active alignment techniques,where the coupling efficiency is continuously measured and optimized during the assembly process.This unavoidably leads to technically complex assembly processes and high cost,thereby eliminating most of the inherent scalability advantages of PIC-based solutions.In this paper,we demonstrate that 3D-printed facet-attached microlenses(FaML)can overcome this problem by opening an attractive path towards highly scalable photonic system assembly,relying entirely on passive assembly techniques based on industry-standard machine vision and/or simple mechanical stops.FaML can be printed with high precision to the facets of optical components using multi-photon lithography,thereby offering the possibility to shape the emitted beams by freely designed refractive or reflective surfaces.Specifically,the emitted beams can be collimated to a comparatively large diameter that is independent of the device-specific mode fields,thereby relaxing both axial and lateral alignment tolerances.Moreover,the FaML concept allows to insert discrete optical elements such as optical isolators into the free-space beam paths between PIC facets.We show the viability and the versatility of the scheme in a series of selected experiments of high technical relevance,comprising pluggable fiber-chip interfaces,the combination of PIC with discrete micro-optical elements such as polarization beam splitters,as well as coupling with ultra-low back-reflection based on non-planar beam paths that only comprise tilted optical surfaces.Based on our results,we believe that the FaML concept opens an 展开更多
GaN-based devices have developed significantly in recent years due to their promising applications and research potential.A major goal is to monolithically integrate various GaN-based components onto a single chip to ...GaN-based devices have developed significantly in recent years due to their promising applications and research potential.A major goal is to monolithically integrate various GaN-based components onto a single chip to create future optoelectronic systems with low power consumption.This miniaturized integration not only enhances multifunctional performance but also reduces material,processing,and packaging costs.In this study,we present an optoelectronic on-chip system fabricated using a top-down approach on a III-nitride-on-silicon wafer.The system includes a near-ultraviolet light source,a monitor,a 180°bent waveguide,an electro-absorption modulator,and a receiver,all integrated without the need for regrowth or post-growth doping.35 Mbit/s optical data communication is demonstrated through light propagation within the system,confirming its potential for compact GaN-based optoelectronic solutions.展开更多
In this work,a monolithic oscillator chip is heterogeneously integrated by a film bulk acoustic resonator(FBAR)and a complementary metal-oxide-semiconductor(CMOS)chip using FlexMEMS technology.In the 3 D-stacked integ...In this work,a monolithic oscillator chip is heterogeneously integrated by a film bulk acoustic resonator(FBAR)and a complementary metal-oxide-semiconductor(CMOS)chip using FlexMEMS technology.In the 3 D-stacked integrated chip,the thin-film FBAR sits directly over the CMOS chip,between which a 4μm-thick SU-8 layer provides a robust adhesion and acoustic reflection cavity.The proposed system-on-chip(SoC)integration features a simple fabrication process,small size,and excellent performance.The oscillator outputs 2.024 GHz oscillations of-13.79 dB m and exhibits phase noises of-63,-120,and-136 dB c/Hz at 1 kHz,100 kHz,and far-from-carrier offset,respectively.FlexMEMS technology guarantees compact and accurate assembly,process compatibility,and high performance,thereby demonstrating its great potential in SoC hetero-integration applications.展开更多
基于0.18μm CMOS工艺,设计了1种带消失调电路的高线性度可变增益放大器,在实现增益d B线性连续可调的前提下,提高了放大器的线性度;同时,设计了1种片上滤波器型消直流失调电路,可实时抑制放大器的输出直流失调电压.后仿结果表明,在3.3 ...基于0.18μm CMOS工艺,设计了1种带消失调电路的高线性度可变增益放大器,在实现增益d B线性连续可调的前提下,提高了放大器的线性度;同时,设计了1种片上滤波器型消直流失调电路,可实时抑制放大器的输出直流失调电压.后仿结果表明,在3.3 V的供电电压下,连续增益动态范围为(-21.5)-21.5 d B,-3 d B带宽为27.5 MHz,在0 d B增益下,输入1 d B压缩点为10.7 d Bm,等效输入直流失调电压标准差为1.831 m V.展开更多
In this work,a hybrid integrated optical transmitter module was designed and fabricated.A proton-exchanged Mach–Zehnder lithium niobate(LiNbO_(3))modulator chip was chosen to enhance the output extinction ratio.A fib...In this work,a hybrid integrated optical transmitter module was designed and fabricated.A proton-exchanged Mach–Zehnder lithium niobate(LiNbO_(3))modulator chip was chosen to enhance the output extinction ratio.A fiber was used to adjust the rotation of the polarization direction caused by the optical isolator.The whole optical path structure,including the laser chip,lens,fiber,and modulator chip,was simulated to achieve high optical output efficiency.After a series of process improvements,a module with an output extinction ratio of 34 dB and a bandwidth of 20.5 GHz(from 2 GHz)was obtained.The optical output efficiency of the whole module reached approximately 21%.The link performance of the module was also measured.展开更多
基金the Deutsche Forschungsgemeinschaft(DFG,German Research Foundation)under Germany’s Excellence Strategy via the Excellence Cluster 3D Matter Made to Order(EXC-2082/1-390761711)the Collaborative Research Center WavePhenomena(CRC 1173)+4 种基金by the Bundesministerium für Bildung und Forschung(BMBF)via the projects PRIMA(#13N14630),DiFeMiS(#16ES0948)which is part of the programme“Forschungslabore Mikroelektronik Deutschland(ForLab),and Open6GHub(#16KISK010)by the European Research Council(ERC Consolidator Grant‘TeraSHAPE’#773248),by the H2020 Photonic Packaging Pilot Line PIXAPP(#731954)by the Alfried Krupp von Bohlen und Halbach Foundation,and by the Karlsruhe School of Optics and Photonics(KSOP).
文摘Wafer-level mass production of photonic integrated circuits(PIC)has become a technological mainstay in the field of optics and photonics,enabling many novel and disrupting a wide range of existing applications.However,scalable photonic packaging and system assembly still represents a major challenge that often hinders commercial adoption of PIC-based solutions.Specifically,chip-to-chip and fiber-to-chip connections often rely on so-called active alignment techniques,where the coupling efficiency is continuously measured and optimized during the assembly process.This unavoidably leads to technically complex assembly processes and high cost,thereby eliminating most of the inherent scalability advantages of PIC-based solutions.In this paper,we demonstrate that 3D-printed facet-attached microlenses(FaML)can overcome this problem by opening an attractive path towards highly scalable photonic system assembly,relying entirely on passive assembly techniques based on industry-standard machine vision and/or simple mechanical stops.FaML can be printed with high precision to the facets of optical components using multi-photon lithography,thereby offering the possibility to shape the emitted beams by freely designed refractive or reflective surfaces.Specifically,the emitted beams can be collimated to a comparatively large diameter that is independent of the device-specific mode fields,thereby relaxing both axial and lateral alignment tolerances.Moreover,the FaML concept allows to insert discrete optical elements such as optical isolators into the free-space beam paths between PIC facets.We show the viability and the versatility of the scheme in a series of selected experiments of high technical relevance,comprising pluggable fiber-chip interfaces,the combination of PIC with discrete micro-optical elements such as polarization beam splitters,as well as coupling with ultra-low back-reflection based on non-planar beam paths that only comprise tilted optical surfaces.Based on our results,we believe that the FaML concept opens an
基金This work was supported in part by the National Natural Science Founda⁃tion of China under Grant No.U21A20495National Key Research and De⁃velopment Program of China under Grant No.2022YFE0112000High⁃er Education Discipline Innovation Project under Grant No.D17018.
文摘GaN-based devices have developed significantly in recent years due to their promising applications and research potential.A major goal is to monolithically integrate various GaN-based components onto a single chip to create future optoelectronic systems with low power consumption.This miniaturized integration not only enhances multifunctional performance but also reduces material,processing,and packaging costs.In this study,we present an optoelectronic on-chip system fabricated using a top-down approach on a III-nitride-on-silicon wafer.The system includes a near-ultraviolet light source,a monitor,a 180°bent waveguide,an electro-absorption modulator,and a receiver,all integrated without the need for regrowth or post-growth doping.35 Mbit/s optical data communication is demonstrated through light propagation within the system,confirming its potential for compact GaN-based optoelectronic solutions.
基金supported by National High Technology Research and Development Program of China(863 Program)under Grant No.2015AA042603the 111 Project under Grant No.B07014Nanchang Institute for Microtechnology of Tianjin University
文摘In this work,a monolithic oscillator chip is heterogeneously integrated by a film bulk acoustic resonator(FBAR)and a complementary metal-oxide-semiconductor(CMOS)chip using FlexMEMS technology.In the 3 D-stacked integrated chip,the thin-film FBAR sits directly over the CMOS chip,between which a 4μm-thick SU-8 layer provides a robust adhesion and acoustic reflection cavity.The proposed system-on-chip(SoC)integration features a simple fabrication process,small size,and excellent performance.The oscillator outputs 2.024 GHz oscillations of-13.79 dB m and exhibits phase noises of-63,-120,and-136 dB c/Hz at 1 kHz,100 kHz,and far-from-carrier offset,respectively.FlexMEMS technology guarantees compact and accurate assembly,process compatibility,and high performance,thereby demonstrating its great potential in SoC hetero-integration applications.
文摘基于0.18μm CMOS工艺,设计了1种带消失调电路的高线性度可变增益放大器,在实现增益d B线性连续可调的前提下,提高了放大器的线性度;同时,设计了1种片上滤波器型消直流失调电路,可实时抑制放大器的输出直流失调电压.后仿结果表明,在3.3 V的供电电压下,连续增益动态范围为(-21.5)-21.5 d B,-3 d B带宽为27.5 MHz,在0 d B增益下,输入1 d B压缩点为10.7 d Bm,等效输入直流失调电压标准差为1.831 m V.
基金This work was supported by National Key Research and Development Program of China(2018YFB2201101)the Strategic Priority Research Program of Chinese Academy of Sciences,Grant No.XDB43000000Beijing Municipal Science&Technology Commission,Administrative Commission of Zhongguancun Science Park No.Z201100004020004。
文摘In this work,a hybrid integrated optical transmitter module was designed and fabricated.A proton-exchanged Mach–Zehnder lithium niobate(LiNbO_(3))modulator chip was chosen to enhance the output extinction ratio.A fiber was used to adjust the rotation of the polarization direction caused by the optical isolator.The whole optical path structure,including the laser chip,lens,fiber,and modulator chip,was simulated to achieve high optical output efficiency.After a series of process improvements,a module with an output extinction ratio of 34 dB and a bandwidth of 20.5 GHz(from 2 GHz)was obtained.The optical output efficiency of the whole module reached approximately 21%.The link performance of the module was also measured.
