The results of X-ray diffraction (XRD) and high resolution electron microscopy (HREM) show that ball milling at room temperature can induce the polytypic transformation of 6H-SiC→3C-SiC. HREM study reveals that a lar...The results of X-ray diffraction (XRD) and high resolution electron microscopy (HREM) show that ball milling at room temperature can induce the polytypic transformation of 6H-SiC→3C-SiC. HREM study reveals that a large number of partial dislocations which play an important role in the transformation can be introduced into SiC crystals during BM by the instant and repeated collisions between balls and powder. The phase transformation follows the route: 6H= (3^+,3^-)→(4^+,2^-)→(5^+, 1^- )→(6^+ ,0^- ).展开更多
Stacking structure and defects in SiGe/P Si infrared detector were studied by using localization high resolution electron microscopy (HREM). The photosensitive region in the detector consists of 3 P + Si 0.65 Ge 0.35 ...Stacking structure and defects in SiGe/P Si infrared detector were studied by using localization high resolution electron microscopy (HREM). The photosensitive region in the detector consists of 3 P + Si 0.65 Ge 0.35 layers and 2 UD Si (undoped Si) layers. The interface between Si 0.65 Ge 0.35 and UD Si is not sharp and has a transition zone with non uniform contrast. The misfit stress of interface is distributed gradiently along the normal direction of the interface. Therefore the crystal defects and serious lattice deformations on the interface have not been found. A defect area with a shape of inverted triangle exists in the edge of photosensitive region. The main types of the defects in the area are stacking faults and microtwins. The stacking faults are on (111), and the thickness of the most microtwins is less than 4 interplanar spacing and the twin plane is (111). The Si 0.65 Ge 0.35 and UD Si layers on amorphous SiO 2 layer consist of polycrystals grown by random nucleation, and are in wave.展开更多
基金Project supported by the National Natural Science Foundation of China (Grant No. 59671031)the Committee of Science and Technology Shenyang
文摘The results of X-ray diffraction (XRD) and high resolution electron microscopy (HREM) show that ball milling at room temperature can induce the polytypic transformation of 6H-SiC→3C-SiC. HREM study reveals that a large number of partial dislocations which play an important role in the transformation can be introduced into SiC crystals during BM by the instant and repeated collisions between balls and powder. The phase transformation follows the route: 6H= (3^+,3^-)→(4^+,2^-)→(5^+, 1^- )→(6^+ ,0^- ).
文摘Stacking structure and defects in SiGe/P Si infrared detector were studied by using localization high resolution electron microscopy (HREM). The photosensitive region in the detector consists of 3 P + Si 0.65 Ge 0.35 layers and 2 UD Si (undoped Si) layers. The interface between Si 0.65 Ge 0.35 and UD Si is not sharp and has a transition zone with non uniform contrast. The misfit stress of interface is distributed gradiently along the normal direction of the interface. Therefore the crystal defects and serious lattice deformations on the interface have not been found. A defect area with a shape of inverted triangle exists in the edge of photosensitive region. The main types of the defects in the area are stacking faults and microtwins. The stacking faults are on (111), and the thickness of the most microtwins is less than 4 interplanar spacing and the twin plane is (111). The Si 0.65 Ge 0.35 and UD Si layers on amorphous SiO 2 layer consist of polycrystals grown by random nucleation, and are in wave.
