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Ball-milling-induced polytypic transformation of 6H-SiC→3C-SiC

Ball-milling-induced polytypic transformation of 6H-SiC→3C-SiC
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摘要 The results of X-ray diffraction (XRD) and high resolution electron microscopy (HREM) show that ball milling at room temperature can induce the polytypic transformation of 6H-SiC→3C-SiC. HREM study reveals that a large number of partial dislocations which play an important role in the transformation can be introduced into SiC crystals during BM by the instant and repeated collisions between balls and powder. The phase transformation follows the route: 6H= (3^+,3^-)→(4^+,2^-)→(5^+, 1^- )→(6^+ ,0^- ). The results of X-ray diffraction (XRD) and high resolution electron microscopy (HREM) show that ball milling at room temperature can induce the polytypic transformation of 6H?SiC→3C?SiC. HREM study reveals that a large number of partial dislocations which play an important role in the transformation can be introduced into SiC crystals during BM by the instant and repeated collisions between balls and powder. The phase transformation follows the route: 6H=(3+, 3?)→(4+, 2?)→(5+, 1?)→(6+, 0?).
出处 《Science China(Technological Sciences)》 SCIE EI CAS 1999年第1期54-59,共6页 中国科学(技术科学英文版)
基金 Project supported by the National Natural Science Foundation of China (Grant No. 59671031) the Committee of Science and Technology Shenyang
关键词 silicon CARBIDE polytypic transformation ball MILLING (BM) high-resolution electron microscopy (H-REM). silicon carbide polytypic transformation ball milling (BM) high-resolution electron microscopy (HREM)
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