An improved method has been developed for enriching and determining trace In,Pt,Sn,Co,Hg,Pb,Ni, Bi,Pd,Cu and Ag in high-purity gallium.Sample was treated by PDM(partial dissolution of matrix)with HCl(11mol/L)-HNO_3(0....An improved method has been developed for enriching and determining trace In,Pt,Sn,Co,Hg,Pb,Ni, Bi,Pd,Cu and Ag in high-purity gallium.Sample was treated by PDM(partial dissolution of matrix)with HCl(11mol/L)-HNO_3(0.5mol/L)to a small residue of which Ga was then removed by extraction with 1 ml isopropyl ether.The concentrated impurities were determined by AES procedure.The recoveries for the ele- ments at the range of 0.02～0.2 μg are 95～103％;the relative standard deviations for determined impurities overa rangeofn.10^(-7)～n·10^(-8)％ are 4.3～12％;the detection limit of most elements can reach n·10^(-7)～ n·10^(-8)％ level with the exception of Hg and Pt.This method has been successfully used to analyze many sam- ples sent by factories and institutes.展开更多
文摘An improved method has been developed for enriching and determining trace In,Pt,Sn,Co,Hg,Pb,Ni, Bi,Pd,Cu and Ag in high-purity gallium.Sample was treated by PDM(partial dissolution of matrix)with HCl(11mol/L)-HNO_3(0.5mol/L)to a small residue of which Ga was then removed by extraction with 1 ml isopropyl ether.The concentrated impurities were determined by AES procedure.The recoveries for the ele- ments at the range of 0.02～0.2 μg are 95～103％;the relative standard deviations for determined impurities overa rangeofn.10^(-7)～n·10^(-8)％ are 4.3～12％;the detection limit of most elements can reach n·10^(-7)～ n·10^(-8)％ level with the exception of Hg and Pt.This method has been successfully used to analyze many sam- ples sent by factories and institutes.
