A 2D model for the potential distribution in silicon film is derived for a symmetrical double gate MOS- FET in weak inversion. This 2D potential distribution model is used to analytically derive an expression for the ...A 2D model for the potential distribution in silicon film is derived for a symmetrical double gate MOS- FET in weak inversion. This 2D potential distribution model is used to analytically derive an expression for the subthreshold slope and threshold voltage. A drain current model for lightly doped symmetrical DG MOSFETs is then presented by considering weak and strong inversion regions including short channel effects, series source to drain resistance and channel length modulation parameters. These derived models are compared with the simulation results of the SILVACO （Atlas） tool for different channel lengths and silicon film thicknesses. Lastly, the effect of the fixed oxide charge on the drain current model has been studied through simulation. It is observed that the obtained analytical models of syrnmetrical double gate MOSFETs are in good agreement with the simulated results for a channel length to silicon film thickness ratio greater than or equal to 2.展开更多
A junctionless transistor is emerging as a most promising device for the future technology in the decananometer regime. To explore and exploit the behavior completely, the understanding of gate tunneling current is of...A junctionless transistor is emerging as a most promising device for the future technology in the decananometer regime. To explore and exploit the behavior completely, the understanding of gate tunneling current is of great importance. In this paper we have explored the gate tunneling current of a double gate junctionless transistor（DGJLT） for the first time through an analytical model, to meet the future requirement of expected high-k gate dielectric material that could replace SiO2. We therefore present the high-k gate stacked architecture of the DGJLT to minimize the gate tunneling current. This paper also demonstrates the impact of conduction band offset,workfunction difference and k-values on the tunneling current of the DGJLT.展开更多
We have analyzed the operating mechanism of the novel deep submicrometer SOI drive-in gate controlled hybrid transistor (DGCHT), which can effectively alleviate the contradiction between speed enhancement and power re...We have analyzed the operating mechanism of the novel deep submicrometer SOI drive-in gate controlled hybrid transistor (DGCHT), which can effectively alleviate the contradiction between speed enhancement and power reduction in conventional MOS devices and can improve the output resistance. On the basis of this, the subthreshold current model of DGCHTs is proposed. The model takes into account the impact of lateral non-uniform doping profile on body effect, short-channel effect and carrier mobility. Considering the mobile charge, two-dimensional Poisson equation is solved with quasi-two-dimensional analysis and parabolic approximation of surface potential. With the surface potential obtained, the subthreshold current is figured out, including both the diffusion and drift component. The calculated results are in good agreement with the MEDICI numerical simulation results, indicating the correct description of the current characteristics of SOI DGCHT by the presented model. The model can also be considered as an important reference to the current simulation of deep submicrometer MOSFET with pocket implantation.展开更多
文摘A 2D model for the potential distribution in silicon film is derived for a symmetrical double gate MOS- FET in weak inversion. This 2D potential distribution model is used to analytically derive an expression for the subthreshold slope and threshold voltage. A drain current model for lightly doped symmetrical DG MOSFETs is then presented by considering weak and strong inversion regions including short channel effects, series source to drain resistance and channel length modulation parameters. These derived models are compared with the simulation results of the SILVACO （Atlas） tool for different channel lengths and silicon film thicknesses. Lastly, the effect of the fixed oxide charge on the drain current model has been studied through simulation. It is observed that the obtained analytical models of syrnmetrical double gate MOSFETs are in good agreement with the simulated results for a channel length to silicon film thickness ratio greater than or equal to 2.
文摘A junctionless transistor is emerging as a most promising device for the future technology in the decananometer regime. To explore and exploit the behavior completely, the understanding of gate tunneling current is of great importance. In this paper we have explored the gate tunneling current of a double gate junctionless transistor（DGJLT） for the first time through an analytical model, to meet the future requirement of expected high-k gate dielectric material that could replace SiO2. We therefore present the high-k gate stacked architecture of the DGJLT to minimize the gate tunneling current. This paper also demonstrates the impact of conduction band offset,workfunction difference and k-values on the tunneling current of the DGJLT.
文摘We have analyzed the operating mechanism of the novel deep submicrometer SOI drive-in gate controlled hybrid transistor (DGCHT), which can effectively alleviate the contradiction between speed enhancement and power reduction in conventional MOS devices and can improve the output resistance. On the basis of this, the subthreshold current model of DGCHTs is proposed. The model takes into account the impact of lateral non-uniform doping profile on body effect, short-channel effect and carrier mobility. Considering the mobile charge, two-dimensional Poisson equation is solved with quasi-two-dimensional analysis and parabolic approximation of surface potential. With the surface potential obtained, the subthreshold current is figured out, including both the diffusion and drift component. The calculated results are in good agreement with the MEDICI numerical simulation results, indicating the correct description of the current characteristics of SOI DGCHT by the presented model. The model can also be considered as an important reference to the current simulation of deep submicrometer MOSFET with pocket implantation.
