摘要
研究了一种建立在退化栅电流物理解析模型基础上的深亚微米pMOS器件HCI(hot carrier injection)退化模型.提出了一种基于LM(Levenberg Marquardt)算法的多目标响应全域优化提取策略,并对可靠性模型参数进行优化提取.分析了优化过程中由于参数灵敏度过低产生的问题并提出采用递归算法求解不同时刻栅电流注入电荷量的加速计算方法.最后,给出了最优化参数提取的结果,并且将测量值与理论值进行了比较,得到很好的一致性.
A hot carrier injection degradation model for a DSM（deep submicron）pMOS device is studied,which is based on the physical model of a degradation gate current. A multi-objectives global optimization extracting method for reliability parameters realized by L-M （Levenberg-Marquardt） algorithms is proposed. The lower parametric sensitivity issues are analyzed and solved. A recursion algorithm for quantities of injected charges is proposed for accelerating the process. Finally,the results of optimal parameters are listed from both the theory and the measurements for comparison.
基金
国家高技术研究发展计划(批准号:2003AA1Z1630)
国家自然科学基金(批准号:60206006)资助项目~~
关键词
HCI
时变栅电流模型
参数提取
HCI
time-dependence gate current model
parameter extraction
