We report on the fabrication and optimization of lithium niobate planar and ridge waveguides at the wavelength of 633 nm.To obtain a planar waveguide, oxygen ions with an energy of 3.0 Me V and a fluence of 1.5 ×...We report on the fabrication and optimization of lithium niobate planar and ridge waveguides at the wavelength of 633 nm.To obtain a planar waveguide, oxygen ions with an energy of 3.0 Me V and a fluence of 1.5 × 10^(15) ions=cm^(2) are implanted in the polished face of Li Nb O_(3) crystals. For planar waveguides, a loss of 0.5 d B/cm is obtained after annealing at 300°C for30 min. The ridge waveguide is fabricated by the diamond blade dicing method on optimized planar waveguides. The guiding properties are investigated by prism coupling and end-face coupling methods.展开更多
Terbium gallium garnet(Tb_(3)Ga_(5)O_(12),TGG)crystal can be used to fabricate various magneto-optical devices due to its optimal Faraday effect.In this work,400-keV He^(+)ions with a fluence of 6.0×10^(16)ions/c...Terbium gallium garnet(Tb_(3)Ga_(5)O_(12),TGG)crystal can be used to fabricate various magneto-optical devices due to its optimal Faraday effect.In this work,400-keV He^(+)ions with a fluence of 6.0×10^(16)ions/cm^(2)are irradiated into the TGG crystal for the planar waveguide formation.The precise diamond blade dicing with a rotation speed of 2×10^(4)rpm and a cutting velocity of 0.1 mm/s is performed on the He^(+)-implanted TGG planar waveguide for the ridge structure.The darkmode spectrum of the He^(+)-implanted TGG planar waveguide is measured by the prism-coupling method,thereby obtaining the relationship between the reflected light intensity and the effective refractive index.The refractive index profile of the planar waveguide is reconstructed by the reflectivity calculation method.The near-field light intensity distribution of the planar waveguide and the ridge waveguide are recorded by the end-face coupling method.The He^(+)-implanted and diamond blade-diced TGG crystal planar and ridge waveguides are promising candidates for integrated magneto-optical devices.展开更多
Dicing of fabricated MEMS （microelectromechanical system） devices is sometimes a source of challenge, especially when devices are overhanging structures. In this work, a modified cleaving technique is developed to p...Dicing of fabricated MEMS （microelectromechanical system） devices is sometimes a source of challenge, especially when devices are overhanging structures. In this work, a modified cleaving technique is developed to precisely separate fabricated devices from a silicon substrate without requiring a dicing machine. This technique is based on DRIE （deep reactive ion etching） which is regularly used to make cleaving trenches in the substrate during the releasing stage. Other similar techniques require some extra later steps or in some cases a long HF soak. To mask the etching process, a thick photoresist is used. It is shown that by applying different UV （ultraviolate） exposure and developing times for the photoresist, the DRIE process could be controlled to etch specific cleaving trenches with less depth than other patterns on the photoresist. Those cleaving trenches are used to cleave the wafer later, while the whole wafer remains as one piece until the end of the silicon etching despite some features being etched all the way through the wafer at the same time. The other steps of fabricating and releasing the devices are unaffected. The process flow is described in details and some results of applying this technique for cleaving fabricated cantilevers on a silicon substrate are presented.展开更多
基金supported by the National Natural Science Foundation of China(Nos.11874243 and 11805142)the Natural Science Foundation of Shandong Province(No.ZR2017MA052)。
文摘We report on the fabrication and optimization of lithium niobate planar and ridge waveguides at the wavelength of 633 nm.To obtain a planar waveguide, oxygen ions with an energy of 3.0 Me V and a fluence of 1.5 × 10^(15) ions=cm^(2) are implanted in the polished face of Li Nb O_(3) crystals. For planar waveguides, a loss of 0.5 d B/cm is obtained after annealing at 300°C for30 min. The ridge waveguide is fabricated by the diamond blade dicing method on optimized planar waveguides. The guiding properties are investigated by prism coupling and end-face coupling methods.
基金Project supported by the Postgraduate Research and Practice Innovation Program of Jiangsu Province,China(Grant No.SJCX210274)the National Natural Science Foundation of China(Grant Nos.11405041 and 61905119)+1 种基金the Scientific Research Foundation for Youths Supported by Jiangxi Province Science Foundation,China(Grant No.20192BAB217015)the University Natural Science Research Project of Jiangsu Province,China(Grant No.19KJB140013)。
文摘Terbium gallium garnet(Tb_(3)Ga_(5)O_(12),TGG)crystal can be used to fabricate various magneto-optical devices due to its optimal Faraday effect.In this work,400-keV He^(+)ions with a fluence of 6.0×10^(16)ions/cm^(2)are irradiated into the TGG crystal for the planar waveguide formation.The precise diamond blade dicing with a rotation speed of 2×10^(4)rpm and a cutting velocity of 0.1 mm/s is performed on the He^(+)-implanted TGG planar waveguide for the ridge structure.The darkmode spectrum of the He^(+)-implanted TGG planar waveguide is measured by the prism-coupling method,thereby obtaining the relationship between the reflected light intensity and the effective refractive index.The refractive index profile of the planar waveguide is reconstructed by the reflectivity calculation method.The near-field light intensity distribution of the planar waveguide and the ridge waveguide are recorded by the end-face coupling method.The He^(+)-implanted and diamond blade-diced TGG crystal planar and ridge waveguides are promising candidates for integrated magneto-optical devices.
文摘Dicing of fabricated MEMS （microelectromechanical system） devices is sometimes a source of challenge, especially when devices are overhanging structures. In this work, a modified cleaving technique is developed to precisely separate fabricated devices from a silicon substrate without requiring a dicing machine. This technique is based on DRIE （deep reactive ion etching） which is regularly used to make cleaving trenches in the substrate during the releasing stage. Other similar techniques require some extra later steps or in some cases a long HF soak. To mask the etching process, a thick photoresist is used. It is shown that by applying different UV （ultraviolate） exposure and developing times for the photoresist, the DRIE process could be controlled to etch specific cleaving trenches with less depth than other patterns on the photoresist. Those cleaving trenches are used to cleave the wafer later, while the whole wafer remains as one piece until the end of the silicon etching despite some features being etched all the way through the wafer at the same time. The other steps of fabricating and releasing the devices are unaffected. The process flow is described in details and some results of applying this technique for cleaving fabricated cantilevers on a silicon substrate are presented.
